ON NTHS4101PT1G Power mosfet -20 v, 6.7 a, p-channel chipfet-tm Datasheet

NTHS4101P
Power MOSFET
−20 V, 6.7 A, P−Channel ChipFET
Features
• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
•
•
•
•
•
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb−Free Package is Available
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V(BR)DSS
RDS(on) TYP
ID MAX
21 m @ −4.5 V
−20 V
−6.7 A
30 m @ −2.5 V
42 m @ −1.8 V
S
G
Applications
• Optimized for Battery and Load Management Applications in
•
•
D
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
Charge Control in Battery Chargers
Buck and Boost Converters
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Value
Unit
Drain−to−Source Voltage
VDSS
−20
Vdc
Gate−to−Source Voltage − Continuous
VGS
8.0
Vdc
Drain Current − Continuous
− 5 seconds
ID
ID
−4.8
−6.7
A
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C
PD
Continuous Source Current
Is
−4.8
RJA
RJA
50
95
TL
260
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
October, 2004 − Rev. 1
D
8
1
D
1
8
D
7
2
D
2
7
D
6
3
D
3
S
5
4
G
4
W
1.3
2.5
0.7
1.3
A
6
5
C6 = Specific Device Code
M = Month Code
°C/W
ORDERING INFORMATION
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
 Semiconductor Components Industries, LLC, 2004
MARKING
DIAGRAM
PIN
CONNECTIONS
C6 M
Symbol
1
Package
Shipping†
NTHS4101PT1
ChipFET
3000 Tape / Reel
NTHS4101PT1G
ChipFET
(Pb−free)
3000 Tape / Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHS4101P/D
NTHS4101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
V(Br)DSS
VGS = 0 Vdc, ID = −250 Adc
−20
Gate−Body Leakage Current Zero
IGSS
VDS = 0 Vdc, VGS = 8.0 Vdc
100
nAdc
Zero Gate Voltage Drain Current
IDSS
VDS = −16 Vdc, VGS = 0 Vdc
VDS = −16 Vdc, VGS = 0 Vdc,
TJ = 85°C
−1.0
−5.0
Adc
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 Adc
−1.5
Vdc
Static Drain−to−Source On−Resistance
RDS(on)
VGS = −4.5 Vdc, ID = −4.8 Adc
VGS = −2.5 Vdc, ID = −4.2 Adc
VGS = −1.8 Vdc, ID = −1.0 Adc
21
30
42
34
40
52
m
Forward Transconductance
gFS
VDS = −5.0 Vdc, ID = −4.8 Adc
15
Diode Forward Voltage
VSD
IS = −4.8 Adc, VGS = 0 Vdc
−0.8
Input Capacitance
Ciss
2100
Output Capacitance
Coss
VDS = −16 Vdc
VGS = 0 V
f = 1.0
1 0 MHz
Transfer Capacitance
Crss
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
Vdc
ON CHARACTERISTICS (Note 2)
−0.45
S
−1.2
V
DYNAMIC CHARACTERISTICS
pF
290
200
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
td(on)
VDD = −16 Vdc
8.0
tr
VGS = −4.5 Vdc
28
td(off)
ID = −4.5 Adc
75
tf
RG = 2.5 60
Qg
VGS = −4.5 Vdc
25
Qgs
ID = −4.5 Adc
4.0
Qgd
VDS = −16 Vdc (Note 3)
7.0
2. Pulse Test: Pulse Width = 250 s, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
ns
35
nC
NTHS4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
−1.8 V
8
7
6
5
−1.6 V
4
3
2
−1.4 V
1
1
0
2
3
4
5
9
8
7
6
5
4
125°C
3
25°C
2
TJ = −55°C
1
−1.2 V
0
0
7
6
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.5
2.5
1
1.5
2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
3
1.5
0.1
VGS = −4.5 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = −1.8 V
0.08
0.06
0.04
VGS = −2.5 V
0.02
VGS = −4.5 V
2
4
8
10
12
−ID, DRAIN CURRENT (AMPS)
6
14
1.3
1.1
0.9
0.7
0.5
−50
0
16
−25
0
25
75
100
125
Figure 4. On−Resistance Variation with
Temperature
10000
VGS = 0 V
TJ = 125°C
1000
TJ = 100°C
100
10
TJ = 25°C
1
0.1
0
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
10
TJ = 25°C
VGS = −10 V to −2.4 V
9
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
2
4
6
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. Drain−to−Source Leakage Current
vs. Voltage
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3
8
150
NTHS4101P
5000
VDS = 0 V
C, CAPACITANCE (pF)
4500
VGS = 0 V
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
4000
3500
3000
2500
Ciss
Crss
2000
1500
1000
Coss
500
0
−6 −4 −2 0 2
−VGS −VDS
4
8
6
10 12 14 16 18 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
QT
4
3
2
Q2
Q1
1
ID = −4.5 A
TJ = 25°C
0
0
21
15
18
6
9
12
Qg, TOTAL GATE CHARGE (nC)
3
24
27
Figure 7. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
Figure 6. Capacitance Variation
1000
5
100
−IS, SOURCE CURRENT (AMPS)
VDD = −16 V
ID = −4.5 A
VGS = −4.5 V
td(off)
tf
tr
10
td(on)
1
1
10
VGS = 0 V
TJ = 25°C
4
3
2
1
0
0.4
100
RG, GATE RESISTANCE (OHMS)
0.5
0.6
10
0.1
0.01
0.1
0.8
0.9
1.0
Figure 9. Diode Forward Voltage vs. Current
100
1
0.7
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
−I D, DRAIN CURRENT (AMPS)
t, TIME (ns)
5
10 s
100 s
1 ms
VGS = −8 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10
1
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTHS4101P
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE E
A
8
M
7
6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
STANDARD IS 1206A−03.
K
5
S
5
6
7
8
4
3
2
1
B
1
2
3
4
L
D
J
G
C
0.05 (0.002)
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
DIM
A
B
C
D
G
J
K
L
M
S
DRAIN
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
DRAIN
MILLIMETERS
MIN
MAX
2.95
3.10
1.55
1.70
1.00
1.10
0.25
0.35
0.65 BSC
0.10
0.20
0.28
0.42
0.55 BSC
5 ° NOM
1.80
2.00
INCHES
MIN
MAX
0.116
0.122
0.061
0.067
0.039
0.043
0.010
0.014
0.025 BSC
0.004
0.008
0.011
0.017
0.022 BSC
5 ° NOM
0.072
0.080
SOLDERING FOOTPRINTS*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.727
0.068
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
0.178
0.007
0.711
0.028
mm inches
0.66
0.026
Basic
Style 1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm inches
NTHS4101P
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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