Mitsubishi FG2000FX-50DA High power inverter use press pack type Datasheet

MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
FG2000FX-50DA
Dimensions in mm
GATE (WHITE)
400 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
0.4 MIN
● ITQRM Repetitive controllable on-state current ...........2200A
● IT(AV) Average on-state current .....................1050A
● VDRM Repetitive peak off state voltage ...................2500V
● Anode short type
0.4 MIN
26 ± 0.5
φ 63 ± 0.5
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
φ 63±0.5
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
φ 93 MAX
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
Voltage class
50DA
17
17
17
2500
2500
2000
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
Unit
V
V
V
V
V
V
+ : VGK = –2V
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 1875V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH
f = 60Hz, sine wave θ = 180°, Tf = 73°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 1250V, IGM = 30A, Tj = 125°C
Recommended value 20
Standard value
Ratings
2200
1650
1050
16
10.5 × 105
1000
10
17
100
650
280
18
50
150
–40 ~ +125
–40 ~ +150
18 ~ 24
760
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test conditions
VTM
IRRM
IDRM
IRG
dv/dt
tgt
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, ITM = 2000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Tj = 125°C, VD = 1250V, VGK = –2V
Tj = 125°C, ITM = 2200A, IGM = 30A, VD = 1250V
tgq
Turn-off time
IGQM
VGT
IGT
Rth(j-f)
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, ITM = 2200A, VDM = 1875V, diGQ/dt = –30A/µs
VRG = 17V, CS = 4.0µF, LS = 0.3µH
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
1000
—
Limits
Typ
—
—
—
—
—
—
—
—
—
—
—
—
610
—
—
—
Max
2.4
50
50
50
—
10
30
—
1.5
2500
0.017
Unit
V
mA
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
MAXIMUM ON-STATE CHARACTERISTIC
104
7 Tj = 125°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
0
RATED SURGE ON-STATE CURRENT
20
SURGE ON-STATE CURRENT (kA)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
16
12
8
4
0
100
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
100
7
5
3
2
PFGM = 280W
PFG(AV) = 50W
VGT = 1.5V
Tj = 25°C
IGT = 2500mA
IFGM = 100A
10–1
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
GATE CURRENT (mA)
2 3
5 7 102
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
100 2 3 5 7101
0.020
THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
101
7
5
3
2
VFGM = 10V
5 7 101
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
102
7
5
3
2
2 3
0.016
0.012
0.008
0.004
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (S)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4000
160
3500
150
θ
3000
360°
RESISTIVE,
2500 INDUCTIVE
LOAD
2000
60° 90°
120° 180°
θ = 30°
1500
1000
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
HIGH POWER INVERTER USE
PRESS PACK TYPE
500
0
120
110
100
90
80
70
0
300
600
900
60
1200
θ = 30°
0
200
400
60°
90° 120° 180°
600
800
1000 1200
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
4000
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
DC
270°
3500
180°
3000
120°
90°
2500
60°
θ = 30°
2000
1500
θ
1000
360°
RESISTIVE,
INDUCTIVE
LOAD
500
0
120
FIN TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
360°
RESISTIVE,
INDUCTIVE
LOAD
130
AVERAGE ON-STATE CURRENT (A)
0
500
1000
1500
100
90
80
70
50
2000
6000
5000
4000
3000
2000
1000
0
–60
–20
20
60
100
JUNCTION TEMPERATURE (°C)
θ = 30° 60° 90° 180°
120° 270° DC
140
0
500
1000
1500
2000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME tgt, TURN ON DELAY TIME td (µs)
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
7000
360°
RESISTIVE,
INDUCTIVE
LOAD
60
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
8000
θ
110
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT (mA)
θ
140
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
IT = 2200A
VD = 1250V
diT/dt = 500A/µs
diG/dt = 10A/µs
Tj = 125°C
9.0
8.0
7.0
6.0
5.0
tgt
4.0
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
tgq
25
ts
20
15
VD = 1250V
VDM = 1875V
diGQ/dt = –30A/µs
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
10
5
0
500
1000
1500
2000
2500
TURN OFF CURRENT (A)
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
30
tgq
20 VD = 1250V
0
10
600
500
400
VD = 1250V
VDM = 1875V
diGQ/dt = –30A/µs
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
300
0
500
1000
1500
2000
TURN OFF GATE CURRENT (A)
TURN OFF GATE CURRENT (A)
40
50
60
800
600
500
VD = 1250V
VDM = 1875V
IT = 2200A
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
400
20
30
40
50
60
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
3.0
diT/dt = 500A/µs
1.0
300A/µs
0.8
200A/µs
0.6
100A/µs
0.4
0.2
500
1000
1500
2000
TURN ON CURRENT (A)
2500
SWITCHING ENERGY Eoff (J/P)
VD = 1250V
1.4 IGM = 30A
diG/dt = 10A/µs
CS = 4.0µF
1.2
RS = 5Ω
Tj = 125°C
0
700
300
10
2500
1.6
SWITCHING ENERGY Eon (J/P)
30
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
700
0
20
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
200
ts
VDM = 1875V
IT = 2200A
10 VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
2.5
2.0
1.5
VD = 1250V
VDM = 1875V
diGQ/dt = –30A/µs
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
1.0
0.5
0
0
500
1000
1500
2000
2500
TURN OFF CURRENT (A)
Aug.1998
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