IRF IRF7807PBF N channel application specific mosfet Datasheet

PD – 95290
IRF7807PbF
IRF7807APbF
HEXFET® Chip-Set for DC-DC Converters
•
•
•
•
•
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
Description
These new devices employ advanced HEXFET
Power MOSFET technology to achieve an
unprecedented balance of on-resistance and gate
charge. The reduced conduction and switching losses
make them ideal for high efficiency DC-DC
Converters that power the latest generation of mobile
microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
Device Features
IRF7807 IRF7807A
Vds
30V
30V
Rds(on) 25mΩ
25mΩ
Qg
17nC
17nC
Qsw
5.2nC
Qoss
16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
25°C
Current (VGS ≥ 4.5V)
70°C
Pulsed Drain Current
ID
IDM
25°C
±12
8.3
6.6
6.6
66
66
2.5
PD
W
TJ, TSTG
–55 to 150
°C
IS
2.5
2.5
Pulsed source Current
ISM
66
66
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A
1.6
Continuous Source Current (Body Diode)
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Units
V
8.3
70°C
Junction & Storage Temperature Range
IRF7807A
30
VGS
Continuous Drain or Source
Power Dissipation
IRF7807
VDS
RθJA
Max.
50
A
Units
°C/W
1
09/22/04
IRF7807/APbF
Electrical Characteristics
Parameter
IRF7807
Min Typ Max
IRF7807A
Min Typ Max Units
Drain-to-Source
Breakdown Voltage*
V(BR)DSS
Static Drain-Source
on Resistance*
RDS(on)
Gate Threshold Voltage*
VGS(th)
Drain-Source Leakage
Current*
IDSS
Gate-Source Leakage
Current*
IGSS
Total Gate Charge*
Qg
12
Pre-Vth
Gate-Source Charge
Q gs1
2.1
2.1
Post-Vth
Gate-Source Charge
Q gs2
0.76
0.76
Gate to Drain Charge
Qgd
2.9
2.9
Switch Charge*
(Qgs2 + Qgd)
QSW
3.66
5.2
3.66
Output Charge*
Q oss
14
16.8
14
30
–
–
17
25
1.0
30
–
–
V
VGS = 0V, ID = 250µA
17
25
mΩ
VGS = 4.5V, ID = 7A‚
V
VDS = VGS, ID = 250µA
µA
VDS = 24V, VGS = 0
1.0
30
30
150
150
±100
±100
17
Conditions
12
VDS = 24V, VGS = 0,
Tj = 100°C
nA
17
VGS = ±12V
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
nC
16.8
VDS = 16V, VGS = 0
Ω
Gate Resistance
Rg
1.2
1.2
Turn-on Delay Time
td(on)
12
12
Rise Time
tr
17
17
Turn-off Delay Time
td (off)
25
25
Rg = 2Ω
Fall Time
tf
6
6
VGS = 4.5V
Resistive Load
VDD = 16V
ns
ID = 7A
Source-Drain Rating & Characteristics
Parameter
Min
Typ Max
Min
Typ Max Units
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
80
80
Reverse Recovery
Charge (with Parallel
Schotkky)„
Notes:
Qrr(s)
50
50

‚
ƒ
„
*
2
1.2
1.2
Conditions
V
IS = 7A‚, VGS = 0V
nC
di/dt = 700A/µs
VDS = 16V, VGS = 0V, IS = 7A
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q oss
Devices are 100% tested to these parameters.
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IRF7807/APbF
Power MOSFET Selection for DC/DC
Converters
4
Drain Current
Control FET
This can be expanded and approximated by;
VGTH
t0
2
Drain Voltage
Figure 1: Typical MOSFET switching waveform
Ploss = (Irms 2 × Rds(on ) )
Synchronous FET
Qgs2
⎞ ⎛
f⎟ + ⎜ I ×
× Vin ×
ig
⎠ ⎝
⎞
f⎟
⎠
+ (Qg × Vg × f )
⎛Q
+ oss × Vin × f ⎞
⎝ 2
⎠
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source charge
that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub
elements, Qgs1 and Qgs2, can be seen from Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage
begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output
capacitance of the MOSFET during every switching
cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (non-linear)
capacitance’s Cds and Cdg when multiplied by the power
supply input buss voltage.
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t3
t1
QGD
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
⎛
Qgd
+⎜I ×
× Vin ×
ig
⎝
Gate Voltage
t2
QGS1
Power losses in the control switch Q1 are given by;
1
QGS2
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called the
Control FET, are impacted by the Rds(on) of the MOSFET,
but these conduction losses are only about one half of
the total losses.
The power loss equation for Q2 is approximated
by;
*
Ploss = Pconduction + Pdrive + Poutput
(
2
Ploss = Irms × Rds(on)
)
+ (Qg × Vg × f )
⎛Q
⎞
+ ⎜ oss × Vin × f + (Qrr × Vin × f )
⎝ 2
⎠
*dissipated primarily in Q1.
3
IRF7807/APbF
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it
impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807 can be downloaded in machine readable format at www.irf.com.
Figure 2: Qoss Characteristic
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predictions generated by the system models. An advantage
of this new technology platform is that the MOSFETs
it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and
Fig 4). In these applications the same MOSFET IRF7807
was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective
cost/performance solution.
3.3V Supply : Q1=Q2=IRF7807
5V Supply : Q1=Q2=IRF7807
93
95
92
94
90
Efficiency (%)
Efficiency (%)
91
89
88
87
Vin = 10V
86
91
90
Vin = 14V
Vin = 24V
Vin=24V
84
89
1
1.5
2
2.5
3
3.5
Load Current (A)
Figure 3
4
92
Vin = 10V
Vin = 14V
85
93
4
4.5
5
1
1.5
2
2.5
3
3.5
Load Current (A)
4
4.5
5
Figure 4
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IRF7807/APbF
Typical Characteristics
IRF7807
IRF7807A
Figure 5. Normalized On-Resistance vs. Temperature
Figure 6. Normalized On-Resistance vs. Temperature
Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage
Figure 10. Typical Rds(on) vs. Gate-to-Source Voltage
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5
IRF7807/APbF
IRF7807
IRF7807A
10
ISD , Reverse Drain Current (A)
ISD , Reverse Drain Current (A)
10
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.5
0.6
0.7
0.8
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.9
0.5
0.6
0.7
0.8
0.9
VSD ,Source-to-Drain Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Figure 11. Typical Source-Drain Diode Forward Voltage
Figure 12. Typical Source-Drain Diode Forward Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.1
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7807/APbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
6X
2
3
MIN
.0532
.0688
1.35
1.75
A1 .0040
0.25
.0098
0.10
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
A
4
e
e1
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
.013
H
0.25 [.010]
1
MAX
b
5
6
MILLIMETERS
MIN
A
E
INCHE S
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7807/APbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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