Cypress CY7C1480V33-250BZXC 72-mbit (2m x 36/4m x 18/1m x 72) pipelined sync sram Datasheet

CY7C1480V33
CY7C1482V33
CY7C1486V33
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined Sync SRAM
Functional Description[1]
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V/3.3V I/O operation
• Fast clock-to-output times
— 3.0 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• CY7C1480V33, CY7C1482V33 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1486V33
available in lead-free and non-lead-free 209 ball FBGA
package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
The CY7C1480V33/CY7C1482V33/CY7C1486V33 SRAM
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 operates
from a +3.3V core power supply while all outputs may operate
with either a +2.5 or +3.3V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
Selection Guide
250 MHz
200 MHz
167 MHz
Unit
Maximum Access Time
3.0
3.0
3.4
ns
Maximum Operating Current
500
500
450
mA
Maximum CMOS Standby Current
120
120
120
mA
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05283 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 24, 2006
[+] Feedback
CY7C1480V33
CY7C1482V33
CY7C1486V33
1
Logic Block Diagram – CY7C1480V33 (2M x 36)
A0, A1, A
ADDRESS
REGISTER
2
A[1:0]
MODE
ADV
CLK
Q1
BURST
COUNTER
CLR AND Q0
LOGIC
ADSC
ADSP
BWD
DQD ,DQPD
BYTE
WRITE REGISTER
DQD ,DQPD
BYTE
WRITE DRIVER
BWC
DQC ,DQPC
BYTE
WRITE REGISTER
DQC ,DQPC
BYTE
WRITE DRIVER
DQB ,DQPB
BYTE
WRITE REGISTER
DQB ,DQPB
BYTE
WRITE DRIVER
BWB
BWA
BWE
GW
CE1
CE2
CE3
OE
ZZ
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQPA
DQPB
DQPC
DQPD
DQA ,DQPA
BYTE
WRITE DRIVER
DQA ,DQPA
BYTE
WRITE REGISTER
ENABLE
REGISTER
MEMORY
ARRAY
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
CONTROL
2
Logic Block Diagram – CY7C1482V33 (4M x 18)
A0, A1, A
ADDRESS
REGISTER
2 A[1:0]
MODE
BURST Q1
COUNTER AND
LOGIC
CLR
Q0
ADV
CLK
ADSC
ADSP
BWB
DQB,DQPB
WRITE DRIVER
DQB,DQPB
WRITE REGISTER
MEMORY
ARRAY
BWA
DQA,DQPA
WRITE DRIVER
DQA,DQPA
WRITE REGISTER
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
DQs
DQPA
DQPB
E
BWE
GW
CE1
CE2
CE3
ENABLE
REGISTER
PIPELINED
ENABLE
INPUT
REGISTERS
OE
ZZ
SLEEP
CONTROL
Document #: 38-05283 Rev. *G
Page 2 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Logic Block Diagram – CY7C1486V33 (1M x 72)
ADDRESS
REGISTER
A0, A1,A
A[1:0]
MODE
Q1
BINARY
COUNTER
CLR
Q0
ADV
CLK
ADSC
ADSP
BWH
DQH, DQPH
WRITE DRIVER
DQH, DQPH
WRITE DRIVER
BWG
DQF, DQPF
WRITE DRIVER
DQG, DQPG
WRITE DRIVER
BWF
DQF, DQPF
WRITE DRIVER
DQF, DQPF
WRITE DRIVER
BWE
DQE, DQPE
WRITE DRIVER
DQ
E, DQP
BYTE
“a”E
WRITE DRIVER
BWD
DQD, DQPD
WRITE DRIVER
DQD, DQPD
WRITE DRIVER
BWC
DQC, DQPC
WRITE DRIVER
DQC, DQPC
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
BWB
BWA
BWE
ENABLE
REGISTER
OUTPUT
BUFFERS
E
DQA, DQPA
WRITE DRIVER
DQA, DQPA
WRITE DRIVER
GW
CE1
CE2
CE3
OE
ZZ
DQB, DQPB
WRITE DRIVER
DQB, DQPB
WRITE DRIVER
OUTPUT
REGISTERS
PIPELINED
ENABLE
INPUT
REGISTERS
DQs
DQPA
DQPB
DQPC
DQPD
DQPE
DQPF
DQPG
DQPH
SLEEP
CONTROL
Document #: 38-05283 Rev. *G
Page 3 of 31
[+] Feedback
CY7C1480V33
CY7C1482V33
CY7C1486V33
Pin Configurations
NC
NC
NC
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
CY7C1482V33
(4M x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
Document #: 38-05283 Rev. *G
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
MODE
A
A
A
A
A1
A0
A
A
VSS
VDD
CY7C1480V33
(2M x 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
A
A
VSS
VDD
DQPC
DQC
DQc
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
NC
NC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-pin TQFP Pinout
Page 4 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Pin Configurations (continued)
165-ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1480V33 (2M x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
R
2
A
3
4
5
6
7
8
9
10
11
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC
NC/144M
A
CE2
BWD
BWA
CLK
GW
A
NC/576M
NC
DQC
VDDQ
VSS
VSS
VSS
VSS
VSS
VSS
VDDQ
VDDQ
VSS
VDD
OE
VSS
VDD
ADSP
DQPC
DQC
VDDQ
NC/1G
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
NC
DQD
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
DQB
DQB
DQC
NC
DQD
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
A
A
A
TDI
A1
TDO
A
A
A
A
MODE
A
A
A
TMS
TCK
A
A
A
A
A0
CY7C1482V33 (4M x 18)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
BWB
NC
CE3
ADSC
OE
ADV
ADSP
A
A
R
NC/144M
A
CE1
CE2
NC
BWA
CLK
BWE
GW
NC
NC
NC
DQB
VDDQ
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
NC/1G
NC
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
NC
NC
DQB
DQB
NC
NC
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
NC
NC
DQA
DQA
ZZ
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
DQPB
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC
A
A
A
TDI
A1
TDO
A
A
A
A
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
Document #: 38-05283 Rev. *G
A
NC/576M
DQPA
DQA
Page 5 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Pin Configurations (continued)
209-ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1486V33 (1M × 72)
1
2
3
4
5
6
7
8
9
10
11
A
DQG
DQG
A
CE2
ADSP
ADSC
ADV
CE3
A
DQB
DQB
B
DQG
DQG
BWSC
BWSG NC/288M
BWE
A
BWSB
BWSF
DQB
DQB
C
DQG
DQG
BWSH
BWSD NC/144M
CE1
NC/576M BWSE
BWSA
DQB
DQB
D
DQG
DQG
VSS
NC
NC/1G
OE
GW
NC
VSS
DQB
DQB
E
DQPG
DQPC
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPF
DQPB
F
DQC
DQC
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQF
DQF
G
DQC
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQF
DQF
VSS
NC
VSS
VSS
VSS
DQF
DQF
VDD
NC
VDD
VDDQ
VDDQ
DQF
DQF
VSS
NC
NC
NC
NC
DQC
H
DQC
DQC
VSS
VSS
J
DQC
DQC
VDDQ
VDDQ
K
NC
L
DQH
M
NC
CLK
NC
VSS
VSS
DQH
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQA
DQA
DQH
DQH
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQA
DQA
N
DQH
DQH
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQA
DQA
P
DQH
DQH
VSS
VSS
ZZ
VSS
VSS
VSS
DQA
DQA
R
DQPD
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPA
T
DQD
DQD
VSS
NC
NC
NC
NC
VSS
DQE
DQE
U
DQD
DQD
A
A
A
A
A
A
A
DQE
DQE
V
DQD
DQD
A
A
A
A1
A
A
A
DQE
DQE
W
DQD
DQD
TMS
TDI
A
A0
A
TCK
DQE
DQE
VSS
DQPH VDDQ
Document #: 38-05283 Rev. *G
MODE
TDO
DQPE
Page 6 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Pin Definitions
Pin Name
I/O
Description
A0, A1, A
InputSynchronous
Address Inputs used to select one of the address locations. Sampled at the rising
edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled
active. A1: A0 are fed to the two-bit counter.
BWA,BWB,BWC,BWD,
BWE,BWF,BWG,BWH
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to
the SRAM. Sampled on the rising edge of CLK.
GW
InputSynchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge of
CLK, a global write is conducted (ALL bytes are written, regardless of the values on
BWX and BWE).
BWE
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal
must be asserted LOW to conduct a byte write.
CLK
InputClock
CE1
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is
HIGH. CE1 is sampled only when a new external address is loaded.
CE2
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select/deselect the device. CE2 is sampled only when
a new external address is loaded.
CE3
InputSynchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select/deselect the device. CE3 is sampled only when
a new external address is loaded.
OE
InputOutput Enable, asynchronous input, active LOW. Controls the direction of the I/O
Asynchronous pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are
tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle
when emerging from a deselected state.
ADV
InputSynchronous
Advance Input signal, sampled on the rising edge of CLK, active LOW. When
asserted, it automatically increments the address in a burst cycle.
ADSP
InputSynchronous
Address Strobe from Processor, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are
both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted
HIGH.
ADSC
InputSynchronous
Address Strobe from Controller, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are
both asserted, only ADSP is recognized.
ZZ
InputZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a
Asynchronous non-time-critical “sleep” condition with data integrity preserved. For normal operation,
this pin has to be LOW or left floating. ZZ pin has an internal pull-down.
DQs, DQPs
I/OSynchronous
VDD
Power Supply Power supply inputs to the core of the device.
VSS
Ground
Clock Input. Used to capture all synchronous inputs to the device. Also used to
increment the burst counter when ADV is asserted LOW, during a burst operation.
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise
of the read cycle. The direction of the pins is controlled by OE. When OE is asserted
LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state
condition.
Ground for the core of the device.
VSSQ
I/O Ground
Ground for the I/O circuitry.
VDDQ
I/O Power
Supply
Power supply for the I/O circuitry.
Document #: 38-05283 Rev. *G
Page 7 of 31
[+] Feedback
CY7C1480V33
CY7C1482V33
CY7C1486V33
Pin Definitions (continued)
Pin Name
I/O
Description
Input Static
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to
VDD or left floating selects interleaved burst sequence. This is a strap pin and should
remain static during device operation. Mode Pin has an internal pull-up.
TDO
JTAG Serial
Output
Synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
JTAG feature is not being utilized, this pin should be disconnected. This pin is not
available on TQFP packages.
TDI
JTAG Serial
Input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not being utilized, this pin can be disconnected or connected to VDD. This pin
is not available on TQFP packages.
TMS
JTAG Serial
Input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not being utilized, this pin can be disconnected or connected to VDD. This pin
is not available on TQFP packages.
TCK
JTAG Clock
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin
must be connected to VSS. This pin is not available on TQFP packages.
NC
-
MODE
No Connects. Not internally connected to the die. 144M,288M, 576M and 1G are
address expansion pins and are not internally connected to the die.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 3.0 ns
(250-MHz device).
The CY7C1480V33/CY7C1482V33/CY7C1486V33 supports
secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports
Pentium and i486™ processors. The linear burst sequence is
suited for processors that utilize a linear burst sequence. The
burst order is user selectable, and is determined by sampling
the MODE input. Accesses can be initiated with either the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all Byte Write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3 are all asserted active, and (3) the Write
signals (GW, BWE) are all deasserted HIGH. ADSP is ignored
if CE1 is HIGH. The address presented to the address inputs
(A) is stored into the address advancement logic and the
Address Register while being presented to the memory array.
The corresponding data is allowed to propagate to the input of
the Output Registers. At the rising edge of the next clock the
Document #: 38-05283 Rev. *G
data is allowed to propagate through the output register and
onto the data bus within 3.0 ns (250-MHz device) if OE is
active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state, its
outputs are always tri-stated during the first cycle of the
access. After the first cycle of the access, the outputs are
controlled by the OE signal. Consecutive single Read cycles
are supported. Once the SRAM is deselected at clock rise by
the chip select and either ADSP or ADSC signals, its output
will tri-state immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3 are all asserted active. The address
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The Write signals (GW, BWE, and BWX) and
ADV inputs are ignored during this first cycle.
ADSP-triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH,
then the Write operation is controlled by BWE and BWX
signals.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 provides
Byte Write capability that is described in the Write Cycle
Descriptions table. Asserting the Byte Write Enable input
(BWE) with the selected Byte Write (BWX) input, will selectively write to only the desired bytes. Bytes not selected during
a Byte Write operation will remain unaltered. A synchronous
self-timed Write mechanism has been provided to simplify the
Write operations.
Because CY7C1480V33/CY7C1482V33/CY7C1486V33 is a
common I/O device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so will tri-state the output drivers. As a safety
precaution, DQs are automatically tri-stated whenever a Write
cycle is detected, regardless of the state of OE.
Page 8 of 31
[+] Feedback
CY7C1480V33
CY7C1482V33
CY7C1486V33
Single Write Accesses Initiated by ADSC
Sleep Mode
ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active,
and (4) the appropriate combination of the Write inputs (GW,
BWE, and BWX) are asserted active to conduct a Write to the
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV input is ignored during this cycle. If a global Write is
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a Byte
Write is conducted, only the selected bytes are written. Bytes
not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
Because CY7C1480V33/CY7C1482V33/CY7C1486V33 is a
common I/O device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so will tri-state the output drivers. As a safety
precaution, DQs are automatically tri-stated whenever a Write
cycle is detected, regardless of the state of OE.
Burst Sequences
The CY7C1480V33/CY7C1482V33/CY7C1486V33 provides
a two-bit wraparound counter, fed by A1: A0, that implements
either an interleaved or linear burst sequence. The interleaved
burst sequence is designed specifically to support Intel
Pentium applications. The linear burst sequence is designed
to support processors that follow a linear burst sequence. The
burst sequence is user selectable through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Fourth
Address
A1: A0
Linear Burst Address Table
(MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
IDDZZ
Sleep mode standby current
Test Conditions
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ Active to Sleep current
This parameter is sampled
tRZZI
ZZ Inactive to exit Sleep current
This parameter is sampled
Document #: 38-05283 Rev. *G
Min.
ZZ > VDD – 0.2V
Max.
Unit
120
mA
2tCYC
ns
2tCYC
ns
2tCYC
0
ns
ns
Page 9 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Truth Table[2, 3, 4, 5, 6]
Add. Used
CE1
CE2
CE3
ZZ
ADSP
ADSC
ADV
Deselect Cycle, Power Down
Operation
None
H
X
X
L
X
L
X
WRITE OE CLK
X
X
L-H Tri-State
DQ
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L-H Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L-H Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L-H Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L-H Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H Tri-State
WRITE Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H Tri-State
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H Tri-State
Q
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H Tri-State
Q
WRITE Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H Tri-State
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H Tri-State
WRITE Cycle,Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle,Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Q
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05283 Rev. *G
Page 10 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Truth Table for Read/Write[4]
GW
BWE
BWD
BWC
BWB
BWA
Read
Function (CY7C1480V33)
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A – (DQA and DQPA)
H
L
H
H
H
L
Write Byte B – (DQB and DQPB)
Write Bytes B, A
H
L
H
H
L
H
H
L
H
H
L
L
Write Byte C – (DQC and DQPC)
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D – (DQD and DQPD)
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Truth Table for Read/Write[4]
GW
BWE
BWB
BWA
Read
Function (CY7C1482V33)
H
H
X
X
Read
H
L
H
H
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
H
L
H
L
H
L
L
H
Write Bytes B, A
H
L
L
L
Write All Bytes
H
L
L
L
Write All Bytes
L
X
X
X
Truth Table for Read/Write[7]
Function (CY7C1486V33)
Read
GW
H
BWE
H
BWX
X
Read
H
L
All BW = H
Write Byte x – (DQx and DQPx)
H
L
L
Write All Bytes
H
L
All BW = L
Write All Bytes
L
X
X
Note:
7. BWx represents any byte write signal BW[0..7].To enable any byte write BWx, a Logic LOW signal should be applied at clock rise.Any number of bye writes can
be enabled at the same time for any given write.
Document #: 38-05283 Rev. *G
Page 11 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test MODE SELECT (TMS)
The CY7C1480V33/CY7C1482V33/CY7C1486V33 incorporates a serial boundary scan test access port (TAP). This port
operates in accordance with IEEE Standard 1149.1-1990 but
does not have the set of functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because their inclusion places an added delay in the
critical speed path of the SRAM. Note that the TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC-standard 3.3V or 2.5V I/O logic levels.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 contains
a TAP controller, instruction register, boundary scan register,
bypass register, and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should be
left unconnected. Upon power-up, the device will come up in
a reset state which will not interfere with the operation of the
device.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
(See Tap Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
TAP Controller Block Diagram
TAP Controller State Diagram
1
0
Bypass Register
TEST-LOGIC
RESET
2 1 0
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCAN
1
SELECT
IR-SCAN
0
1
1
CAPTURE-DR
0
Selection
Circuitry
TDO
Identification Register
CAPTURE-IR
x . . . . . 2 1 0
SHIFT-IR
1
Instruction Register
31 30 29 . . . 2 1 0
0
SHIFT-DR
0
Boundary Scan Register
1
EXIT1-DR
1
EXIT1-IR
0
1
TCK
0
PAUSE-DR
0
PAUSE-IR
1
0
TMS
TAP CONTROLLER
1
EXIT2-DR
0
EXIT2-IR
1
Performing a TAP Reset
1
UPDATE-DR
1
TDI
Selection
Circuitry
0
0
0
1
0
UPDATE-IR
1
0
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Document #: 38-05283 Rev. *G
A RESET is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating.
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Page 12 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the Tap Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test data path.
Bypass Register
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
Boundary Scan Register
IDCODE
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The x36 configuration has a
73-bit-long register, and the x18 configuration has a
54-bit-long register.
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the I/O ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Overview
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Codes table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the I/O
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; rather, it performs a capture of the I/O
ring when these instructions are executed.
Document #: 38-05283 Rev. *G
The IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a test
logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 10 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture set-up plus
hold time (tCS plus tCH).
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
Page 13 of 31
[+] Feedback
CY7C1480V33
CY7C1482V33
CY7C1486V33
BYPASS
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction will have the
same effect as the Pause-DR command.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
Test Clock
(TCK)
3
t TH
t TMSS
t TMSH
t TDIS
t TDIH
t
TL
4
5
6
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range[8, 9]
Parameter
Description
Min.
Max.
Unit
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH time
20
ns
tTL
TCK Clock LOW time
20
ns
50
ns
20
MHz
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
Set-up Times
tTMSS
TMS Set-up to TCK Clock Rise
5
ns
tTDIS
TDI Set-up to TCK Clock Rise
5
ns
tCS
Capture Set-up to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
Notes:
8. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
9. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document #: 38-05283 Rev. *G
Page 14 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels ............................................... .VSS to 3.3V
Input pulse levels................................................. VSS to 2.5V
Input rise and fall times ................................................... 1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels ...........................................1.5V
Input timing reference levels......................................... 1.25V
Output reference levels...................................................1.5V
Output reference levels ................................................ 1.25V
Test load termination supply voltage...............................1.5V
Test load termination supply voltage ............................ 1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.25V
1.5V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 3.135 to 3.6V unless otherwise noted)[10]
Parameter
VOH1
VOH2
VOL1
VOL2
VIH
VIL
IX
Description
Test Conditions
Min.
Max.
Unit
Output HIGH Voltage IOH = –4.0 mA, VDDQ = 3.3V
2.4
V
IOH = –1.0 mA, VDDQ = 2.5V
2.0
V
VDDQ = 3.3V
2.9
V
VDDQ = 2.5V
2.1
V
Output HIGH Voltage IOH = –100 µA
Output LOW Voltage
Output LOW Voltage
IOL = 8.0 mA
VDDQ = 3.3V
0.4
V
IOL = 1.0 mA
VDDQ = 2.5V
0.4
V
VDDQ = 3.3V
0.2
V
VDDQ = 2.5V
0.2
V
IOL = 100 µA
Input HIGH Voltage
Input LOW Voltage
Input Load Current
VDDQ = 3.3V
2.0
VDD + 0.3
V
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
GND < VIN < VDDQ
Identification Register Definitions
Instruction Field
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
CY7C1480V33 CY7C1482V33 CY7C1486V33
(2M x36)
(4M x 18)
(1M x72)
000
000
000
Description
Describes the version number
01011
01011
01011
000000
000000
000000
Defines memory type and architecture
110100
Defines width and density
100100
010100
00000110100
00000110100
1
1
Reserved for internal use
00000110100 Allows unique identification of SRAM
vendor
1
Indicates the presence of an ID register
Notes:
10. All voltages referenced to VSS (GND).
11. Bit #24 is “1” in the ID Register Definitions for both 2.5V and 3.3V versions of this device.
Document #: 38-05283 Rev. *G
Page 15 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Bit Size (x72)
Instruction
3
3
3
Bypass
1
1
1
ID
32
32
32
Boundary Scan Order-165FBGA
73
54
-
-
-
112
Boundary Scan Order-209BGA
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures the I/O ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Boundary Scan Exit Order (2M x 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C1
21
R3
41
L10
61
B8
2
D1
22
P2
42
K11
62
A7
3
E1
23
R4
43
J11
63
B7
4
D2
24
P6
44
K10
64
B6
5
E2
25
R6
45
J10
65
A6
6
F1
26
N6
46
H11
66
B5
7
G1
27
P11
47
G11
67
A5
8
F2
28
R8
48
F11
68
A4
9
G2
29
P3
49
E11
69
B4
10
J1
30
P4
50
D10
70
B3
11
K1
31
P8
51
D11
71
A3
12
L1
32
P9
52
C11
72
A2
73
B2
13
J2
33
P10
53
G10
14
M1
34
R9
54
F10
15
N1
35
R10
55
E10
16
K2
36
R11
56
A10
17
L2
37
N11
57
B10
18
M2
38
M11
58
A9
19
R1
39
L11
59
B9
20
R2
40
M10
60
A8
Document #: 38-05283 Rev. *G
Page 16 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Boundary Scan Exit Order (4M x 18)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
D2
19
R8
37
C11
2
E2
20
P3
38
A11
3
F2
21
P4
39
A10
4
G2
22
P8
40
B10
5
J1
23
P9
41
A9
6
K1
24
P10
42
B9
7
L1
25
R9
43
A8
8
M1
26
R10
44
B8
9
N1
27
R11
45
A7
10
R1
28
M10
46
B7
11
R2
29
L10
47
B6
12
R3
30
K10
48
A6
13
P2
31
J10
49
B5
14
R4
32
H11
50
A4
15
P6
33
G11
51
B3
16
R6
34
F11
52
A3
17
N6
35
E11
53
A2
18
P11
36
D11
54
B2
Document #: 38-05283 Rev. *G
Page 17 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Boundary Scan Exit Order (1M x 72)
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
1
A1
29
T1
57
V10
85
C11
2
A2
30
T2
58
U11
86
C10
3
B1
31
U1
59
U10
87
B11
4
B2
32
U2
60
T11
88
B10
5
C1
33
V1
61
T10
89
A11
6
C2
34
V2
62
R11
90
A10
7
D1
35
W1
63
R10
91
A9
8
D2
36
W2
64
P11
92
U8
9
E1
37
T6
65
P10
93
A7
10
E2
38
V3
66
N11
94
A5
11
F1
39
V4
67
N10
95
A6
12
F2
40
U4
68
M11
96
D6
13
G1
41
W5
69
M10
97
B6
14
G2
42
V6
70
L11
98
D7
15
H1
43
W6
71
L10
99
K3
16
H2
44
U3
72
P6
100
A8
17
J1
45
U9
73
J11
101
B4
18
J2
46
V5
74
J10
102
B3
19
L1
47
U5
75
H11
103
C3
20
L2
48
U6
76
H10
104
C4
21
M1
49
W7
77
G11
105
C8
22
M2
50
V7
78
G10
106
C9
23
N1
51
U7
79
F11
107
B9
24
N2
52
V8
80
F10
108
B8
25
P1
53
V9
81
E10
109
A4
26
P2
54
W11
82
E11
110
C6
27
R2
55
W10
83
D11
111
B7
28
R1
56
V11
84
D10
112
A3
Document #: 38-05283 Rev. *G
Page 18 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Maximum Ratings
DC Input Voltage ................................... –0.5V to VDD + 0.5V
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015Latch-up Current. >200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.3V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.3V to +VDD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Ambient
Range
Temperature
VDD
VDDQ
Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V – 5%
to VDD
Industrial
–40°C to +85°C
Electrical Characteristics Over the Operating Range[12, 13]
Parameter
Description
Test Conditions
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage[12]
VIL
Input LOW Voltage[12]
IX
Input Leakage Current
except ZZ and MODE
GND ≤ VI ≤ VDDQ
Min.
3.135
3.6
V
3.135
VDD
V
for 2.5V I/O
2.375
2.625
V
for 3.3V I/O, IOH = –4.0 mA
2.4
for 2.5V I/O, IOH = –1.0 mA
2.0
for 3.3V I/O, IOL = 8.0 mA
V
V
0.4
V
0.4
V
2.0
VDD + 0.3V
V
for 2.5V I/O
1.7
VDD + 0.3V
V
for 3.3V I/O
–0.3
0.8
V
for 2.5V I/O
–0.3
0.7
V
–5
5
µA
for 3.3V I/O
µA
–30
Input Current of MODE Input = VSS
Input = VDD
5
Input = VSS
µA
µA
–5
30
µA
5
µA
4.0-ns cycle, 250 MHz
500
mA
5.0-ns cycle, 200 MHz
500
mA
6.0-ns cycle, 167 MHz
450
mA
4.0-ns cycle, 250 MHz
245
mA
5.0-ns cycle, 200 MHz
245
mA
6.0-ns cycle, 167 MHz
245
mA
Input = VDD
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
ISB1
Unit
for 3.3V I/O
for 2.5V I/O, IOL = 1.0 mA
Input Current of ZZ
Max.
–5
ISB2
Automatic CE
VDD = Max, Device Deselected, All speeds
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs f = 0
120
mA
ISB3
Automatic CE
VDD = Max, Device Deselected, or 4.0-ns cycle, 250 MHz
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V 5.0-ns cycle, 200 MHz
Current—CMOS Inputs f = fMAX = 1/tCYC
6.0-ns cycle, 167 MHz
245
mA
245
mA
245
mA
Automatic CE
Power-down
Current—TTL Inputs
135
mA
ISB4
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
All speeds
Notes:
12. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
13. Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05283 Rev. *G
Page 19 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Capacitance[14]
Description
Test Conditions
100 TQFP
Max.
CADDRESS
Address Input Capacitance
6
6
pF
Data Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V
VDDQ = 2.5V
6
CDATA
5
5
5
pF
Parameter
165 FBGA
Max.
209 FBGA
Max.
Unit
CCTRL
Control Input Capacitance
8
8
8
pF
CCLK
Clock Input Capacitance
6
6
6
pF
CI/O
Input/Output Capacitance
5
5
5
pF
100 TQFP
Package
165 FBGA
Package
209 FBGA
Package
Unit
24.63
16.3
15.2
°C/W
2.28
2.1
1.7
°C/W
Thermal Resistance[14]]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per
EIA/JESD51.
AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317Ω
3.3V
OUTPUT
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
Z0 = 50Ω
10%
90%
10%
90%
GND
5 pF
R = 351Ω
≤ 1 ns
≤ 1 ns
VL = 1.5V
INCLUDING
JIG AND
SCOPE
(a)
(c)
(b)
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
Z0 = 50Ω
10%
R = 1538Ω
VL = 1.25V
INCLUDING
JIG AND
SCOPE
90%
10%
90%
GND
5 pF
(a)
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
(b)
≤ 1 ns
≤ 1 ns
(c)
Note:
14. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05283 Rev. *G
Page 20 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Switching Characteristics Over the Operating Range[19, 20]
250 MHz
Parameter
tPOWER
Description
Min.
[15]
VDD(Typical) to the first access
Max.
200 MHz
Min.
Max.
167 MHz
Min.
Max.
Unit
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.0
5.0
6.0
ns
tCH
Clock HIGH
2.0
2.0
2.4
ns
tCL
Clock LOW
2.0
2.0
2.4
ns
Output Times
tCO
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
[16, 17, 18]
3.0
1.3
3.0
1.3
1.5
ns
Clock to Low-Z
tCHZ
Clock to High-Z[16, 17, 18]
3.0
3.0
3.4
ns
tOEV
OE LOW to Output Valid
3.0
3.0
3.4
ns
tOELZ
tOEHZ
OE LOW to Output
OE HIGH to Output
High-Z[16, 17, 18]
1.3
ns
tCLZ
Low-Z[16, 17, 18]
1.3
3.4
0
1.5
0
3.0
ns
0
3.0
ns
3.4
ns
Set-up Times
tAS
Address Set-up Before CLK Rise
1.4
1.4
1.5
ns
tADS
ADSC, ADSP Set-up Before CLK Rise
1.4
1.4
1.5
ns
tADVS
ADV Set-up Before CLK Rise
1.4
1.4
1.5
ns
tWES
GW, BWE, BWX Set-up Before CLK Rise
1.4
1.4
1.5
ns
tDS
Data Input Set-up Before CLK Rise
1.4
1.4
1.5
ns
tCES
Chip Enable Set-Up Before CLK Rise
1.4
1.4
1.5
ns
tAH
Address Hold After CLK Rise
0.4
0.4
0.5
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.4
0.4
0.5
ns
tADVH
ADV Hold After CLK Rise
0.4
0.4
0.5
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.4
0.4
0.5
ns
tDH
Data Input Hold After CLK Rise
0.4
0.4
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.4
0.4
0.5
ns
Hold Times
Notes:
15. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
16. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
17. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
18. This parameter is sampled and not 100% tested.
19. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
20. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05283 Rev. *G
Page 21 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Switching Waveforms
Read Cycle Timing[21]
t CYC
CLK
t
CH
t
ADS
t
CL
t
ADH
ADSP
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
tWES
A3
Burst continued with
new base address
tWEH
GW, BWE,
BWx
tCES
Deselect
cycle
tCEH
CE
tADVS tADVH
ADV
ADV
suspends
burst.
OE
t OEHZ
t CLZ
Data Out (Q)
Q(A1)
High-Z
tOEV
tCO
t OELZ
tDOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
t CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note:
21. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05283 Rev. *G
Page 22 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Switching Waveforms (continued)
Write Cycle Timing[21, 22]
t CYC
CLK
tCH
tADS
tCL
tADH
ADSP
tADS
ADSC extends burst
tADH
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
tWES tWEH
BWE,
BWX
tWES tWEH
GW
tCES
tCEH
CE
t
t
ADVS ADVH
ADV
ADV suspends burst
OE
tDS
Data In (D)
High-Z
t
OEHZ
tDH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Note:
22. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05283 Rev. *G
Page 23 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Switching Waveforms (continued)
Read/Write Cycle Timing[21, 23, 24]
tCYC
CLK
tCL
tCH
tADS
tADH
tAS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
D(A5)
D(A6)
tWES tWEH
BWE,
BWX
tCES
tCEH
CE
ADV
OE
tDS
tCO
tDH
tOELZ
Data In (D)
High-Z
tCLZ
Data Out (Q)
High-Z
Q(A1)
Back-to-Back READs
tOEHZ
D(A3)
Q(A2)
Q(A4)
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
DON’T CARE
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes:
23. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
24. GW is HIGH.
Document #: 38-05283 Rev. *G
Page 24 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Switching Waveforms (continued)
ZZ Mode Timing[25, 26]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes:
25. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
26. DQs are in high-Z when exiting ZZ sleep mode
Document #: 38-05283 Rev. *G
Page 25 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
167
Ordering Code
CY7C1480V33-167AXC
Package
Diagram
Operating
Range
Part and Package Type
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1482V33-167AXC
CY7C1480V33-167BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1482V33-167BZC
CY7C1480V33-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1482V33-167BZXC
CY7C1486V33-167BGC
CY7C1486V33-167BGXC
CY7C1480V33-167AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
lndustrial
CY7C1482V33-167AXI
CY7C1480V33-167BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1482V33-167BZI
CY7C1480V33-167BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1482V33-167BZXI
CY7C1486V33-167BGI
CY7C1486V33-167BGXI
200
CY7C1480V33-200AXC
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1482V33-200AXC
CY7C1480V33-200BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1482V33-200BZC
CY7C1480V33-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1482V33-200BZXC
CY7C1486V33-200BGC
CY7C1486V33-200BGXC
CY7C1480V33-200AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
lndustrial
CY7C1482V33-200AXI
CY7C1480V33-200BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1482V33-200BZI
CY7C1480V33-200BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1482V33-200BZXI
CY7C1486V33-200BGI
CY7C1486V33-200BGXI
Document #: 38-05283 Rev. *G
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
Page 26 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
250
Ordering Code
CY7C1480V33-250AXC
Package
Diagram
Operating
Range
Part and Package Type
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1482V33-250AXC
CY7C1480V33-250BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1482V33-250BZC
CY7C1480V33-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1482V33-250BZXC
CY7C1486V33-250BGC
CY7C1486V33-250BGXC
CY7C1480V33-250AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
CY7C1482V33-250AXI
CY7C1480V33-250BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1482V33-250BZI
CY7C1480V33-250BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1482V33-250BZXI
CY7C1486V33-250BGI
CY7C1486V33-250BGXI
Document #: 38-05283 Rev. *G
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
Page 27 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)
16.00±0.20
1.40±0.05
14.00±0.10
100
81
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
0.10
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
Document #: 38-05283 Rev. *G
A
Page 28 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Package Diagrams (continued)
165-ball FBGA (15 x 17 x 1.4 mm) (51-85165)
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
Ø0.45±0.05(165X)
1
2
3
4
5
6
7
8
9
10
11
11
10
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
F
F
G
G
H
J
14.00
E
17.00±0.10
E
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
1.00
5.00
0.35
0.15 C
+0.05
-0.10
0.53±0.05
0.25 C
10.00
B
15.00±0.10
0.15(4X)
SEATING PLANE
1.40 MAX.
0.36
C
51-85165-*A
Document #: 38-05283 Rev. *G
Page 29 of 31
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CY7C1480V33
CY7C1482V33
CY7C1486V33
Package Diagrams (continued)
209-ball FBGA (14 x 22 x 1.76 mm) (51-85167)
51-85167-**
i486 is a trademark and Intel and Pentium are registered trademarks of Intel Corporation. All products and company names
mentioned in this document may be the trademarks of their respective holders
Document #: 38-05283 Rev. *G
Page 30 of 31
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1480V33
CY7C1482V33
CY7C1486V33
.Document History Page
Document Title: CY7C1480V33/CY7C1482V33/CY7C1486V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
Document Number: 38-05283
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
114670
08/06/02
PKS
New Data Sheet
*A
118281
01/21/03
HGK
Changed tCO from 2.4 to 2.6 ns for 250 MHz
Updated features on page 1 for package offering
Removed 30-MHz offering
Updated Ordering Information
Changed Advanced Information to Preliminary
*B
233368
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Included IDD and ISB values
Removed 250-MHz speed grade offering and included 225-MHz speed bin
Changed package outline for 165FBGA package and 209-ball BGA package
Removed 119-BGA package offering
*C
299452
See ECN
SYT
Removed 225-MHz offering and included 250-MHz speed bin
Changed tCYC from 4.4 ns to 4.0 ns for 250-MHz Speed Bin
Changed ΘJA from 16.8 to 24.63 °C/W and ΘJC from 3.3 to 2.28 °C/W for 100
TQFP Package on Page # 20
Added lead-free information for 100-Pin TQFP, 165 FBGA and 209 BGA
Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering
Information
*D
323080
See ECN
PCI
Unshaded 200 and 167 MHz speed bin in the AC/DC Table and Selection
Guide
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added Address Expansion pins in the Pin Definitions Table
Added Truth Table and Note# 7 for CY7C1486V33 on page# 11
Added Industrial Operating Range
Modified VOL, VOH test conditions
Removed comment of ‘Lead-free BG packages availability’ below the
Ordering Information
Updated Ordering Information Table
*E
416193
See ECN
NXR
Converted Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage
Current on page# 19
Changed the IX current values of MODE on page # 19 from -5 µA and 30 µA
to -30 µA and 5 µA
Changed the IX current values of ZZ on page # 19 from -30 µA and 5 µA
to -5 µA and 30 µA
Changed VIH < VDD to VIH < VDD on page # 19
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information Table
*F
470723
See ECN
VKN
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH,tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC
Switching Characteristics table
Updated the Ordering Information table
*G
486690
See ECN
VKN
Corrected the typo in the 209-Ball FBGA pinout.
(Corrected the ball name H9 to VSS from VSSQ).
Document #: 38-05283 Rev. *G
Page 31 of 31
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