Rectron MMBT3906 Sot-23 bipolar transistors transistor(pnp) Datasheet

MMBT3906
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* As complementary type,the NPN transistor
MMBT3904 is Recommended
* Epitaxial planar die construction
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
0.055(1.40)
0.047(1.20)
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.019(2.00)
0.071(1.80)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
1
0.118(3.00)
3 0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
O
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C
PD
300
mW
Max. Operating Temperature Range
TJ
150
o
C
-55 to +150
o
C
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina.
2."Fully ROHS Compliant", "100% Sn plating(Pb-free)".
SYMBOL
MIN.
TYP.
MAX.
RqJA
-
-
417
UNITS
o
C/W
2007-5
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (2) (I C = -1.0 mAdc, I B = 0)
V(BR)CEO
-40
-
Vdc
Collector-Base Breakdown Voltage (I C = -100uAdc, I E = 0)
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdown Voltage (I E = -100uAdc, I C = 0)
V(BR)EBO
-5.0
-
Vdc
IBL
-
-50
nAdc
ICEX
-
-50
nAdc
DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc)
60
-
(I C = -1.0mAdc, V CE = -1.0Vdc)
80
-
Base Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc)
Collector Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc)
ON CHARACTERISTICS(1)
(I C = -10mAdc, V CE = -1.0Vdc)
hFE
100
300
(I C = -50mAdc, V CE = -1.0Vdc)
60
-
(I C = -100mAdc, V CE = -1.0Vdc)
30
-
-
-0.25
-
-0.4
-0.65
-0.85
-
-0.95
fT
250
-
MHz
Output Capacitance (V CB = -5.0Vdc, I E = 0, f= 1.0MHz)
Cobo
-
4.5
pF
Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz)
Cibo
-
10
pF
Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hie
2.0
12
kW
Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hre
0.1
10
X 10 -4
Small-Signal Current Gain (V CE = -10Vdc, I C = -10mAdc, f= 1.0kHz)
hfe
100
400
-
Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hoe
3.0
60
umhos
Noise Figure (V CE = -5.0Vdc, I C = -100uAdc, RS= 1.0kW, f= 1.0kHz)
NF
-
4.0
dB
td
-
35
tr
-
35
ts
-
225
tf
-
75
Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc)
(I C = -50mAdc, I B = -5.0mAdc)
Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc)
(I C = -50mAdc, I B = -5.0mAdc)
VCE(sat)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 100MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = -3.0Vdc, V BE = 0.5Vdc, I C = -10mAdc, I B1 = -1.0mAdc)
(V CC = -3.0Vdc, I C = -10mAdc, I B1 = I B2 = -1.0mAdc)
<2.0%
Note : Pulse Test: Pulse Width<
-300ms,Duty Cycle-
ns
ns
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
RATING AND CHARACTERISTICS CURVES ( MMBT3906 )
Cibo
3.0
1000
700
500
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0
300
200
100
70
50
20 30 40
2.0 3.0 5.0 7.0 10
VCC= 40 V
IC/IB= 10
QT
1.0
QA
2.0 3.0
REVERSE BIAS (VOLTS)
t f,FALL TIME (ns)
TIME (ns)
15 V
30
20
40 V
20 30
50 70 100
IC/IB= 20
100
70
50
30
20
IC/IB= 10
10
2.0 V
7
5
td @ VOB=0V
5.0 7.0 10
VCC= 40 V
IB1 = IB2
300
200
tr @ VCC=3.0V
2.0 3.0
200
1.0
2.0 3.0
Figure 3 Turn-On Time
f = 1.0 kHz
SOURCE RESIST ANCE=200W
IC= 0.5 mA
SOURCE RESISTANCE=2.0k
IC= 50uA
2.0
1.0
0
0.1
SOURCE RESIST ANCE=2.0k
IC= 100uA
0.2
0.4
1.0
2.0
50 70 100
IC= 1.0 mA
10
IC= 0.5 mA
8
6
4
IC= 50uA
IC= 100uA
2
4.0
10
f, FREQUENCY (kHz)
Figure 5
200
12
SOURCE RESIST ANCE=200W
IC= 1.0 mA
3.0
20 30
Figure 4 Fall Time
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
4.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
5.0
200
500
IC/IB= 10
300
200
1.0
50 70 100
Figure 2 Charge Data
500
10
7
5
20 30
IC, COLLECTOR CURRENT (mA)
Figure 1 Capacitance
100
70
50
5.0 7.0 10
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
Rg, SOURCE RESIST ANCE (KOHMS)
Figure 6
100
RATING AND CHARACTERISTICS CURVES ( MMBT3906 )
100
hoe, OUTPUT ADMITTANCE (umhos)
hfe, DCCURRENT GAIN
300
200
100
70
50
30
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
70
50
30
20
10
7
5
5.0 7.0 10
0.1
0.2
IC, COLLECTOR CURRENT (mA)
hre, VOLTAGE FEEDBACK RATIO(x10-4)
3.0
2.0
1.0
0.7
0.5
0.5 0.7 1.0
3.0
2.0
1.0
0.7
0.5
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
5.0 7.0 10
2.0 3.0
Figure 10 Voltage Feedback Ratio
VBE(sat)@IC/IB=10
VBE@VCE=1.0V
0.6
0.4
VCE(sat)@IC/IB=10
0.2
2.0
5.0
Figure 9 Input lmpedance
0.8
1.0
7.0
IC, COLLECTOR CURRENT (mA)
TJ= 25OC
0
10
IC, COLLECTOR CURRENT (mA)
1.0
V,VOLTAGE (V)
2.0 3.0
5.0
10
20
50
100
200
QV, TEMPERATURE COEFFICIENTS (mV/oC)
hie, INPUT IMPEDANCE (KOHMS)
10
7.0
5.0
0.2 0.3
5.0 7.0 10
2.0 3.0
Figure 8 Output Admittance
20
0.1
0.5 0.7 1.0
IC, COLLECTOR CURRENT (mA)
Figure 7 Current Gain
0.3
0.2
0.3
1.0
0.5
+25OC TO +125OC
qVCFOR VCE(sat)
0
-55OC TO +25OC
± 0.5
+25OC TO +125OC
± 1.0
-55OC TO +25OC
qVBFOR VBE(sat)
± 1.5
± 2.0
0
20
40
60
80
100
120 140
160
180 200
IC,COLLECTOR CURRENT(mA)
IC, COLLECTOR CURRENT (mA)
Figure 11 "ON" Voltages
Figure 12 Temperature Coefficients
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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