LRC MMBV109LT1 Silicon epicap diode Datasheet

LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
MMBV109LT1
MBV109T1
MV209
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
ANODE
3
CATHODE
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
MMBV109LT1
30
200
MBV109T1
Reverse Voltage
Forward Current
Device Dissipation
@T A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
VR
IF
PD
280
2.8
Unit
MV209
Vdc
mAdc
200
2.0
+125
–55 to +150
TJ
T stg
200
1.6
mW
mW/°C
°C
°C
DEVICEMARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
( I R = 10 µ Adc)
Reverse Voltage Leakage Current
( V R = 25Vdc)
Diode Capacitance Temperature Coefficient
(V R = 3.0 Vdc, f = 1.0 MHz)
Symbol
Min
Typ
Max
Unit
V (BR)R
30
—
—
Vdc
IR
—
—
0.1
mAdc
TC C
—
300
—
ppm/°C
C T Diode Capacitance
VR =3.0Vdc, f =1.0MHz
pF
Q, Figure of
Merit
V R = 3.0Vdc
f = 50MHz
CR, Capacitance
Ratio
C3 / C 25
f=1.0MHz (Note 1)
Device Type
Min
Nom
Max
Min
Min
Max
MBV109T1, MMBV109LT1, MV209
26
29
32
200
5.0
6.5
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
MBV109. MMBV109*. MV209*–1/2
LESHAN RADIO COMPANY, LTD.
MBV109T1 MMBV109LT1 MV209
1000
40
36
Q , FIGURE OF MERIT
C T , CAPACITANCE (pF)
32
28
24
20
16
12
8
4
10
0
1
3
10
30
1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
CT,DIODECAPACITANCE(NORMALIZED)
V R , REVERSE VOLTAGE (VOLTS)
2.0
1.0
0.2
0.1
0.02
0.01
–60
100
Figure 1. Diode Capacitance
20
10
0.002
0.001
10
100
100
I R , REVERSE CURRENT (nA)
100
–40
–20
0
20
40
60
80
100
120
140
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75
–50
–25
0
+25
+50
+75
+100
T A , AMBIENT TEMPERATURE (°C)
T A , AMBIENT TEMPERATURE (°C)
Figure 3 . Leakage Current
Figure 4. Diode Capacitance
+125
NOTES ON TESTING AND SPECIFICATIONS
1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc.
MBV109. MMBV109*. MV209*–2/2
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