IXYS IXFE48N50QD2 Buck & boost configurations for pfc & motor control circuit Datasheet

HiPerFETTM
Power MOSFETs
VDSS
IXFE44N50QD2 IXFE44N50QD3 500 V
IXFE48N50QD2 IXFE48N50QD3 500 V
Buck & Boost Configurations for
PFC & Motor Control Circuits
ID (cont)
RDS(on)
trr
0.12 Ω 35 ns
0.11 Ω 35 ns
39 A
41A
3
3
4
2
2
4
D2
HiPerFET MOSFET
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
44N50Q
48N50Q
39
41
A
A
IDM
TC = 25°C,
pulse width limited by max. TJM
44N50Q
48N50Q
176
192
A
A
IAR
TC = 25°C
48
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, -di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150°C, RG = 2 Ω
15
V/ns
PD
TC = 25°C
400
W
600
V
60
A
DIODE
VRRM
IFAVM
TC = 70°C; rectangular, d = 0.5
IFRM
tp <10 µs; pulse width limited by TJ
800
A
PD
TC = 25°C
180
W
-40 ... +150
150
-40 ... +150
°C
°C
°C
2500
3000
V~
V~
TJ
TJM
Tstg
CASE
D3
1
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque (M4)
Weight
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
1
ISOPLUS 227TM(IXFE)
1
2
3
2 = Gate
1 = Source
4
3 = Drain
4 = Anode/Cathode
Features
• Popular Buck & Boost circuit
topologies
• Conforms to SOT-227B outline
• Isolation voltage 3000 V~
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
(<60 pF)
- reduced RFI
• Ultra-fast FRED diode with soft
reverse recovery
Applications
• Power factor controls and buck
regulators
• DC servo and robotic drives
• DC choppers
• Switch reluctance motor controls
Advantages
• Easy to mount with 2 screws
• Space savings
• Tightly coupled FRED
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2004 IXYS All rights reserved
DS98903C(03/04)
IXFE44N50QD2
IXFE44N50QD3
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
V GS = 0 V, ID = 1 mA
V DS = VGS, ID = 4 mA
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = IT
Symbol
Test Conditions
gfs
VDS = 10 V, ID = IT, pulse test
500
2
4
V
V
±100
nA
TJ = 25°C
TJ = 125°C
100
2
µA
mA
44N50Q
48N50Q
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
0.12
0.11
Ω
Ω
30
36
S
8000
930
220
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
V GS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1Ω (External)
33
22
75
10
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
V GS = 10 V, VDS = 0.5 VDSS, ID = IT
190
40
86
nC
nC
nC
RthJC
0.31
RthCK
0.07
Ultra-fast Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Test Conditions
IR
TJ= 25°C; VR= VRRM
TJ= 150°C; VR= 0.8VRRM
200
2.5
µA
mA
VF
IF = 60A, VGS = 0 V
2.05
V
1.4
V
50
ns
8.3
A
Note1
ISOPLUS-227 B
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Ciss
Coss
C rss
Symbol
IXFE48N50QD2
IXFE48N50QD3
TJ = 150°C
t rr
II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C
35
IRM
IF= 60A, di/dt = -100 A/µs, VR = 100 V, TJ = 100°C
RthJC
RthJK
0.05
Please note:
For characteristic curves please see
IXFK48N50Q
0.7 K/W
K/W
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IXFE44N50 IT = 22A
IXFE48N50 IT = 24A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
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