Renesas HAT1038R-EL-E Silicon p channel power mos fet high speed power switching Datasheet

Preliminary
HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G1150-0600
Rev.6.00
Aug 25, 2009
Features
•
•
•
•
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
3
12
5 6
D D
4
G
1, 3
2, 4
5, 6, 7, 8
4
S1
MOS1
Source
Gate
Drain
S3
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT1038R
HAT1038RJ
Avalanche energy
HAT1038R
HAT1038RJ
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
ID
Note 1
ID (pulse)
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Note 3
Pch
Tch
Tstg
Value
–60
±20
–3.5
Unit
V
V
A
–28
–3.5
—
–3.5
—
1.05
2
A
A
—
A
—
mJ
W
3
150
–55 to +150
W
°C
°C
PW ≤ 10 μs, duty cycle ≤ 1%
1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 1 of 7
HAT1038R, HAT1038RJ
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak voltage
Gate to source leak current
HAT1038R
Zero gate voltage drain
current
HAT1038RJ
Zero gate voltage drain
current
HAT1038R
HAT1038RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
5. Pulse test
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 2 of 7
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
Min
–60
±20
—
—
—
—
—
–1.2
—
—
3
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
0.12
0.16
4.5
600
290
75
11
30
100
Max
—
—
±10
–1
–0.1
—
–10
–2.2
0.15
0.23
—
—
—
—
—
—
—
Unit
V
V
μA
μA
μA
μA
μA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
tf
VDF
trr
—
—
—
55
–0.98
70
—
–1.28
—
ns
V
ns
IDSS
IDSS
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –48 V, VGS = 0
Ta = 125°C
VDS = –10 V, ID = –1 mA
ID = –2 A, VGS = –10 V Note 5
ID = –2 A, VGS = –4 V Note 5
ID = –2 A, VDS = –10 V Note 5
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V, ID = –2 A,
VDD ≅ –30 V
IF = –3.5 A, VGS = 0 Note 5
IF = –3.5 A, VGS = 0
diF/dt = 50 A/μs
HAT1038R, HAT1038RJ
Preliminary
Main Characteristics
Power vs. Temperature Derating
Dr
2.0
ive
er
at
ion
Op
at
1.0
ive
er
Dr
Op
1
ion
50
100
150
Ambient Temperature
10
–10
200
0μ
1m
s
PW
s
=
Op
10
era
ms
tio
n(
Operation in
PW N
o
≤ 1 te 6
this area is
0s
limited by RDS (on)
)
–3
DC
–1
–0.3
–0.1
–0.03 Ta = 25°C
1 shot pulse
–0.01
–1
–0.1 –0.3
0
0
10 μs
–30
Drain Current
3.0
–100
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2
Channel Dissipation
Pch (W)
4.0
Maximum Safe Operation Area
–3
–10
–30
–100
Drain to Source Voltage VDS (V)
Ta (°C)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
–10
–10 V
–5 V
–4 V
–8
–3.5 V
Pulse Test
ID (A)
ID (A)
–10
–3 V
–4
–2
VGS = –2.5 V
0
–2
–4
–6
Drain to Source Voltage
–0.4
–0.3
ID = –2 A
–0.2
–1 A
–0.1
–0.5 A
–4
–8
–12
Gate to Source Voltage
–16
–20
VGS (V)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 3 of 7
–1
–2
–3
–4
Gate to Source Voltage
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
0
–2
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
25°C
Tc = 75°C
0
0
–10
–8
–4
–25°C
0
0
–8
–6
Drain Current
Drain Current
–6
VDS = 10 V
Pulse Test
1
Pulse Test
0.5
VGS = –4 V
0.2
0.1
–10 V
0.05
0.02
0.01
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT1038R, HAT1038RJ
0.5
Pulse Test
0.4
ID = –2 A
–1 A
0.3
–0.5 A
VGS = –4 V
0.2
–2 A
0.1
–0.5 A, –1 A
–10 V
0
–40
0
40
80
Case Temperature
120
160
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
VDS = 10 V
Pulse Test
0.2
–0.1 –0.2
Tc (°C)
–5
–10
2000
VGS = 0
f = 1 MHz
1000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
–2
Typical Capacitance vs.
Drain to Source Voltage
500
100
50
20
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
10
5
–0.1 –0.2
Ciss
500
100
50
–1
–2
–5
0
–10
–8
VDD = –50 V
–25 V
–10 V
VDS
–12
–16
–80
ID = –3.5 A
–100
0
8
16
Gate Charge
24
32
Qg (nc)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 4 of 7
–30
–40
–50
–20
40
VGS (V)
1000
Switching Time t (ns)
VGS
Gate to Source Voltage
–4
–40
–20
Switching Characteristics
0
VDD = –10 V
–25 V
–50 V
–10
Drain to Source Voltage VDS (V)
IDR (A)
0
–60
Crss
20
Dynamic Input Characteristics
–20
Coss
200
10
–0.5
Reverse Drain Current
VDS (V)
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
–0.5
300
td(off)
100
tf
30
tr
td(on)
10
3 V = –10 V, V = –30 V
GS
DD
PW = 5 μs, duty ≤ 1 %
1
–0.5 –1
–2
–0.1 –0.2
Drain Current
ID (A)
–5
–10
HAT1038R, HAT1038RJ
Preliminary
Reverse Drain Current IDR (A)
–10
–8
–6
–10 V
VGS = 0, 5 V
–4
–5 V
–2
Pulse Test
0
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
–2.0
2.5
IAP = –3.5 A
VDD = –25 V
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
2.0
1.5
1.0
0.5
0
25
50
75
100
125
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
u
tp
D=
PDM
lse
o
sh
PW
T
PW
T
1
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.0001
10 μ
t
ho
D=
PDM
lse
0.001
pu
PW
T
PW
T
1s
100 μ
1m
10 m
100 m
1
Pulse Width PW (S)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 5 of 7
150
Channel Temperature Tch (°C)
VSD (V)
10
100
1000
10000
HAT1038R, HAT1038RJ
Preliminary
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
–15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 6 of 7
10%
tr
10%
td(off)
tf
HAT1038R, HAT1038RJ
Preliminary
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
A1
A
L1
L
y
HE
e
x
y
Z
L
L1
Detail F
Ordering Information
Part Name
HAT1038R-EL-E
HAT1038RJ-EL-E
Quantity
2500 pcs
2500 pcs
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 7 of 7
Shipping Container
Taping
Taping
D
E
A2
A1
A
bp
b1
c
c1
Dimension in Millimeters
Min
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
8°
0°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
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Colophon .7.2
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