Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0470 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz • 12.5 dBm Typical P1 dB at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable (k>1) • Hermetic Gold-ceramic Microstrip Package Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9576E OUT MSA Vd = 5.25 V 6-334 70 mil Package MSA-0470 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 2.5 GHz f3 dB 3 dB Bandwidth VSWR Units Min. Typ. Max. dB 7.5 8.5 9.5 dB ± 0.6 ± 1.0 GHz 4.0 Input VSWR f = 0.1 to 2.5 GHz 1.7:1 Output VSWR f = 0.1 to 2.5 GHz 2.0:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 25.5 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 4.75 5.25 5.75 –8.0 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. 6-335 MSA-0470 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA) S21 S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .18 .18 .18 .17 .16 .16 .16 .21 .26 .32 .37 .40 .41 .42 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 179 179 179 –179 –176 –174 –166 –163 –162 –170 –177 175 166 155 8.5 8.5 8.5 8.5 8.4 8.3 8.2 7.8 7.3 6.5 5.7 4.7 3.9 3.1 2.67 2.67 2.67 2.65 2.64 2.61 2.56 2.46 2.33 2.12 1.93 1.73 1.57 1.44 176 172 163 155 147 138 117 97 83 65 38 33 20 7 –16.4 –16.4 –16.4 –16.2 –16.1 –15.9 –15.5 –14.6 –13.8 –13.5 –13.2 –12.6 –12.4 –11.9 .151 .151 .152 .155 .158 .161 .169 .186 .204 .212 .220 .234 .239 .255 1 2 3 5 8 6 9 9 12 10 7 3 –1 –6 .10 .10 .13 .16 .19 .22 .29 .33 .36 .40 .40 .40 .39 .37 –14 –30 –50 –67 –79 –90 –111 –131 –142 –156 –164 –170 –173 –176 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 12 80 9 TC = +125°C TC = +25°C 10 TC = –55°C 60 8 I d (mA) Gain Flat to DC 6 G p (dB) G p (dB) 8 40 7 6 4 20 0.1 0.3 0.5 1.0 3.0 4 0 6.0 1 2 3 FREQUENCY (GHz) 20 7 12 P1 dB 10 9 8 7 NF +25 60 70 7.5 6 +85 5 +125 7.0 15 12 I d = 50 mA 6.5 9 NF (dB) GP 7 –25 50 Figure 3. Power Gain vs. Current. I d = 70 mA 6 40 18 11 8 30 I d (mA) 21 P1 dB (dBm) P1 dB (dBm) 6 Figure 2. Device Current vs. Voltage. 13 G p (dB) 5 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. 5 –55 4 NF (dB) 0 0.1 GHz 1.0 GHz 2.0 GHz 5 2 6 3 0.1 6.0 I d = 30 mA I d = 30 mA I d = 50 mA I d = 70 mA 5.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=50mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-336 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF OUTPUT AND BIAS RF INPUT 3 1 2 .004 ± .002 .10 ± .05 GROUND .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 6-337