ON EMD4DXV6T1G Dual bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network Datasheet

EMD4DXV6T1,
EMD4DXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
(3)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD4DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
(2)
R1
R2
Q1
Q2
R2
R1
(4)
(5)
Features
•
•
•
•
(1)
(6)
6
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
1
SOT−563
CASE 463A
STYLE 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
MARKING DIAGRAM
1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD
357
2.9
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
350
°C/W
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage Temperature
October, 2005− Rev. 1
U7 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
PD
500
4.0
mW
mW/°C
RqJA
250
°C/W
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 board with minimum mounting pad.
© Semiconductor Components Industries, LLC, 2005
U7 M G
G
1
Package
Shipping †
EMD4DXV6T1G
SOT−563
(Pb−Free)
4000/Tape & Reel
EMD4DXV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
EMD4DXV6/D
EMD4DXV6T1, EMD4DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA)
IEBO
−
−
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
80
140
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Characteristic
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VOH
4.9
−
−
Vdc
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.17
0.21
0.25
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA)
IEBO
−
−
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
hFE
80
140
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
2
150
EMD4DXV6T1, EMD4DXV6T5
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6T1 PNP TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
1
2
4
6
Figure 2. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0
10
8
10
Figure 5. Output Current versus Input Voltage
10
0.1
25°C
−25°C
1
50
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 3. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
http://onsemi.com
3
EMD4DXV6T1, EMD4DXV6T5
10
IC/IB = 10
TA = −25°C
75°C
25°C
1
0.1
0.01
0
20
40
60
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6T1 NPN TRANSISTOR
TA = 75°C
25°C
−25°C
100
10
1
100
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
100
0.8
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
0.6
0.4
0.2
0
10
20
30
25°C
10
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
50
40
75°C
0
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current vs. Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
1
0
1000
TA = −25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
4
50
10
EMD4DXV6T1, EMD4DXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
2
L
4
E
−Y−
3
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
HE
DIM
A
b
C
D
E
e
L
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
5
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
EMD4DXV6/D
Similar pages