IXYS DSEP6-06AS Hiperfredtm epitaxial diode with soft recovery Datasheet

DSEP 6-06AS
HiPerFREDTM Epitaxial Diode
IFAVM = 6 A
VRRM = 600 V
trr
= 20 ns
with soft recovery
VRSM
V
VRRM
V
Type
Marking
on product
600
600
DSEP 6-06AS
C
A
TO-252AA (DPAK)
Anode
6P060AS
Cathode (Flange)
Anode
Symbol
Conditions
IFRMS
IFAVM ①
IFRM
TVJ = TVJM
TC = 152°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
IFSM
A
TVJ = 45°C; t = 10 ms
EAS
IAR
Maximum Ratings
26
6
12
A
A
A
(50 Hz), sine
40
TVJ = 25°C; non-repetitive
IAS = 0.8 A; L = 180 µH
0.1
mJ
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-40...+175
175
-40...+150
°C
°C
°C
TVJ
TVJM
Tstg
Ptot
TC = 25°C
55
W
Weight
typ.
0.3
g
Symbol
Conditions
Features
•
•
•
•
•
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Applications
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
Characteristic Values
typ.
IR
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
VF
IF = 6 A;
TVJ = 150°C
TVJ = 25°C
RthJC
max.
50
0.2
µA
mA
1.33
2.02
V
V
2.8
K/W
trr
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C
20
tbd
ns
IRM
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs
TVJ = 100°C
3.5
4.4
A
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
Dimensions see pages D4 - 85-86
① IFAVM rating includes reverse blocking losses
at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
432
Data according to IEC 60747
1-2
DSEP 6-06AS
10
30
1000
A
nC
8
800
IF
VR = 300V
VR = 300V
A
IRM
Qr
TVJ =150°C
6
TVJ = 100°C
TVJ = 100°C
20
600
TVJ =100°C
TVJ = 25°C
4
400
2
IF = 12A
IF = 6A
IF = 3A
IF = 12A
IF = 6A
IF = 3A
10
200
0
0.0
0.5
1.0
1.5
0
100
2.0 V
0
A/µs 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
110
1.6
trr
Kf
90
0.8
80
IRM
Qr
0.4
400
600 A/µs
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.2
µs
V
VR = 300V
tfr
100
1.2
200
20
TVJ = 100°C
ns
0
15
VFR
IF = 12A
IF = 6A
IF = 3A
0.9
VFR
tfr
10
0.6
5
0.3
70
TVJ = 100°C
IF = 6A
0.0
60
0
40
80
120 °C 160
0
0
TVJ
200
400
600
800 1000
A/µs
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
0
200
400
0.0
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
K/W
1
ZthJC
0.1
0.01
0.001
0.00001
DSEP 6-06AS
0.0001
0.001
0.01
s
0.1
NOTE: Fig. 2 to Fig. 6 shows typical values
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
432
Fig. 7 Transient thermal resistance junction to case
2-2
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