Rectron FSM105 Surface mount glass passivated fast recovery silicon rectifier (voltage range 50 to 1000 volts current 1.0 ampere) Datasheet

FSM101
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FSM107
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Fast switching
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.015 gram
MELF
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.205 (5.2)
.190 (4.8)
SOLDERABLE
ENDS
.028 (.60)
.018 (.46)
.106 (2.7)
.095 (2.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
SYMBOL
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T A = 55o C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS
VRRM
50
100
200
400
600
800
1000
VRMS
35
70
140
280
420
560
700
Volts
VDC
50
100
200
400
600
800
1000
Volts
IO
1.0
Amps
I FSM
30
Amps
(Note 2) Rθ JL
(Note 3) Rθ JA
30
75
15
-65 to + 175
CJ
T J , T STG
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
Volts
0
0
C/ W
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 4)
@T A = 25 o C
@T A = 125 oC
FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS
1.3
50
5.0
VF
IR
Volts
uAmps
uAmps
100
trr
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
150
250
500
uAmps
nSec
2001-4
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
RATING AND CHARACTERISTIC CURVES ( FSM101 THRU FSM107 )
1.0
.8
.6
.4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.2
0
0
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
8.3ms Single Half Sine-Wave
(JEDED Method)
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE, ( )
1
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
4
TJ = 100
1.0
.4
.1
.04
TJ = 25
.01
20
10
TJ = 25
Pulse Width = 300us
1% Duty Cycle
1.0
.1
.01
.6
.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(¡V)
D.U.T
PULSE
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
0
-0.25A
(+)
-1.0A
1cm
JUNCTION CAPACITANCE, (pF)
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
(+)
25 Vdc
(approx)
(¡V)
4 6 8 10 20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
2
SET TIME BASE FOR
50/100 ns/cm
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ = 25
2
1
.1
.2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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