Fairchild FDMC86570L N-channel shielded gate powertrench mosfet 60 v, 56 a, 4.3 m Datasheet

FDMC86570L
N-Channel Shielded Gate PowerTrench® MOSFET
60 V, 56 A, 4.3 mΩ
Features
„ Shielded Gate MOSFET Technology
General Description
„ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
„ Termination is Lead-free
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
„ RoHS Compliant
Application
„ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
„ High performance technology for extremely low rDS(on)
„ DC-DC Conversion
Pin 1
Pin 1
S
D
D
D
Top
S
S
S
D
S
D
S
D
G
D
G
D
Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Ratings
60
Units
V
±20
V
56
(Note 1a)
18
(Note 4)
200
(Note 3)
253
54
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
2.3
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC86570L
Device
FDMC86570L
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
Package
Power33
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
60
V
30
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-7
VGS = 10 V, ID = 18 A
3.1
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 15 A
4.7
6.5
VGS = 10 V, ID = 18 A, TJ = 125 °C
5.0
6.9
VDD = 5 V, ID = 18 A
75
gFS
Forward Transconductance
1.0
1.8
mV/°C
4.3
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
0.1
4790
6705
pF
821
1150
pF
19
30
pF
0.9
2.7
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VDD = 30 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
19
34
ns
6.2
12
ns
38
61
ns
3.9
10
ns
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
63
88
Qg(TOT)
Total Gate Charge
29
41
Qgs
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 18 A
Qgd
Gate to Drain “Miller” Charge
nC
14
nC
6.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 18 A
(Note 2)
0.8
1.3
VGS = 0 V, IS = 1.9 A
(Note 2)
0.7
1.2
V
43
69
ns
26
42
nC
IF = 18 A, di/dt = 100 A/μs
V
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 253 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 13 A, VDD = 60 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 43 A.
4. Pulsed Id limited by junction temperature, td<=100μS, please refer to SOA curve for more details.
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
2
www.fairchildsemi.com
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
200
VGS = 6 V
ID, DRAIN CURRENT (A)
160
VGS = 5 V
120
VGS = 4.5 V
80
VGS = 4 V
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
0
0
1
2
3
4
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
5
VGS = 3.5 V
4
VGS = 4 V
3
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
120
160
200
20
ID = 18 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
16
8
4
TJ = 25 oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
120
TJ = 150 oC
oC
40
TJ = -55 oC
2
3
4
2
4
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
160
TJ = 25
TJ = 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
ID = 18 A
12
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
200
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
-50
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
0
VGS = 6 V VGS = 10 V
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
0
VGS = 5 V
VGS = 4.5 V
200
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
3
1.2
www.fairchildsemi.com
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 18 A
Ciss
VDD = 20 V
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 30 V
6
VDD = 40 V
4
1000
Coss
100
Crss
10
2
f = 1 MHz
VGS = 0 V
0
0
14
28
42
56
1
0.1
70
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
100
50
o
TJ = 100
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RθJC = 2.3 C/W
TJ = 25 oC
oC
10
TJ = 125
1
0.001
0.01
0.1
oC
1
10
80
60
VGS = 10 V
40
20
0
25
100 400
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
100
10000
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
100 μs
10
1 ms
10 ms
100 ms
1s
10 s
DC
1
0.01
75
o
tAV, TIME IN AVALANCHE (ms)
0.1
VGS = 4.5 V
Limited by Package
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
o
TA = 25 C
0.001
0.01
0.1
CURVE BENT TO
MEASURED DATA
1
10
100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
100
10
SINGLE PULSE
RθJA = 125 oC/W
1
TA = 25 oC
0.1 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
1000
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.001
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
100
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
5
www.fairchildsemi.com
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
6
www.fairchildsemi.com
tm
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. C
7
www.fairchildsemi.com
FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
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