Fairchild FJI5603D Npn silicon transistor Datasheet

FJI5603D
NPN Silicon Transistor
Applications
Equivalent Circuit
• High Voltage and High Speed Power Switch Application
• Electronic Ballast Application
C
Features
B
• Wide Safe Operating Area
• Small Variance in Storage Time
• Built-in Free Wheeling Diode
I2-PAK
1
E
1.Base
Absolute Maximum Ratings*
Symbol
2.Collector
3.Emitter
Ta = 25°C unless otherwise noted
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
1600
V
BVCEO
Collector-Emitter Voltage
800
V
BVEBO
Emitter-Base Voltage
12
V
IC
Collector Current(DC)
3
A
ICP
Collector Current(Pulse)**
6
A
IB
Base Current
2
A
IBP
Base Current(Pulse)**
4
A
PD
Power Dissipation(TC=25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Junction Temperature Range
- 65 ~ +150
°C
EAS
Avalanche Energy(Tj=25°C, 8mH)
3.5
mJ
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10%
Thermal Characteristics*
Ta=25°C unless otherwise noted
Symbol
Parameter
Rθjc
Thermal Resistance, Junction to Case
Rθja
Thermal Resistance, Junction to Ambient
Ratings
Units
1.25
°C/W
80
°C/W
* Device mounted on minimum pad size
Ordering Information
Part Number
Marking
Package
Packing Method
FJI5603DTU
J5603D
I2PAK
TUBE
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
Remarks
www.fairchildsemi.com
1
FJI5603D — NPN Silicon Transistor
June 2008
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=0.5mA, IE=0
1600
1689
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
800
870
V
BVEBO
Emitter-Base Breakdown Voltage
IE=0.5mA, IC=0
12
14.8
V
ICES
Collector Cut-off Current
VCES=1600V,
IE=0
TC=25°C
VCE=800V,
VBE=0
TC=25°C
ICEO
Collector Cut-off Current
TC=125°C
Emitter Cut-off Current
VEB=12V, IC=0
hFE
DC Current Gain
VCE=3V,
IC=0.4A
TC=25°C
VCE=10V, IC=5mA
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
µA
1000
0.01
TC=125°C
IEBO
VCE(sat)
0.01
100
µA
1000
0.05
500
20
29
35
TC=125°C
6
15
TC=25°C
20
43
TC=125°C
20
46
µA
IC=250mA, IB=25mA TC=25°C
0.5
1.25
V
IC=500mA, IB=50mA TC=25°C
1.5
2.5
V
IC=1A, IB=0.2A
TC=25°C
1.2
2.5
V
IC=500mA, IB=50mA TC=25°C
0.74
1.2
V
TC=125°C
0.61
1.1
TC=25°C
0.85
1.2
TC=125°C
0.74
1.1
IC=2A, IB=0.4A
V
Cib
Input Capacitance
VEB=10V, IC=0, f=1MHz
745
1000
pF
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
56
500
pF
fT
Current Gain Bandwidth Product
IC=0.1A,VCE=10V
5
VF
Diode Forward Voltage
IF=0.4A
0.76
1.2
V
IF=1A
0.83
1.5
V
MHz
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤10%
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
2
FJI5603D — NPN Silicon Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min
Typ.
Max.
Units
400
600
ns
2.1
2.3
µs
310
1000
ns
600
1100
ns
1.3
1.5
µs
180
350
ns
-
1.2
µs
170
250
ns
180
250
ns
-
1.2
µs
140
175
ns
170
200
ns
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs)
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
IC=0.3A, IB1=50mA IB2=150mA
VCC=125V
RL = 416Ω
1.9
IC=0.5A, IB1=50mA, IB2=250mA
VCC=125V, RL = 250Ω
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=0.3A, IB1=50mAIB2=150mA,
Vz=300V, LC=200H
IC=0.5A, IB1=50mA, IB2=250mA,
Vz=300V, LC=200H
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
0.8
0.8
www.fairchildsemi.com
3
FJI5603D — NPN Silicon Transistor
Electrical Characteristics TC=25°C unless otherwise noted
3
VCE=10V
2
100
o
TJ=125 C
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
200mA
IB=100mA
1
o
TJ=25 C
10
1
0
0
1
2
3
4
5
6
1
7
Figure 1. Static Characteristic
1000
IC=5IB
VBE[V], VOLTAGE
VCE(sat)(V), VOLTAGE
100
Figure 2. DC current Gain
IC=5IB
10
10
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR EMITTER VOLTAGE
1
o
TJ=125 C
1
o
TJ=25 C
o
TJ=125 C
0.1
o
TJ=25 C
0.01
0.1
1
10
100
1000
1
IC(mA), COLLECTOR CURRENT
10
100
1k
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
2
o
TJ=25 C
1000
F=1MHz
Cib
2.0A
CAPACITANCE[pF]
VCE[V], VOLTAGE
3.0A
1.0A
1
0.4A
IC=0.2A
100
Cob
10
0
1
10
100
1k
1
1
IB[mA], BASE CURRENT
100
Figure 6. Capacitance
Figure 5. Typical Collector Saturation Voltage
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
10
REVERSE VOLTAGE[V]
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4
FJI5603D — NPN Silicon Transistor
Typical Characteristics
FJI5603D — NPN Silicon Transistor
Typical Characteristics (Continued)
5
1000
900
800
700
600
4.5
IC=6IB1=2IB2
VCC=125V
PW=20us
500
3
tOFF(us),TIME
tON[ns],TIME
IC=6IB1=2IB2
VCC=125V
PW=20us
4
3.5
400
o
TJ=125 C
300
o
2.5
TJ=125 C
2
200
o
100
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
o
1.5
TJ=25 C
2
TJ=25 C
1
0.3
3
0.4
Figure 7. Resistive Switching Time, ton
8
IC=10IB1=5IB2
VCC=125V
PW=20us
3
IC=10IB1=5IB2
VCC=125V
PW=20us
7
6
o
TJ=125 C
5
tOFF(us),TIME
600
tON[ns],TIME
2
10
9
900
700
0.6 0.7 0.8 0.9 1
Figure 8. Resistive Switching Time, toff
1000
800
0.5
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
500
400
4
o
TJ=125 C
3
2
o
TJ=25 C
300
200
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
o
TJ=25 C
2
1
0.3
3
Figure 9. Resistive Switching Time, ton
0.5
0.6 0.7 0.8 0.9 1
2
3
Figure 10. Resistive Switching Time, toff
6
4
3
0.4
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
IC=6IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
5
4
IC=10IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
tSTG(us),TIME
tSTG(us),TIME
o
TJ=125 C
2
3
o
TJ=25 C
2
o
TJ=25 C
1
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
1
0.3
3
IC[A], COLLECTOR CURRENT
0.5
0.6
0.7 0.8 0.9 1
2
IC[A], COLLECTOR CURRENT
Figure 11. Inductive Switching Time, tSTG
Figure 12. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
0.4
www.fairchildsemi.com
5
FJI5603D — NPN Silicon Transistor
Typical Characteristics (Continued)
400
800
700
IC=6IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
300
200
IC=10IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
600
500
o
TJ=25 C
400
tF(ns),TIME
tF(ns),TIME
300
100
90
80
70
60
o
o
TJ=25 C
200
TJ=125 C
50
100
90
80
40
30
o
TJ=125 C
70
60
20
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
50
0.3
3
IC[A], COLLECTOR CURRENT
0.5
0.6
0.7 0.8 0.9 1
2
IC[A], COLLECTOR CURRENT
Figure 13. Inductive Switching Time, tF
Figure 14. Inductive Switching Time, tF
2000
500
IC=6IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
400
1000
900
800
700
tC[ns],TIME
300
tC[ns],TIME
0.4
o
TJ=25 C
200
IC=10IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
o
TJ=125 C
600
500
400
300
o
o
TJ=125 C
100
0.3
0.4
0.5
TJ=25 C
200
0.6 0.7 0.8 0.9 1
2
100
0.3
3
IC[A], COLLECTOR CURRENT
0.4
0.5
0.6
0.7 0.8 0.9 1
2
IC[A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tc
Figure 16. Inductive Switching Time, tc
PC[W], POWER DISSIPATION
100
50
0
0
50
100
150
200
o
TC( C), CASE TEMPERATURE
Figure 17. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
6
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Full Production
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Obsolete
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
www.fairchildsemi.com
7
FJI5603D NPN Silicon Transistor
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