Hittite HMC980LP4E Active bias controller high current Datasheet

HMC980LP4E
v01.0911
Typical Applications
Features
•
Automatic Gate voltage adjustment (No Calibration required)
Military & Space
•
Supply Voltage (5V to 16.5V)
•
Test Instrumentation
•
•
Fiber Optic Modulator Driver Biasing
Bias both Enhancement or Depletion type
devices
•
CATV Laser Driver Biasing
•
Cellular Base Station
•
Wireless Infrastructure Equipment
•
Microwave Radio & VSAT
•
13
BIAS CONTROLLERS - SMT
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Functional Diagram
•
Adjustable Drain Current up to 1.6 A
•
Sink or source gate current
•
Internal negative voltage generation
•
Can be disabled to use external negative rail
•
Fast Enable/Disable
•
Trigger-out Output for Daisy Chain
•
Power-Up and Power-Down Sequencing
•
Over/Under Current Alarm with built-in hystresis
•
24 Lead 4mmx4mm QFN Package: 16mm2
General Description
HMC980LP4E is an active bias controller that can
automatically adjust the gate voltage of an external
amplifier to achieve constant bias current. With an
integrated controller, HMC980LP4E achieves safe
power on/off, disable/enable and automatic supply
sequencing ensuring the safety of the external
amplifier. It can be used to bias any enhancement
and depletion type amplifier operating in Class-A
regime with drain voltages (VDRAIN) from 5V to 16.5V
and drain currents (IDRAIN) up to 1.6 A, offering a
complete biasing solution.
HMC980LP4E achieves excellent bias stability over
supply, temperature and process variations, and
eliminates the required calibration procedures usually
employed to prevent RF performance degradation due
to such variations.
The HMC980LP4E is housed in an RoHS compliant
4x4 mm QFN leadless package with an exposed
backside pad to improve thermal characteristics.
13 - 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Electrical Specifications, TA = +25°C, VDD=12V, VDIG= 3.3V, Depletion Master
Unless Otherwise Noted
Parameter
Supply Voltage
Symbol
Conditions
Vdd
Charge Pump Oscillator Frequency
FOSC
Voltage Reference
VREF
Enable Input Threshold
S0, S1 Input Threshold
ENTHRS
SWTHRS
16.5
Units
V
19
mA
EN = GND
7.5
mA
EN = VDIG
20
mA
EN = GND
9
mA
VDIG= 3.3 V
3.5
mA
VDIG= 5 V
6.5
mA
300
kHz
IDD
IDIG
Max.
EN = VDIG
VDD = 12V
VDIG Quiescent Current
Typ.
5
VDD = 5V
VDD Quiescent Current
Min.
1.44
Vinlow
Vinhigh
V
1
V
1
V
1.4
V
Vinlow
Vinhigh
1.4
V
13
DRAIN Current Adjustment Range
DRAIN Current Change Over Digital Voltage
DRAIN Current Change Over Temperature
DRAIN Range
IDRAIN
ΔIDRAINV
S1=S0=GND
0.05
0.3
A
S1=GND, S0=VDIG
0.3
0.6
A
S1=VDIG, S0=GND
0.6
1.2
A
S1=VDIG, S0=VDIG
1.2
1.6
A
VDRAIN set to 12V,
IDRAIN set to 400 mA
VDRAIN
VDRAIN Change Over Temperature
ΔVDRAIN
0.4
%/V
0.023
%/C
5
VDRAIN set to 12V,
IDRAIN set to 400 mA
16.5
0.02
V
%/C
VNEG Characteristics
Negative Voltage Output
VNEG
VNEG Current Sink
INEG
0
-2.46
IG
-4
V
60
mA
4
mA
VGATE Characteristics
GATE Current Supply
VGATE Low Level
VG_MIN
VNEG
V
VGATE High Level
VG_MAX
VNEG+4.5
V
VG2 Characteristics
VG2 Current Supply
IG2
VG2 Adjustment Range
VG2
Adjustment Range
VDIG
VDIG Quiescent Current
IDIG
VG2<2V
-0.1
0.1
mA
6V>VG2>2V
-1
1
mA
VG2>6V
-5
5
mA
1
VDD-1.3
V
3.3
5
V
BIAS CONTROLLERS - SMT
VDRAIN Characteristics
VDIG Characteristics
VDD= 12V,
VDIG=EN =3.3 V
3.5
mA
2.8
Ohm
SW Characteristics
S1=S0=GND
Internal Switch Resistance
RDS_ON
S1=GND, S0=VDIG
1.55
Ohm
S1=VDIG, S0=GND
0.85
Ohm
S1=VDIG, S0=VDIG
0.7
Ohm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 2
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Bias Current Accuracy[1]
Bias Current Accuracy[2]
1475
405
IDrain is set to: 388mA
400
1425
IDRAIN (mA)
IDRAIN (mA)
395
390
385
1400
1375
1350
380
+25 C
+85 C
-40 C
375
+25 C
+85 C
-40 C
1325
1300
370
3.3
3.5
3.6
3.8
4.0
13
4.2
4.3
4.5
4.7
4.8
3.3
5.0
3.5
3.6
3.8
4
4.3
4.5
4.7
14
5
14
12
12
VDD (V)
VDRAIN (V)
VDIG(V)
VG2 (V)
VNEG (V)
VGATE (V)
8
VDD(V)
VDRAIN (V)
VDIG (V)
VG2 (V)
VNEG (V)
VGATE (V)
10
VOLTAGE (V)
10
6
4
2
8
6
4
2
0
0
-2
-2
-4
-4
0
10
20
30
40
50
60
TIME (ms)
70
80
90
100
Enable Waveform
0
20
40
60
80 100 120
TIME (ms)
140
160
180
200
Disable Waveform
14
16
12
12
EN(V)
VDRAIN (V)
VG2 (V)
VNEG (V)
VGATE (V)
10
VOLTAGE (V)
8
4
0
8
6
4
2
0
-4
EN(V)
VDRAIN (V)
VG2 (V)
VNEG (V)
VGATE (V)
-8
-2
-4
-6
-12
0
1
2
3
4
5
TIME (ms)
6
4
5
6
7
8
TIME (ms)
[1] HMC637LP5 is used as external amplifier
[2] HMC591LP5 is used as external amplifier
13 - 3
4.8
Shutdown Waveform
Power Up Waveform
VOLTAGE (V)
4.2
VDIG (V)
VDIG (V)
VOLTAGE (V)
BIAS CONTROLLERS - SMT
IDrain is set to: 1409mA
1450
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9
10
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Load Regulation @ VDD=5V, VDIG=3.3V,
SW0=3.3V, SW1=GND
6
6
5
5
4
3
2
100
150
200
+25C
+85C
-40C
3
+25C
+85C
-40C
50
4
250
2
300
300
350
400
IDRAIN (mA)
Load Regulation @ VDD=16.5V,
VDIG=5.0V, SW0=GND, SW1=VDIG
500
550
17
17
16
16
15
+25C
+85C
-40C
+25C
+85C
-40C
700
800
900
1000
1100
13
1200
1200
1300
1400
1500
1600
IDRAIN (mA)
IDRAIN (mA)
VNEG Load Regulation @ VDD=5V
VNEG Load Regulation @ VDD=16.5V
-2
-2
-2.1
-2.1
-2.2
-2.2
VNEG (V)
VNEG (V)
13
15
14
14
13
600
600
Load Regulation @ VDD=16.5V,
VDIG=5.0V, SW0=VDIG, SW1=VDIG
VDRAIN (V)
VDRAIN (V)
450
IDRAIN (mA)
-2.3
-2.4
BIAS CONTROLLERS - SMT
VDRAIN (V)
VDRAIN (V)
Load Regulation @ VDD=5V, VDIG=3.3V,
SW0=GND, SW1=GND
+25 C
+85 C
-40 C
-2.3
-2.4
+25 C
+85 C
-40 C
-2.5
-2.5
0
5
10
15
INEG (mA)
20
25
30
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
INEG (mA)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 4
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
40
-2.2
40
-2.25
30
-2.25
30
-2.3
20
10
-2.35
10
-2.4
0
-2.4
0
VNEG (V)
20
-2.45
-10
-20
-2.5
-20
-2.55
-30
-2.55
-30
-2.6
-40
-2.6
-2.45
-10
-2.5
1
2
3
4
5
6
7
8
9
10
-40
0
1
2
3
4
TIME (ms)
13
7
8
10
10
9
-0.25
IDrain is set to : 388mA
VG2=0.97V
VG2=1.81V
VG2=3.73V
VG2=6.68V
8
7
VG2 (V)
-0.5
-0.75
-1
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
IDrain is set to : 388mA
6
5
4
3
+25C
+85C
-40C
-1.25
2
1
6
7
0
-8
-6
-4
-2
0
2
4
IG2 (mA)
IG (mA)
VNEG Line Regulation vs. Supply Voltage
-2.44
No load condition
VNEG (V)
-2.48
+25C
+85C
-40C
-2.5
9
VG2 Load Regulation @ VDD=12V [2]
0
VGATE (V)
6
TIME (ms)
VGATE Load Regulation @ VDD=12V [1]
-1.5
5
-2.46
5
7
9
11
13
15
17
SUPPLY VOLTAGE (V)
[1] HMC637LP5 is used as external amplifier
[2] HMC637LP5 is used as external amplifier
13 - 5
INEG (mA)
-2.3
-2.35
0
BIAS CONTROLLERS - SMT
VNEG Load Transient VDD=16.5V
-2.2
INEG (mA)
VNEG (V)
VNEG Load Transient VDD=5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
6
8
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Absolute Maximum Ratings
VDD
18V
10.6 °C/W
S0, S1, EN, ALM, VREF, VNEGFB,
VGATEFB, TRIG_OUT, ISENSE,
ALML, ISET, ALMH, FIXBIAS
Thermal Resistance (RTH)
(Junction to package bottom)
-0.5V to VDIG + 0.5V
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
CP_VDD
VDD-0.5V to VDD+0.5V
ESD Sensitivity (HBM)
Class 1A
CP_OUT, VG2_CONT, VG2, VDRAIN
-0.5V to VDD + 0.5V
VDIG
5.5V
VNEG
-4V to GND
VGATE
VNEG to GND
Junction Temperature
125 °C
Continuous Pdiss (T = 85 °C)
(Derate 94.79 mW/°C above 85 °C)
3.8 Watt
Note that there are two different voltage domains on
HMC980LP4E; a high voltage domain Vdd, and a low voltage
domain VDIG. Take necessary precautions not to violate ABS
MAX ratings of each subdomains.
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
BIAS CONTROLLERS - SMT
13
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Package Information
Part Number
Package Body Material
Lead Finish
HMC980LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [1]
H980
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 6
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Pin Descriptions
BIAS CONTROLLERS - SMT
13
13 - 7
Pin Number
Function
Description
1,2
VDD
Bias supply Pin. Connect supply voltage to this pin with
appropriate filtering.
3.4
S0,S1
Control pins for internal switch resistance. If left floating,
default to HIGH.
Refer to Table-1 in Application Notes for recommended
settings
5
EN
Enable pin. Bias control loop is enabled when Ven
is HIGH(VDIG). If left floating, Ven defaults to HIGH
(enabled).
6
ALM
Over/under current alarm. Provides an active high signal
(VDIG) if the quiescent bias exceed the upper threshold
or drops below the lower threshold.
19
TRIGOUT
Trigger out signal. Generates a HIGH (3.3V) signal when
the active bias system stabilizes. This signal can be
used to trigger next device (ENABLE) if more than one
HMC980LP4E is used in a daisy chain.
7
CP_VDD
Bias supply for negative voltage generator. Connect
supply voltage with appropriate filtering. CP_VDD
supply voltage should be same as VDD
8
CP_OUT
Negative voltage generator charge pump output. Negative voltage generator requires a flying capacitor, a
reservoir capacitor and two diodes to operate.
9
VDIG
3.3V-5V Digital Bias supply Pin. Connect supply voltage
to this pin with appropriate filtering..
10
VREF
1.44V reference voltage.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Pin Descriptions (Continued)
Function
Description
11
VNEGFB
Feedback (Control) pin for Negative Voltage Generator
Charge Pump. Float to activate the negative voltage
generator / Short to GND to disable the negative voltage
generator.
12
VGATEFB
Control pin for VGATEFB. Float VGATEFB when a
depletion mode transistor is biased. Selects the mode
of operation along with VNEGFB pin.
13
VG2_CONT
Control voltage of the second gate pin VG2. Use a
resistor divider between VDD and GND to set the voltage. VG2 is typically 1.3V lower than the VG2CONT
14
VG2
Second gate control.
VNEG
Negative input to the chip. Should be supplied with
CPOUT when negative voltage generator is enabled, or
connect to external VSS when negative voltage generator is enabled. Defaults to -2.5V. If a value different than
-2.5V required, please contact factory.
16
VGATE
Gate Control pin for external amplifier. Connect to the
gate (base) of the external amplifier. In order to guarantee stability, a 2.2μF capacitor should be connected
between the gate (base) terminal of the external amplifier and GND as close to the amplifier as possible.
17, 18
VDRAIN
Drain voltage. Should be connected to the supply terminal of the external amplifier. A minimum 10 nF capacitor
has to be placed close to the external amplifier to
improve load regulation.
15
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13
BIAS CONTROLLERS - SMT
Pin Number
13 - 8
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Pin Descriptions (Continued)
Pin Number
Function
Description
ISENSE
Drain current adjustment pin. To adjust the bias current
of the external amplifier connect a resistor (Rsense)
from ISENSE pin to GND according to eqn(2) on page
13-15. A high precision resistor (e.g. 0.5%, ±25 ppm
TCR) is recommended for good bias accuracy.
21
ALML
A high precision resistor (e.g. 0.5%, ±25 ppm TCR)
to GND is recommended for good bias accuracy. The
value of the resistor sets the threshold value for under
current alarm. If alarm feature is not used ALML can be
shorted to ISet.
22
ISET
A high precision resistor (e.g. 0.5%, ±25 ppm TCR)
between ALML and ISet is recommended for good bias
accuracy. The total external resistance from ISet pin to
GND should always be equal to 5 k Ω.
ALMH
A high precision resistor (e.g. 0.5%, ±25 ppm TCR) to
ISet pin is recommended for good bias accuracy. The
value of the resistor sets the threshold. If alarm feature
is not used ALMH can be shorted to ISet.
20
BIAS CONTROLLERS - SMT
13
13 - 9
23
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Pin Descriptions (Continued)
Pin Number
Function
Description
24
FIXBIAS
A high precision (e.g. 0.5%, ±25 ppm TCR) 10K resistor
to ground is recommended for good bias accuracy.
Interface Schematic
BIAS CONTROLLERS - SMT
13
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 10
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Evaluation Board Circuit
BIAS CONTROLLERS - SMT
13
Notes:
[1] A variable resistor is assembled on R10 slot to adjust bias current for evaluating various different amplifiers without
soldering.
13 - 11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Evaluation PCB
600-00098-00
TP12
TP3
C2
TP4
S1
TP9VDRAIN
C3
D1
C8
S0
C1
VDD
C9
R14
R11
R13
R12
R10
TP1
R4
C6
TP5
EN
TP6
TRIGOUT
TP11
TP10
TP8
VG2
R3
C5
TP2
C4
C7
ALM
VGATE
GND
TP7
VDIG
List of Materials for Evaluation PCB EVAL01-HMC980LP4E [1]
Item
Description
TP1-12
Test Point
C1, C4
4.7 µF Capacitor, 1210 Pkg.
C2, C5, C9
10 nF Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C6
1 µF Capacitor, 0603 Pkg.
C7
10 µF Capacitor, 0603 Pkg.
C8
2.2 µF Capacitor, X5R Pkg.
D1
Dual Series Shottky Barrier Diode,
BAT54SLT1
R3
5.1k Ohm Resistor, 0402 Pkg
R4
3.3k Ohm Resistor, 0402 Pkg.
R10
Trim Potentiometer
R11, R12
301 Ohm Resistor, 0402 Pkg.
R13
4.7k Ohm Resistor, 0402 Pkg.
R14
10k Ohm Resistor, 0402 Pkg.
U1
HMC980LP4E Switch Type ABC-High
Current Version-1
PCB [2]
EVAL01-HMC980LP4E Evaluation PCB
13
BIAS CONTROLLERS - SMT
GND
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: FR4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 12
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Application Notes
Detailed Description
All amplifiers require stable quiescent current to operate at their specifications. Many amplifiers in the market require
external biasing to achieve stable quiscent current. HMC980LP4E is a fully integrated biasing solution for such
amplifiers.With an internal feedback, the automatic gate voltage control achieves constant quiescent bias through the
amplifier under bias, independent of temperature and amplifier threshold variations. The quiescent current is adjusted
with a resistor connected externally. The HMC980LP4E employs an integrated control circuitry to manage safe
power-up and power-down sequencing of the targeted amplifier. The HMC980LP4E can provide auto-bias solution to
virtually any amplifier in the market (both enhancement and depletion type) with a quiescent current of up to 1.6A and
a supply voltage of up to 16.5V.
BIAS CONTROLLERS - SMT
13
The HMC980LP4E has an integrated negative voltage generator to create negative voltages required to drive depletion
mode amplifiers. If an external negative supply is already available or an enhancement mode device is targeted, the
negative voltage generator can be disabled.
The HMC980LP4E achieves excellent bias stability over supply and temperature variations. The gate control can
both sink and source current (±4 mA) which is required to compensate for charging gate current of the amplifier over
input power variations. The HMC980LP4E also generates a second gate voltage VG2. VG2 can be adjusted through
a resistor divider connected to VDD for the amplifiers which require second gate voltage.
The HMC980LP4E ensures safety of the external amplifier during turn on/off by automatically adjusting the sequence
of VDRAIN, VGATE and VG2 outputs.
The HMC980LP4E has a built-in over-under current alarm feature. If a fault conditions arises (either under or over
current) an alarm signal is generated (ALM, active HIGH). The current alarm signal provided in HMC980LP4E does
not affect the operation of the controller. It is included for monitoring purposes where a system level protection can be
implemented with external control circuitry.
The HMC980LP4E employs S0, S1 pins to control RDS_ON resistance of the internal switch between VDD and
VDRAIN. Refer to the section under the “Supply and Drain Voltage” section for details.
The HMC980LP4E has a built-in self protection feature to protect itself against short circuit conditions at the VDRAIN
output. The HMC980LP4E has also a built-in VNEG fault protection feature to protect both itself and the amplifier
under bias against short circuit conditions at the VNEG pin.
Digital Power Supply (VDIG)
The HMC980LP4E requires an external low voltage bias rail (3.3V to 5.0V). VDIG powers the internal logic circuitry.
VDIG draws and average of 3.5 mA from a 3.3V. VDIG can accept voltages up to 5.0V.
Supply and Drain Voltage (VDD and VDRAIN)
The VDD supply to the HMC980LP4E is directly connected to the VDRAIN output through an internal MOSFET switch.
This internal MOSFET is controlled through power-up sequencing which ensures that no voltage is applied to the drain
of the external amplifier until the gate voltage is pulled down to VNEG (ensuring external amplifier is pinched-off). The
VDRAIN output of the HMC980LP4E should be connected to the drain (collector) of the amplifier under bias for the
active bias control feedback and power-up/down sequencing to operate properly.
13 - 13
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
There will be a voltage drop from VDD to VDRAIN due to finite RDS_ON resistance of the internal switch. To
compensate for this voltage drop choose the VDD value as shown in equation (1).
VDD = VDRAIN + IDRAIN x RDS_ON
(1)
where VDRAIN is the supply voltage of the external amplifier and IDRAIN is the desired constant bias current through
the external amplifier.
Note that RDS_ON resistance of the internal FET switch can be adjusted through S0, S1 pins based on the DRAIN
current requirement as shown in table-1. RDS_ON is typically equal to 0.7 Ohm when S0 and S1 are pulled up to
VDIG, and is typically equal to 2.8 Ohm when S0 and S1 are pulled down to GND. If S0 and S1 pins are left floating,
it is pulled up to VDIG through an internal weak pull-up. Recommended settings for the S0 and S1 positions are given
in Table-1. Not using the HMC980LP4E in the recommended settings may increase the power dissipation of the part
and the part-to-part variation.
13
Table 1. Recomended Current Range Configuration
Condition
RD_ON Value (Ohm)
0.05 to 0.3
S1=S0=GND
2.8
0.3 to 0.6
S1=GND, S0=VDIG
1.55
0.6 to 1.2
S1=VDIG, S0=GND
0.85
1.2 to 1.6
S1=VDIG, S0=VDIG
0.7
Negative Voltage Generator (VNEGOUT)
The HMC980LP4E has internal regulated charge pump circuitry to generate the negative voltage (VNEGOUT) required
for depletion mode devices. The HMC980LP4E generates -2.5V at the VNEGOUT output in default configuration. It
requires two diodes and two capacitors connected externally as shown in the sample application schematics. It can
be disabled through the VGATEFB and VNEGFB pins, if an enhancement device is targeted or a negative supply is
already available in the system. In this configuration, simply connect the available negative supply to the VNEG pin.
See Table-2 for the operation mode selection. The HMC980LP4E is designed to reject the ripple on the VNEGOUT
pin by isolating VNEGOUT from the VGATE. Thus, switching noise of the charge-pump is effectively isolated from the
external amplifier.
Enable/Disable (EN)
BIAS CONTROLLERS - SMT
Current Range (A)
The active bias control loop is enabled when EN is pulled up to VDIG, and it is disabled when it is pulled down to
GND. If EN is left floating HMC980LP4E is enabled through an internal weak pull-up. Note that VNEG operation is
independent of EN condition. EN signal controls the operation of only VGATE, VG2 and VDRAIN outputs. When EN
pulled down to GND, the HMC980LP4E discharges VDRAIN and VG2 down to GND and it pulls the VGATE down to
VNEG. When EN pulled high to VDIG, HM980LP4E enables, VDRAIN and VG2, and enables the bias control loop to
automatically adjust the VGATE voltage. Please see the “Active Bias Control Loop” section for detailed explanation
and refer to the Enable and Disable waveforms for transient characteristics.
Active Bias Control Loop
The HMC980LP4E regulates the bias current (IDRAIN) of the amplifier under bias through VGATE output connected
to the gate of the external amplifier. In this closed loop operation the current passing through the amplifier under bias
is sampled and is used to automatically adjust VGATE to achieve constant quiescent bias through the external amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 14
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
The HMC980LP4E continuously adjusts VGATE voltage to achieve constant DRAIN current over any supply, temperature, process variations and threshold drifts due to aging. The part-to-part, temperature, and supply variation of
the HMC980LP4E is excellent. Thus, by using an accurate sense resistor connected to the ISENSE pin, expensive
calibration procedures in high volume production could be avoided.
The gate control of the HMC980LP4E is designed to both sink and source current in to the gate of the targeted amplifier (at least ±4 mA). This unique feature is important to achieve nearly constant quiescent bias through the amplifier
under varying gate current at different input power values.
The bias current passing through the external amplifier can be adjusted with RSENSE, where RSENSE is the R10
connected from ISENSE to GND. Use the relation given in equation (2) to set the desired bias current through the
external amplifier.
IDRAIN=150/Rsense (A)
BIAS CONTROLLERS - SMT
13
(2)
VG2 Voltage Adjustment
The HMC980LP4E generates a second gate voltage (VG2). VG2 can be adjusted through a resistor divider connected
to VG2_CONT for the amplifiers which require second gate voltage. Eqn. (3) gives the formula to adjust VG2:
VG2(V)= VDD*R4/(R3+R4) - 1.3
(3)
For instance, choosing 5.1k Ohm as R3 and 3.3k Ohm as R4 sets VG2 voltage to 3.4V when VDD=12V. For improved
accuracy, choose resistor values below 5k Ohm on R3.
Self Protection Feature
Due to the small resistance of the internal switch FET between VDD and VDRAIN, a large amount of current may flow
through the HMC980LP4E. HMC980LP4E limits the maximum current to self protect itself under such fault conditions,
by turning off VDRAIN and VGATE.
The HMC980LP4E will remain in this protection mode until a full power-cycle or enable/disable cycle is applied.
VNEG Fault Detection Feature
In depletion mode operation VNEG is continuously monitored against short circuit fault to GND. If VNEG rises above
a preset value (typically -0.6V) the system and the external amplifier are disabled by pulling VDRAIN and VG2 to GND
and VGATE to VNEG. The system will stay in this stand-by mode until short fault at VNEG is fixed.
Over/Under Current Alarm
The HMC980LP4E provides over and under current alarm indicator ALM (pin#6) signal. The ALM is pulled up to VDIG
when the IDRAIN current exceeds ± 6% (With the given R11, R12, and R13 values in application circuit) of IDRAIN
regulation target value as shown in Figure 1. The alarm threshold level is user adjustable through R11,R12, and R13
according to the following equations:
Over current ALM Threshold = Iocth = IDRAIN (1+R11/(R12+R13)),
Under current ALM Threshold = Iucth = IDRAIN (1-R12/(R12+R13)) ,
where R12+R13 should always be equal to 5 kΩ (%1 accuracy)
Threshold values possess a small built-in hysterisis. The condition of ALM signal does not effect the operation of
HMC980LP4E. It is provided only for monitoring purposes.
13 - 15
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Over current
Set current
Under current
ALARM
Figure 1. Current Alarm Behavior
Power-up and Enable Sequencing
To ensure the safety of the external amplifier, the HMC980LP4E provides an automatic power-up sequence for
enabling the active bias control loop. During start-up VDRAIN and VG2 are kept at GND while VGATE is taken to the
most negative supply available (VGATE=VNEG). This ensures that external amplifier is completely pinched-off before
VDRAIN is applied. When EN signal is received, VDRAIN is applied and the active bias loop is enabled. After the
VDRAIN is applied, VG2 is generated. The power-up sequence is completed by increasing the VGATE linearly until
the set IDRAIN value is reached.
For power-down and disabling, the same sequencing is applied in the reverse order.
Daisy-Chain Operation
BIAS CONTROLLERS - SMT
13
HMC980LP4E produces a trigger out signal (TRIGOUT pin#19) when the quiscent current is in regulation. This trigger
signal can be used to enable additional HMC980LP4E chips in a chain of amplifiers. The triggering sequence can be
routed in any way, from input to output, or from output to input depending on the use. Figure-2 shows a sample use
of three HMC980LP4Es in an amplification chain. Please note that, only one of the HMC980LP4E (in master mode)
is used to generate the negative voltage and the remaining HMC980LP4E (in slave mode) is set to receive external
negative voltage (which is provided from the master depletion mode HMC980LP4E). Generating negative voltage
from a single HMC980LP4E reduces the number of the components in the system, and decreases the over all current
consumption.
Please note that, to ensure proper start-up, the system enable signal should be applied to the depletion master mode
device that has the negative voltage generator.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 16
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
BIAS CONTROLLERS - SMT
13
Figure 2. Daisy Chain Operation
Operation Modes
HMC980LP4E can be configured to bias both enhancement and depletion mode external amplifiers. The mode of
operation can be selected by setting two pins (VNEGFB, VGATEFB) as tabulated in Table-2. The connection to the
VNEGIN should be adjusted accordingly.
In order not to bias external amplifier in a wrong region, please make sure that the correct mode of operation is
selected before powering up the HMC980LP4E.
The HMC980LP4E does not allow the internal negative voltage generator to work if an enhancement mode is selected.
Therefore, if VNEGFB is left floating while VGATEFB is grounded, HMC980LP4E will stay in standby mode.
Please note that in depletion slave mode the external negative voltage should be between -2.3V to -3.5V for
HMC980LP4E to operate. If your application requires negative voltages outside this range please contact Hittite
application support.
Table 2. Mode Selection
VNEGFB
MODE1
(Depletion/Master Mode)
MODE2
(Depletion/Slave Mode)
--MODE3
(Enhancement Mode)
13 - 17
VNEGIN
Description
FLOAT
Connected to
VNEGOUT
Depletion mode transistor. Internal negative voltage generator is
active and generates -2.5V. Sample application schematic given
shown in Fig.3a.
GND
FLOAT
Connected to
External VSS
Depletion mode transistor. Internal negative voltage generator is
disabled. An external negative voltage less than -2.3V should be
connected to VNEGIN. Sample application schematic given shown
in Fig.3b.
FLOAT
GND
N/A
Not allowed. HMC980LP4E stays in standby.
GND
Connected to
GND
Enhancement mode transistor. Internal negative voltage generator is
disabled. Sample application schematic given shown in Fig.3c.
FLOAT
GND
VGATEFB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Figure 3a. Depletion/Master Mode Amplifier Typical Application Circuit (Mode 1)
BIAS CONTROLLERS - SMT
13
Figure 3b. Depletion/Slave Mode Amplifier Typical Application Circuit (Mode 2)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 18
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
BIAS CONTROLLERS - SMT
13
Figure 3c. Enhancement Mode Amplifier Typical Application Circuit (Mode 3)
For biasing Hittite amplifiers compatable with HMC980LP4E refer to the Table 3, where values of the external
components are provided on typical application circuit shown in Figure 3a.
Table 3 - List of Bias Settings for Various Hittite Amplifiers
Hittite Part Number
VDRAIN
(V)
VDD
(V)
IDRAIN
(mA)
5
5.83
295
RSENSE
(kOhm)
R4
(kOhm)
R3
(kOhm)
VG2
(V)
S1
S0
open
open
-
GND
GND
GND
Gain Blocks & Drivers
HMC-AUH256
0.508
LNAs
HMC-ALH435
5
5.08
30
5.000
6.13
5
1.5
GND
HMC-ALH444
5
5.15
55
2.727
5.95
5
1.5
GND
GND
HMC490
5
5.56
200
0.750
open
open
-
GND
GND
HMC490LP5
5
5.56
200
0.750
open
open
-
GND
GND
HMC594
6
6.28
100
1.500
open
open
-
GND
GND
HMC594LC3B
6
6.28
100
1.500
open
open
-
GND
GND
HMC609
6
6.48
170
0.882
open
open
-
GND
GND
HMC609LC4
6
6.48
170
0.882
open
open
-
GND
GND
HMC753LP4E
5
5.15
55
2.727
5.95
5
1.5
GND
GND
Linear & Power
13 - 19
HMC-ABH209
5
5.22
80
1.875
open
open
-
GND
GND
HMC-ABH264
5
5.34
120
1.250
open
open
-
GND
GND
HMC442
5
5.24
85
1.765
open
open
-
GND
GND
HMC442LC3B
5
5.24
84
1.786
open
open
-
GND
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Table 3 - List of Bias Settings for Various Hittite Amplifiers (Continued)
HMC442LM1
VDRAIN
(V)
VDD
(V)
IDRAIN
(mA)
RSENSE
(kOhm)
R4
(kOhm)
R3
(kOhm)
VG2
(V)
S1
S0
5
5.24
85
1.765
open
open
-
GND
GND
HMC499
5
5.56
200
0.750
open
open
-
GND
GND
HMC499LC4
5
5.56
200
0.750
open
open
-
GND
GND
HMC-ABH241
5
5.62
220
0.682
open
open
-
GND
GND
HMC-APH403
5
5.74
475
0.316
open
open
-
GND
VDIG
HMC-APH460
5
5.77
900
0.167
open
open
-
VDIG
GND
HMC-APH462
5
6.22
1440
0.104
open
open
-
VDIG
GND
HMC-APH473
5
5.92
1080
0.139
open
open
-
VDIG
GND
HMC-APH478
5
5.77
900
0.167
open
open
-
VDIG
GND
HMC-APH510
5
5.99
640
0.234
open
open
-
GND
VDIG
HMC-APH518
5
5.81
950
0.158
open
open
-
VDIG
GND
HMC-APH596
5
6.12
400
0.375
open
open
-
GND
GND
HMC-APH608
5
5.81
950
0.158
open
open
-
VDIG
GND
HMC486
7
8.11
1300
0.115
open
open
-
VDIG
GND
HMC486LP5 /
HMC486LP5E
7
8.11
1300
0.115
open
open
-
VDIG
GND
HMC487LP5 /
HMC487LP5E
7
8.11
1300
0.115
open
open
-
VDIG
GND
HMC489LP5 /
HMC489LP5E
7
8.11
1300
0.115
open
open
-
VDIG
GND
HMC498
5
5.70
250
0.600
open
open
-
GND
GND
HMC498LC4
5
5.70
250
0.600
open
open
-
GND
GND
HMC590
7
7.70
820
0.183
open
open
-
VDIG
GND
HMC590LP5 /
HMC590LP5E
7
7.70
820
0.183
open
open
-
VDIG
GND
HMC591
7
8.14
1340
0.112
open
open
-
VDIG
GND
HMC591LP5 /
HMC591LP5E
7
8.14
1340
0.112
open
open
-
VDIG
GND
HMC592
7
8.16
750
0.200
open
open
-
GND
VDIG
HMC608LC4
5
5.87
310
0.484
open
open
-
GND
GND
HMC693
5
6.24
800
0.188
open
open
-
GND
VDIG
HMC756
7
8.22
790
0.190
open
open
-
GND
VDIG
HMC757
7
8.11
395
0.380
open
open
-
GND
GND
HMC757LP4E
5
6.12
400
0.375
open
open
-
GND
GND
HMC863
6
7.05
375
0.400
open
open
-
GND
GND
HMC863LP4E
6
7.05
375
0.400
open
open
-
GND
GND
HMC864
6
7.16
750
0.200
open
open
-
GND
VDIG
HMC906
6
7.02
1200
0.125
open
open
-
VDIG
GND
5.5
6.52
1200
0.125
open
open
-
VDIG
GND
HMC949
7
8.02
1200
0.125
open
open
-
VDIG
GND
HMC965LP5E
6
7.02
1200
0.125
open
open
-
VDIG
GND
HMC968
6
6.77
900
0.167
open
open
-
VDIG
GND
HMC969
6
6.77
900
0.167
open
open
-
VDIG
GND
HMC943LP5E
13
BIAS CONTROLLERS - SMT
Hittite Part Number
Wideband (Distributed)
HMC-AUH232
5
5.50
180
0.833
5.18
5
1.5
GND
GND
HMC-AUH249
5
5.56
200
0.750
5.07
5
1.5
GND
GND
HMC-AUH312
8
8.17
60
2.500
3.06
5
1.8
GND
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 20
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Table 3 - List of Bias Settings for Various Hittite Amplifiers (Continued)
Hittite Part Number
BIAS CONTROLLERS - SMT
13
13 - 21
VDRAIN
(V)
VDD
(V)
IDRAIN
(mA)
RSENSE
(kOhm)
R4
(kOhm)
R3
(kOhm)
VG2
(V)
S1
S0
HMC460
8
8.17
60
2.500
open
open
-
GND
GND
HMC460LC5
8
8.21
75
2.000
open
open
-
GND
GND
HMC463
5
5.17
60
2.500
open
open
-
GND
GND
HMC463LH250
5
5.17
60
2.500
open
open
-
GND
GND
HMC463LP5
5
5.17
60
2.500
open
open
-
GND
GND
HMC465
8
8.45
160
0.938
2.48
5
1.5
GND
GND
HMC465LP5
8
8.45
160
0.938
2.48
5
1.5
GND
GND
HMC562
8
8.22
80
1.875
open
open
-
GND
GND
HMC633
5
5.50
180
0.833
open
open
-
GND
GND
HMC633LC4
5
5.50
180
0.833
open
open
-
GND
GND
HMC634
5
5.50
180
0.833
open
open
-
GND
GND
HMC634LC4
5
5.50
180
0.833
open
open
-
GND
GND
HMC-930
10
10.49
175
0.857
4.22
5
3.5
GND
GND
HMC-459
8
8.81
290
0.517
4.77
5
3
GND
GND
HMC-464
8
8.81
290
0.517
4.77
5
3
GND
GND
HMC464LP5 /
HMC464LP5E
8
8.81
290
0.517
4.77
5
3
GND
GND
HMC559
10
11.12
400
0.375
4.55
5
4
GND
GND
HMC619
12
12.84
300
0.500
4.82
5
5
GND
GND
HMC619LP5 /
HMC619LP5E
12
12.84
300
0.500
4.82
5
5
GND
GND
HMC635
5
5.78
280
0.536
open
open
-
GND
GND
HMC635LC4
5
5.78
280
0.536
open
open
-
GND
GND
HMC637
12
13.12
400
0.375
6.27
5
6
GND
GND
HMC637LP5 /
HMC637LP5E
12
13.12
400
0.375
4.62
5
5
GND
GND
HMC659
8
8.84
300
0.500
4.74
5
3
GND
GND
HMC659LC5
8
8.84
300
0.500
4.74
5
3
GND
GND
HMC797
10
11.12
400
0.375
3.80
5
3.5
GND
GND
HMC797LP5E
10
11.12
400
0.375
3.80
5
3.5
GND
GND
Microwave & Optical Drivers
HMC870LC5
7
7.46
165
0.909
open
open
-
GND
GND
HMC871LC5
8
8.21
75
2.000
open
open
-
GND
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER
HIGH CURRENT
Notes:
BIAS CONTROLLERS - SMT
13
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 22
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