ON MSD42SWT1G Npn silicon general purpose high voltage transistor Datasheet

MSD42SWT1G
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
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COLLECTOR
3
Features
 These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C)
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
300
Vdc
Collector-Emitter Voltage
V(BR)CEO
300
Vdc
Emitter-Base Voltage
V(BR)EBO
6.0
Vdc
Rating
Collector Current -- Continuous
IC
150
mAdc
1
BASE
2
EMITTER
3
1
2
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Power Dissipation (Note 1)
Rating
PD
150
mW
Junction Temperature
TJ
150
C
Tstg
-- 55 to +150
C
Storage Temperature Range
SC-- 70 (SOT-- 323)
CASE 419
STYLE 3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
D4 M G
G
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
--
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
--
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
V(BR)EBO
6.0
--
Vdc
Collector-Base Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
--
0.1
mA
Emitter--Base Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
IEBO
--
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
Collector-Emitter Saturation Voltage
(Note 2) (IC = 200 mAdc,
IB = 2.0 mAdc)
hFE1
hFE2
25
40
200
--
VCE(sat)
--
0.5
1
D4 = Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
--
MSD42SWT1G SC--70/SOT--323 3000/Tape & Reel
(Pb--Free)
Vdc
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width  300 ms, D.C.  2%.
 Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 2
1
Publication Order Number:
MSD42SWT1/D
MSD42SWT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MSD425WT1/D
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