Panasonic MA3X075E Silicon epitaxial planar type for band switching Datasheet

Band Switching Diodes
MA3X075D, MA3X075E (MA75WA, MA75WK)
Silicon epitaxial planar type
Unit: mm
0.40+0.10
–0.05
For band switching
0.16+0.10
–0.06
0.4±0.2
2
1
(0.95) (0.95)
1.9±0.1
(0.65)
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacity CD
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
5˚
■ Features
2.8+0.2
–0.3
1.50+0.25
–0.05
3
2.90+0.20
–0.05
Forward current (DC)
Symbol
Rating
Unit
VR
35
V
IF
100
mA
Operating ambient temperature *
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: Maximum ambient temperature during operation
0 to 0.1
Parameter
Reverse voltage (DC)
1.1+0.2
–0.1
■ Absolute Maximum Ratings Ta = 25°C
1.1+0.3
–0.1
10˚
MA3X075D MA3X075E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol
• MA3X075D: M1X • MA3X075E: M1Y
Internal Connection
3
1
D
3
2
1
E
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 33 V
0.01
100
nA
Forward voltage (DC)
VF
IF = 100 mA
0.92
1.0
V
Diode capacitance
CD
VR = 6 V, f = 1 MHz
0.9
1.2
pF
IF = 2 mA, f = 100 MHz
0.65
0.85
Ω
Forward dynamic resistance *
rf
Note) 1. Each characteristic is a standard for individual diode
2. Rated input/output frequency: 100 MHz
3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002
SKG00016AED
1
MA3X075D, MA3X075E
I F  VF
103
CD  VR
IR  T a
102
10
Ta = 25°C
VR = 33 V
10
1
3
Reverse current IR (nA)
Diode capacitance CD (pF)
Forward current IF (mA)
5
102
2
1
0.5
0.3
10
1
10−1
0.2
10−1
0.1
0
0.2
0.4
0.6
0.8
0
1.0
4
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
Forward voltage VF (V)
rf  I F
0.8
0.6
0.4
0.2
0
1
3
10
30
Forward current IF (mA)
2
100
IF = 2 mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
10
30
100
300
Frequency f (MHz)
SKG00016AED
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
rf  f
1.0
f = 100 MHz
Ta = 25°C
Forward dynamic resistance rf (Ω)
Forward dynamic resistance rf (Ω)
1.0
10−2
1 000
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2001 MAR
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