Microsemi JAN2N6802 N-channel mosfet qualified per mil-prf-19500/557 Datasheet

2N6796, 2N6798, 2N6800, 2N6802
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
N-CHANNEL MOSFET
Available on
commercial
versions
Qualified per MIL-PRF-19500/557
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These
devices are also available in a low profile U-18 LCC surface mount package. Microsemi also
offers numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series.
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualification is available on 2N6798 only.
(See part nomenclature for all available options.)
•
TO-205AF (TO-39)
Package
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
•
•
Also available in:
Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
Military and other high-reliability applications.
U-18 LCC package
(surface mount)
2N6796U, 2N6798U,
2N6800U & 2N6802U
MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T A = +25 °C
(1)
@ T C = +25 °C
Drain-Source Voltage, dc
2N6796
2N6798
2N6800
2N6802
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T C = +25 ºC
2N6796
2N6798
2N6800
2N6802
(2)
Drain Current, dc @ T C = +100 ºC
2N6796
2N6798
2N6800
2N6802
(3)
Off-State Current (Peak Total Value)
2N6796
2N6798
2N6800
2N6802
Source Current
2N6796
2N6798
2N6800
2N6802
Symbol
Value
T J & T stg
R ӨJC
-55 to +150
5.0
0.8
25
100
200
400
500
± 20
8.0
5.5
3.0
2.5
5.0
3.5
2.0
1.5
32
22
14
11
8.0
5.5
3.0
2.5
PT
V DS
V GS
I D1
I D2
I DM
IS
Unit
o
°C
C/W
W
V
V
A
A
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
A
Website:
www.microsemi.com
See notes on next page.
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 1 of 9
2N6796, 2N6798, 2N6800, 2N6802
Notes: 1. Derate linearly 0.2 W/°C for T C > +25 °C.
2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to
pin diameter.
3. I DM = 4 x I D1 as calculated in note 2.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N6796
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
(see Electrical Characteristics
table)
Symbol
di/dt
IF
RG
V DD
V DS
V GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 2 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
2N6796
2N6798
2N6800
2N6802
V GS = 0 V, I D = 1.0 mA
Gate-Source Voltage (Threshold)
V DS ≥ V GS , I D = 0.25 mA
V DS ≥ V GS , I D = 0.25 mA, T J = +125°C
V DS ≥ V GS , I D = 0.25 mA, T J = -55°C
Gate Current
V GS = ± 20 V, V DS = 0 V
V GS = ± 20 V, V DS = 0 V, T J = +125°C
Symbol
Min.
V (BR)DSS
100
200
400
500
V GS(th)1
V GS(th)2
V GS(th)3
2.0
1.0
Max.
Unit
V
4.0
V
5.0
I GSS1
I GSS2
±100
±200
nA
Drain Current
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
= 80 V
= 160 V
= 320 V
= 400 V
2N6796
2N6798
2N6800
2N6802
I DSS1
25
µA
Drain Current
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
= 80 V, T J = +125 °C
= 160 V, T J = +125 °C
= 320 V, T J = +125 °C
= 400 V, T J = +125 °C
2N6796
2N6798
2N6800
2N6802
I DSS2
0.25
mA
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 5.0 A pulsed
V GS = 10 V, I D = 3.5 A pulsed
V GS = 10 V, I D = 2.0 A pulsed
V GS = 10 V, I D = 1.5 A pulsed
2N6796
2N6798
2N6800
2N6802
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 8.0 A pulsed
V GS = 10 V, I D = 5.5 A pulsed
V GS = 10 V, I D = 3.0 A pulsed
V GS = 10 V, I D = 2.5 A pulsed
2N6796
2N6798
2N6800
2N6802
Static Drain-Source On-State Resistance
T J = +125°C
V GS = 10 V, I D = 5.0 A pulsed
V GS = 10 V, I D = 3.5 A pulsed
V GS = 10 V, I D = 2.0 A pulsed
V GS = 10 V, I D = 1.5 A pulsed
2N6796
2N6798
2N6800
2N6802
Diode Forward Voltage
V GS = 0 V, I D = 8.0 A pulsed
V GS = 0 V, I D = 5.5 A pulsed
V GS = 0 V, I D = 3.0 A pulsed
V GS = 0 V, I D = 2.5 A pulsed
2N6796
2N6798
2N6800
2N6802
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
r DS(on)1
r DS(on)2
r DS(on)3
V SD
0.18
0.40
1.00
1.50
0.195
0.420
1.100
1.600
0.35
0.75
2.40
3.50
1.5
1.4
1.4
1.4
Ω
Ω
Ω
V
Page 3 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V GS = 10 V, I D = 8.0 A, V DS = 50 V
V GS = 10 V, I D = 5.5 A, V DS = 50 V
V GS = 10 V, I D = 3.0 A, V DS = 50 V
V GS = 10 V, I D = 2.5 A, V DS = 50 V
Symbol
2N6796
2N6798
2N6800
2N6802
Gate to Source Charge
V GS = 10 V, I D = 8.0 A, V DS
V GS = 10 V, I D = 5.5 A, V DS
V GS = 10 V, I D = 3.0 A, V DS
V GS = 10 V, I D = 2.5 A, V DS
= 50 V
= 50 V
= 50 V
= 50 V
2N6796
2N6798
2N6800
2N6802
Gate to Drain Charge
V GS = 10 V, I D = 8.0 A, V DS
V GS = 10 V, I D = 5.5 A, V DS
V GS = 10 V, I D = 3.0 A, V DS
V GS = 10 V, I D = 2.5 A, V DS
= 50 V
= 50 V
= 50 V
= 50 V
2N6796
2N6798
2N6800
2N6802
Min.
Max.
Unit
Q g(on)
28.51
42.07
34.75
33.00
nC
Q gs
6.34
5.29
5.75
4.46
nC
Q gd
16.59
28.11
16.59
28.11
nC
Max.
Unit
t d(on)
30
ns
tr
75
50
35
30
ns
t d(off)
40
50
55
55
ns
tf
45
40
35
30
ns
t rr
300
500
700
900
ns
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Turn-on delay time
I D = 8.0 A, V GS = +10 V, R G
I D = 5.5 A, V GS = +10 V, R G
I D = 3.0 A, V GS = +10 V, R G
I D = 2.5 A, V GS = +10 V, R G
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796
2N6798
2N6800
2N6802
Rinse time
I D = 8.0 A, V GS
I D = 5.5 A, V GS
I D = 3.0 A, V GS
I D = 2.5 A, V GS
= +10 V, R G
= +10 V, R G
= +10 V, R G
= +10 V, R G
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796
2N6798
2N6800
2N6802
Turn-off delay time
I D = 8.0 A, V GS = +10 V, R G
I D = 5.5 A, V GS = +10 V, R G
I D = 3.0 A, V GS = +10 V, R G
I D = 2.5 A, V GS = +10 V, R G
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796
2N6798
2N6800
2N6802
Fall time
I D = 8.0 A, V GS
I D = 5.5 A, V GS
I D = 3.0 A, V GS
I D = 2.5 A, V GS
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 7.5 Ω, V DD
= 30 V
= 77 V
= 176 V
= 225 V
2N6796
2N6798
2N6800
2N6802
= +10 V, R G
= +10 V, R G
= +10 V, R G
= +10 V, R G
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F
T4-LDS-0047, Rev. 3 (121483)
= 8.0 A
= 5.5 A
= 3.0 A
= 2.5 A
2N6796
2N6798
2N6800
2N6802
©2012 Microsemi Corporation
Min.
Page 4 of 9
2N6796, 2N6798, 2N6800, 2N6802
THERMAL RESPONSE (ZӨJC)
GRAPHS
t 1 , RECTANGLE PULSE DURATION (seconds)
FIGURE 1 – Normalized Transient Thermal Impedance
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 5 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS (continued)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
FIGURE 2 – Maximum Drain Current versus Case Temperature Graphs
T C , CASE TEMPERATURE (°C)
For 2N6798
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
T C , CASE TEMPERATURE (°C)
For 2N6796
T C , CASE TEMPERATURE (°C)
2N6800
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
T C , CASE TEMPERATURE (°C)
2N6802
Page 6 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area
ID, DRAIN CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6796
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6798
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 7 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area (continued)
ID, DRAIN-TO-SOURCE- CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6880
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6802
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 8 of 9
2N6796, 2N6798, 2N6800, 2N6802
PACKAGE DIMENSIONS
Dimensions
Millimeters
Max
Min
Max
0.355
7.75
9.02
Inch
Symbol
CD
Min
0.305
CH
0.160
.180
4.07
4.57
HD
0.335
0.370
8.51
9.39
LC
0.200 TP
5.08 TP
Note
6
LD
0.016
0.021
0.41
0.53
7, 8
LL
0.500
0.750
12.70
19.05
7, 8
LU
0.016
0.019
0.41
0.48
7, 8
1.27
7, 8
L1
0.050
L2
0.250
P
.070
Q
6.35
7, 8
1.78
0.050
5
1.27
4
3
2
TL
TW
0.029
0.028
0.045
0.034
0.74
0.72
1.14
0.86
TH
.009
.041
0.23
1.04
r
α
0.010
45° TP
0.25
45° TP
9
6
NOTES:
1.
2.
3.
4.
5.
6.
Dimensions are in inches. Millimeters are given for general information only.
Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
Dimension TL measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius
of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 9 of 9
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