Vishay DG442 Quad spst cmos analog switch Datasheet

DG441/442
Vishay Siliconix
Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG441/442 monolithic quad analog switches are
designed to provide high speed, low error switching of
analog and audio signals. The DG441 has a normally closed
function. The DG442 has a normally open function.
Combining low on-resistance (50 Ω, typ.) with high speed
(tON 150 ns, typ.), the DG441/442 are ideally suited for
upgrading DG201A/202 sockets. Charge injection has been
minimized on the drain for use in sample-and-hold circuits.
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To achieve high voltage ratings and superior switching
performance, the DG441/442 are built on Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer
prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off.
Low On-Resistance: 50 Ω
Low Leakage: 80 pA
Low Power Consumption: 0.2 mW
Fast Switching Action-tON: 150 ns
Low Charge Injection-Q: - 1 pC
DG201A/DG202 Upgrades
TTL/CMOS-Compatible Logic
Single Supply Capability
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
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Less Signal Errors and Distortion
Reduced Power Supply Requirements
Faster Throughput
Improved Reliability
Reduced Pedestal Errors
Simplifies Retrofit
Simple Interfacing
APPLICATIONS
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Audio Switching
Battery Powered Systems
Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN1
1
16
IN2
D1
IN1
IN2
NC
D2
Key
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
Dual-In-Line and SOIC
3
5
12
NC
1
20
S1
4
V-
5
NC
6
DG441
GND
7
Top View
S4
8
DG441
GND
2
19
18
S2
17
V+
16
NC
15
NC
14
S3
LCC
Top View
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
9
D4
10
IN4
11
NC
12
IN3
13
D3
TRUTH TABLE
Logic
0
1
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
DG441
ON
OFF
DG442
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
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1
DG441/442
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG441DJ
DG441DJ-E3
16-Pin Plastic DIP
DG442DJ
DG442DJ-E3
DG441DY
DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
- 40 to 85 °C
16-Pin Narrow SOIC
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
Limit
44
GND to V-
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
Digital Inputsa, VS, VD
Continuous Current (Any Terminal)
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Package)b
Unit
V
mA
100
(AK Suffix)
- 65 to 150
(DJ, DY Suffix)
- 65 to 125
16-Pin Plastic DIPc
450
16-Pin CerDIPd
900
16-Pin Narrow SOICd
900
LCC-20d
1200
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
INX
V-
Level
Shift/
Drive
V+
GND
V-
Figure 1.
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Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
SPECIFICATIONSa FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Symbol
VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 10 V
V+ = 15 V, V– = - 15 V
Room
Full
Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
- 15
15
- 15
Maxd
Unit
15
V
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
On-Resistance Match Between
Channelse
ΔrDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage Current
ID(on)
Full
V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
50
Room
Full
85
100
85
100
4
5
4
5
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Room
Full
± 0.08
- 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
Full
- 0.01
- 500
500
- 500
500
Full
0.01
- 500
500
- 500
500
Ω
nA
Digital Control
Input Current VIN Low
IIL
Input Current VIN High
IIH
Dynamic Characteristics
Turn-On Time
DG441
Turn-Off Time
DG442
Charge Injectione
Off Isolatione
Crosstalke (Channel-to-Channel)
RL = 1 kΩ, CL = 35 pF
Room
150
250
250
tOFF
VS = ± 10 V
See Figure 2
Room
90
120
120
Room
110
210
210
Q
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Ω
Room
-1
OIRR
XTALK
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
nA
tON
Source Off Capacitancee
e
VIN under test = 0.8 V,
All Other = 2.4 V
VIN under test = 2.4 V
All Other = 0.8 V
CD(on)
RL = 50 Ω, CL = 5 pF
f = 1 MHz
f = 1 MHz
IGND
60
100
Room
4
Room
4
VANALOG = 0 V
Room
16
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Full
Room
Full
Full
15
- 0.0001
I+
I-
Room
Room
- 15
ns
pC
dB
pF
100
-1
-5
- 100
100
-1
-5
- 100
µA
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DG441/442
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
12
0
VIN = 2.4 V, 0.8 Vf
Tempb
rDS(on)
IS = - 10 mA, VD = 3 V, 8 V
V+ = 10.8 V
Room
Full
100
160
200
tON
RL = 1 kΩ, CL = 35 pF
Room
300
450
450
Room
60
200
200
Room
2
Full
Room
Full
Full
15
- 0.0001
Symbol
Typc
Maxd
Unit
12
V
160
200
Ω
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
VANALOG
tOFF
Charge Injection
Q
Power Supplies
Positive Supply Current
I+
Negative Supply Current
Ground Current
Full
VS = 8 V
See Figure 2
CL = 1nF, Vgen = 6 V, Rgen = 0 Ω
I-
V+ = 13.2 V, V- = 0 V
VIN = 0 or 5 V
IGND
0
- 15
ns
pC
100
-1
- 100
- 100
100
-1
- 100
- 100
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
±5V
80
60
±8V
± 10 V
± 12 V
40
± 15 V
± 20 V
20
0
r DS(on) – Drain-Source On-Resistance (Ω)
r DS(on) – Drain-Source On-Resistance (Ω)
100
V+ = 15 V
V- = - 15 V
70
60
125 °C
50
85 °C
40
25 °C
30
20
- 55 °C
0 °C
- 40 °C
10
0
- 20
- 15
- 10
-5
0
5
10
15
20
- 15
- 10
- 5
VD – Drain Voltage (V)
0
5
10
15
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltage
rDS(on) vs. VD and Temperature
300
140
r DS(on) – Drain-Source On-Resistance (Ω)
r DS(on) – Drain-Source On-Resistance (Ω)
V- = 0 V
250
V+ = 5 V
200
150
8V
100
10 V
12 V
15 V
50
20 V
0
120
125 °C
85 °C
100
80
25 °C
60
- 55 °C
40
0 °C
- 40 °C
20
V+ = 12 V
V- = 0 V
0
4
0
8
12
16
20
0
2
4
VD − Drain Voltage (V)
6
8
10
12
VD – Drain Voltage (V)
rDS(on) vs. VD and Unipolar
Power Supply Voltage
rDS(on) vs. VD and Temperature
(Single 12-V Supply)
50
140
CL = 1 nF
40
120
Crosstalk
30
100
V+ = 15 V
V- = - 15 V
Q (pC)
(–dB)
20
80
60
10
0
Off Isolation
40
V+ = 12 V
V- = 0 V
- 10
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
20
- 20
0
- 30
100
1k
10 k
100 k
1M
f – Frequency (Hz)
Crosstalk and Off Isolation vs. Frequency
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
10 M
- 10
-5
0
5
10
VS – Source Voltage (V)
Charge Injection vs. Source Voltage
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DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.4
20
IS(off) , ID(off)
0
1.6
V IN (V)
I S, I D (pA)
- 20
0.8
- 40
ID(on)
- 60
V+ = 15 V
V- = - 15 V
For I(off), V D = - VS
- 80
0
±5
0
± 10
± 15
- 100
- 15
± 20
- 10
0
-5
5
VD or V S – Drain or Source Voltage (V)
Switching Threshold vs. Supply Voltage
Source/Drain Leakage Currents
10
15
10
V+, V– Positive and Negative Supplies (V)
50
V+
IS(off) , ID(off)
44
40
0
S
5 V – CMOS
Compatible
D
- 10
V+ (V)
I S, I D (pA)
IN
IS(on) + ID(on)
- 20
30
V20
TTL Compatible
VIN = 0.8 V, 2.4 V
V+ = 12 V
V- = 0 V
For ID, V S = 0
For IS, V D = 0
- 30
10
CMOS
Compatible
3
0
- 40
0
2
4
6
8
10
12
0
- 10
VD or V S – Drain or Source Voltage (V)
- 20
- 30
- 40
- 50
V- – Negative Supply (V)
Source/Drain Leakage Currents (Single 12 V Supply)
Operating Voltage
160
500
V- = 0 V
140
tON
400
120
100
t (ns)
t (ns)
tON
300
80
200
tOFF
60
100
40
tOFF
20
± 10
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6
± 12
± 14
± 16
± 18
± 20
± 22
0
8
10
12
14
16
18
20
22
Supply Voltage (V)
VS − Source Voltage (V)
Switching Time vs. Power Supply Voltage
Switching Time vs. Power Supply Voltage
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
TEST CIRCUITS
+ 15 V
3V
Logic
Input
50 %
V+
0V
D
S
10 V
IN
VO
RL
1 kΩ
3V
GND
tr < 20 ns
tf < 20 ns
50 %
CL
35 pF
tOFF
Switch
Input
VS
Switch
Output
0V
VO
80 %
80 %
V-
- 15 V
CL (includes fixture and stray capacitance)
tON
Note:
Logic input waveform is inverted for DG442.
Figure 2. Switching Time
+ 15 V
ΔV
O
VO
V+
Rg
D
S
INX
VO
IN
CL
1 nF
3V
V-
GND
OFF
ON
OFF
(DG441)
INX
OFF
ON
Q = ΔVO x CL
OFF
(DG442)
- 15 V
Figure 3. Charge Injection
C = 1 mF tantalum in parallel with 0.01 mF ceramic
+ 15 V
C
+ 15 V
C
V+
S1
VS
Rg = 50 Ω
D1
V+
50 Ω
IN1
0 V, 2.4 V
S2
NC
RL
IN2
GND
V-
RL
IN
0 V, 2.4 V
0 V, 2.4 V
VO
D
Rg = 50 Ω
VO
D2
S
VS
GND
V-
C
C
- 15 V
- 15 V
XTA LK Isolation = 20 log
C = RF bypass
Off Isolation = 20 log
VS
VO
VS
VO
Figure 5. Off Isolation
Figure 4. Crosstalk
+ 15 V
C
S
V+
Meter
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V-
C
- 15 V
Figure 6. Source/Drain Capacitances
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
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DG441/442
Vishay Siliconix
APPLICATIONS
+ 24 V
+ 15 V
RL
V+
DG442
I=3A
150 Ω
+ 15 V
VN0300 L, M
IN
+ 15 V
VIN
1/4 DG442
10 kΩ
+ 15 V
GND
S
+
D
VOUT
-
CH
V-
IN
0 = Load Off
1 = Load On
-
H = Sample
L = Hold
Figure 8. Open Loop Sample-and-Hold
Figure 7. Power MOSFET Driver
VIN
- 15 V
+
+
-
VOUT
+ 15 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
GAIN1
AV = 1
R1
90 kΩ
GAIN2
AV = 10
R2
5 kΩ
With SW4 Closed
VOUT
VIN
GAIN3
AV = 20
R3
4 kΩ
GAIN4
AV = 100
R4
1 kΩ
=
R1 + R2 + R3 + R4
= 100
R4
DG441 or DG442
V-
GND
- 15 V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70053.
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Document Number: 70053
S-71241–Rev. I, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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