Infineon H11A1 Industry standard single channel 6 pin dip optocoupler Datasheet

PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Part No.
CTR % Min.
4N25
20
4N26
20
4N27
10
4N28
10
4N35
100
4N36
100
4N37
100
4N38
10
H11A1
50
H11A2
20
H11A3
20
H11A4
10
H11A5
30
Dimensions in Inches (mm)
Part No.
MCT2
MCT2E
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
CTR % Min.
20
20
50
45–90
75–150
125–250
225–400
70–90
15–60
100
FEATURES
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS®
• 5300 VRMS Isolation Test Voltage
• Underwriters Laboratory File #E52744
• V VDE #0884 Approval Available with Option 1
D E
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
3
2
1
pin one ID
6 Base
Anode 1
.248 (6.30)
.256 (6.50)
5 Collector
Cathode 2
4
5
6
4 Emitter
NC 3
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 VRMS Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)® on the phototransistor substrate. These isolation processes and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
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March 27, 2000-00
Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t≤10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage .............................................................................................. ≥7.0 mm
Clearance ............................................................................................. ≥7.0 mm
Isolation Thickness between Emitter and Detector ............................... ≥0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................1012 Ω
VIO=500 V, TA=100°C............................................................................ 1011 Ω
Storage Temperature................................................................ –55°C to +150°C
Operating Temperature ............................................................ –55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
VF
—
1.3
1.5
V
IF=50 mA
Reverse Current*
IR
—
0.1
100
µA
VR=3.0 V
Capacitance
CO
—
25
—
pF
VR=0
Collector-Emitter
BVCEO
30
—
—
V
IC=1.0 mA
Emitter-Collector
BVECO
7.0
—
—
IE=100 µA
Collector-Base
BVCBO
70
—
—
IC=100 µA
4N25/26/27
4N28
—
—
5.0
10
50
100
nA
VCE=10 V, (base open)
ICBO(dark)*
—
—
2.0
20
nA
VCB=10 V, (emitter open)
Capacitance, Collector-Emitter
CCE
—
6.0
—
pF
VCE=0
CTR
20
50
—
%
VCE=10 V, IF=10 mA
10
30
—
2500
—
—
V
Peak, 60 Hz
4N26/27
1500
—
—
4N28
500
—
—
Detector
Breakdown Voltage*
ICEO(dark)*
Package
DC Current Transfer Ratio*
4N25/26
4N27/28
Isolation Voltage*
4N25
VIO
Saturation Voltage, Collector-Emitter
VCE(sat)
—
—
0.5
V
ICE=2.0 mA, IF=50 mA
Resistance, Input to Output*
RIO
100
—
—
GΩ
VIO=500 V
Coupling Capacitance
CIO
—
0.5
—
pF
f=1.0 MHz
Rise and Fall Times
tr, tf
—
2.0
—
µs
IF=10 mA
VCE=10 V, RL=100 Ω
* Indicates JEDEC registered values
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
2–54
March 27, 2000-00
4N35/36/37/38—Characteristics TA=25°C
Emitter
Symbol
Forward Voltage*
VF
Min.
Typ.
Max.
Unit
Condition
1.3
1.5
1.7
V
IF=10 mA
IF=10 mA, TA=–55°C
0.9
Reverse Current*
IR
0.1
10
µA
VR=6.0 V
Capacitance
CO
25
—
pF
VR=0, f=1.0 MHz
V
IC=1.0 mA
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
BVCEO
30
—
—
80
—
—
BVECO
7.0
—
—
V
IE=100 µA
BVCBO
70
—
—
V
IC=100 µA, IB=1.0 µA
80
—
—
—
ICEO
—
5.0
50
nA
—
—
50
ICEO
—
—
500
—
6.0
—
CCE
—
6.0
CTR
100
4N38
Breakdown Voltage, Emitter-Collector*
Breakdown Voltage, Collector-Base*
4N35/36/37
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
4N38
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
Capacitance, Collector-Emitter
VCE=10 V, IF=0
VCE=60 V, IF=0
µA
VCE=30 V, IF=0, TA=100°C
—
pF
VCE=0
—
—
%
VCE=10 V, IF=10 mA,
VCE=60 V, IF=0, TA=100°C
Package
DC Current Transfer Ratio*
4N35/36/37
20
—
—
DC Current Transfer Ratio*
4N35/36/37
CTR
40
50
—
%
4N38
—
—
30
—
—
VCE=10 V, IF=10 mA,
TA=–55 to 100°C
—
—
Ω
VIO=500 V
4N38
Resistance, Input to Output*
11
VCE=1.0 V, IF=20 mA
RIO
10
Coupling Capacitance
CIO
—
0.5
—
pF
f=1.0 MHz
Switching Time*
tON, tOFF
—
10
—
µs
IC=2.0 mA, RL=100 Ω, VCC=10 V
Symbol
Min.
Typ.
Max.
Unit
Condition
VF
—
1.1
1.5
V
IF=10 mA
—
1.1
1.7
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics TA=25°C
Emitter
Forward Voltage
H11A1–H11A4
H11A5
Reverse Current
IR
—
—
10
µA
VR=3.0 V
Capacitance
C0
—
50
—
pF
VR=0, f=1.0 MHz
Breakdown Voltage, Collector-Emitter
BVCEO
30
—
—
V
IC=1.0 mA, IF=0 mA
Breakdown Voltage, Emitter-Collector
BVECO
7.0
—
—
V
IE=100 µA, IF=0 mA
Detector
Breakdown Voltage, Collector-Base
BVCBO
70
—
—
V
IC=10 µA, IF=0 mA
Leakage Current, Collector-Emitter
ICEO
—
5.0
50
nA
VCE=10 V, IF=0 mA
Capacitance, Collector-Emitter
CCE
—
6.0
—
pF
VCE=0
CTR
%
VCE=10 V, IF=10 mA
Package
DC Current Transfer Ratio
H11A1
50
—
—
H11A2/3
20
—
—
H11A4
10
—
—
H11A5
30
—
—
Saturation Voltage, Collector-Emitter
VCEsat
—
—
0.4
V
ICE=0.5 mA, IF=10 mA
Capacitance, Input to Output
CIO
—
0.5
—
pF
—
Switching Time
tON, tOFF
—
3.0
—
µs
IC=2.0 mA, RL=100 Ω, VCE=10 V
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
2–55
March 27, 2000-00
MCT2/MCT2E—Characteristics TA=25°C
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
VF
—
1.1
1.5
V
IF=20 mA
Reverse Current
IR
—
—
10
µA
VR=3.0 V
Capacitance
CO
—
25
—
pF
VR=0, f=1.0 MHz
Collector-Emitter
BVCEO
30
—
—
V
Emitter-Collector
BVECO
7.0
—
—
IE=100 µA, IF=0 mA
Collector-Base
BVCBO
70
—
—
IC=10 µA, IF=0 mA
Collector-Emitter
ICBO
—
5.0
50
nA
Collector-Base
ICBO
—
—
20
—
—
CCE
—
10
—
pF
VCE=0
CTR
20
60
—
%
VCE=10 V, IF=10 mA
Detector
Breakdown Voltage
Leakage Current
Capacitance, Collector-Emitter
IC=1.0 mA, IF=0 mA
VCE=10 V, IF=0
Package
DC Current Transfer Ratio
Capacitance, Input to Output
CI O
—
0.5
—
pF
—
Resistance, Input to Output
RIO
—
100
—
GΩ
—
Switching Time
tON, tOFF
—
3.0
—
µs
IC=2.0 mA, RL=100 Ω, VCE=10 V
MCT270 through MCT277—Characteristics TA=25°C
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
VF
—
—
1.5
V
IF=20 mA
Reverse Current
IR
—
—
10
µA
VR=3.0 V
Capacitance
CO
—
25
—
pF
VR=0, f=1.0 MHz
Collector-Emitter
BVCEO
30
—
—
V
IC=10 µA, IF=0 mA
Emitter-Collector
BVECO
7.0
—
—
Collector-Base
BVCBO
70
—
—
—
IC=10 µA, IF=0 mA
ICEO
—
—
50
nA
VCE=10 V, IF=0 mA
CTR
50
—
—
%
VCE=10 V, IF=10 mA
VCE=0.4 V, IF=16 mA
Detector
Breakdown Voltage
Leakage Current, Collector-Emitter
IE=10 µA, IF=0 mA
Package
DC Current Transfer Ratio
MCT270
MCT271
45
—
90
MCT272
75
—
150
MCT273
125
—
250
MCT274
225
—
400
MCT275
70
—
210
MCT276
15
—
60
MCT277
100
—
—
CTRCE
12.5
—
—
%
40
—
—
—
Collector–Emitter Saturation Voltage
VCEsat
—
—
0.4
V
ICE=2.0 mA, IF=16 mA
Capacitance, Input to Output
CIO
—
0.5
—
pF
—
RIO
—
1012
—
Ω
VIO=500 VDC
tON, tOFF
µs
IC=2.0 mA,
RL=100 Ω,
VCE=5.0 V
Current Transfer Ratio, Collector–Emitter
MCT271–276
MCT277
Resistance, Input to Output
Switching Time
MCT270/272
—
—
10
MCT271
—
—
7.0
MCT273
—
—
20
MCT274
—
—
25
MCT275/277
—
—
15
MCT276
—
—
3.5
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
2–56
March 27, 2000-00
Figure 1. Forward Voltage vs. Forward Current
Figure 4. Normalized Non-saturated and Saturated
CTR, TA=70°C vs. LED Current
1.5
1.3
NCTR - Normalized CTR
VF - Forward Voltage - V
1.4
TA = –55°C
1.2
TA = 25°C
1.1
1.0
0.9
TA = 85°C
0.8
1.0
TA=70°C
0.5
NCTR(SAT)
NCTR
0.0
0.7
.1
1
10
IF - Forward Current - mA
.1
100
Figure 2. Normalized Non-saturated and Saturated
CTR, TA=25°C vs. LED Current
1
10
IF - LED Current - mA
1.5
NCTR - Normalized CTR
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
1.0
TA=25°C
0.5
NCTR(SAT)
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce = 0.4 V
1.0
TA=85°C
0.5
NCTR(SAT)
NCTR
NCTR
0.0
0.0
0
1
10
IF - LED Current - mA
.1
100
Figure 3. Normalized Non-saturated and Saturated
CTR, TA=50°C vs. LED Current
1
10
IF - LED Current - mA
100
Figure 6. Collector-emitter Current vs. Temperature
and LED Current
35
1.5
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
Ice - Collector Current - mA
NCTR - Normalized CTR
100
Figure 5. Normalized Non-saturated and Saturated
CTR, TA=85°C vs. LED Current
1.5
NCTR - Normlized CTR
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
1.0
TA=50°C
0.5
NCTR(SAT)
NCTR
30
25
50°C
20
70°C
15
25°C
85°C
10
5
0
0.0
.1
1
10
IF - LED Current - mA
0
100
10
20
30
40
50
60
IF - LED Current - mA
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
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Phototransistor, Industry Standard
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March 27, 2000-00
Figure 7. Collector-emitter Leakage Current vs. Temp.
10
10
10
1.2
4
3
2
Vce = 10 V
1
Typical
10 0
10 –1
10 –2
–20
0
20
40
60
80
70°C
50°C
1.0
25°C
–20°C
0.8
Normalized to:
Ib=20 µA, Vce=10 V, TA=25°C
0.6
0.4
100
1
10
100
Ib - Base Current - µA
TA - Ambient Temperature - °C
Figure 11. Normalized HFE vs. Base Current and Temp.
1.5
1.5
Normalized to:
Vcb=9.3 V, IF=10 mA, TA=25°C
NHFE(sat) - Normalized
Saturated HFE
NCTRcb - Normalized CTRcb
Figure 8. Normalized CTRcb vs. LED Current and Temp.
1.0
0.5
25°C
50°C
70°C
50°C
70°C
1.0
25°C
–20°C
0.5
Vce=0.4 V
1
10
1
100
10
1
0.1
Nib, TA=–20°C
Nib, TA=25°C
Nib, TA= 50°C
Nib, TA=70°C
10
tPLH - Propagation Delay - µs
Normalized to:
IF=10 mA, TA=25°C
1
1000
Figure 12. Propagation Delay vs. Collector Load Resistor
1000
2.5
Figure 9. Normalized Photocurrent vs. IF and Temp.
10
0.01
.1
100
Ib - Base Current - µA
IF - LED Current - mA
IF=10 mA, TA=25°C
VCC=5.0 V, Vth=1.5 V
100
tPHL
2.0
10
1.5
tPLH
1
.1
100
IF - LED Current - mA
1
1.0
100
10
RL - Collector Load Resistor - kΩ
Figure 14. Switching Schematic
Figure 13. Switching Timing
IF
VCC = 5.0 V
F=10 KHz,
DF=50%
tD
VO
Normalized to:
Vce=10 V, Ib=20 µA
TA=25°C
0.0
0.0
.1
Normalized Photocurrent
1000
tPHL - Propagation Delay - µs
10
Figure 10. Normalized Non-saturated HFE vs. Base
Current and Temperature
NHFE - Normalized HFE
Iceo - Collector-Emitter - nA
10
5
tR
VO
tPLH
IF =10 mA
VTH=1.5 V
tPHL
RL
tS
tF
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
Phototransistor, Industry Standard
2–58
March 27, 2000-00
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