IRF IRISA6131 Integrated switcher Datasheet

IRIS-A6131
Features
INTEGRATED SWITCHER
•Small sized 8-pin DIP type full molded package, optimum IC for lowheight SMPS
•Off-timer circuit is provided on the monolithic control IC
• Low start-up circuit current (10uA max)
Package Outline
•Low circuit current at operation (1.5mA typ)
• Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
•Built-in Start-up circuit (the power loss in the start-up circuit is
reduced by cutting off the start-up circuit after the IC starts its
operation.)
•Auto Burst Stand-by (realizing input power<0.1W at no load)
•Auto Bias Function (stable burst operation without the interference on
transformer)
•Two operational modes by auto switching functions
For normal operation: PRC mode
For stand-by operation (at light load): Burst mode
•Built-in Leading Edge Blanking Function
8 Lead PDIP
• Built-in constant voltage drive circuit
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Key Specifications
Overvoltage Protection with latch mode (OVP)
MOSFET
RDS(ON)
Thermal Shutdown with latch mode (TSD)
Descriptions
Type
VDSS(V)
MAX
ACinput(V)
Pout(W)
Note 1
IRIS-A6131
500
3.95Ω
100/120±15%
10
IRIS-A6131 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC
fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC
operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply
system reducing external component count and simplifying the circuit design.
Note: PRC is abbreviation for “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
8
D
7
D
6
NC
5
Startup
IRIS-A6131
OCP
1
Vcc
2
GND
3
FB
4
Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by
approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the
Pout (W) shall become lower than that of above value.
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IRIS-A6131
Absolute Maximum Ratings (Ta=25℃
℃)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
IDpeak
Definition
Drain Current
*1
IDMAX
Maximum switching current
8-3
3.2
A
EAS
VOCP
Single pulse avalanche energy *2
O.C.P. pin Voltage
8-3
1-3
32
-0.5~6
mJ
V
VCC
Input voltage for control part
2-3
35
V
VFB/OLP
F.B/O.L.P pin voltage
4-3
-0.5~10
Vstartup
P D1
Startup pin voltage
5-3
-0.3~600
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
8-3
1.35
W
2-3
0.14
W
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
℃
℃
℃
℃
P D2
TF
Top
Tstg
Tch
Terminals Max. Ratings
8-3
3.2
Units
A
Note
Single Pulse
V1-3=0.86V
Ta=-20~+125℃
Single Pulse
VDD=99V,L=20mH
IL=2.1A
*5
Specified by
Vcc×ICC
Refer to recommended
operating temperature
*1 Refer to MOSFET A.S.O curve
*2 MOSFET Tch-EAS curve
*3 Refer to MOSFET Ta-PD1 curve
Fig.1
V1-2
*4 Refer to TF-PD2 curve for Control IC
*5 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
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IRIS-A6131
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Symbol
Definition
VCC(ON) Operation start voltage
VCC(OFF) Operation stop voltage
MIN
16
Ratings
TYP
17.5
MAX
19.2
Units
V
9
10
11
V
Test
Conditions
VCC=0→19.2V
VCC=19.2→9.V
ICC(ON)
Circuit current in operation
-
-
4
mA
-
ICC(OFF)
Circuit current in non-operation
-
-
50
µA
VCC=14V
VCC(bias)
-
Auto bias threshold voltage
9.6
10.6
11.6
V
VCC=20→9.6V
Vcc(bias) - Vcc(OFF)
Maximum OFF time
O.C.P. threshold voltage
0.2
7.3
0.69
8
0.77
8.7
0.86
V
µsec
V
-
Leading edge blanking time
Burst threshold voltage
O.L.P. threshold voltage
200
0.7
6.5
320
0.79
7.2
480
0.88
7.9
nsec
V
V
-
Out-flow current at O.L.P operation
Maximum F.B. current
18
227
26
300
35
388
µA
µA
-
340
790
1230
µA
VCC=15V
-
-
30
µA
-
O.V.P operation voltage
28.7
31.2
34.1
V
VCC=0→34.1V
Latch circuit sustaining current *6
Latch circuit release voltage *6
6.6
7.3
200
8
VCC=34.1→8.5V
135
-
-
µA
V
℃
TOFF(MAX)
VOCP
Tbw
Vburst
VOLP
IOLP
IFB(MAX)
IST ART UP Startup current
IST ART (leak) Startup circuit leakage current
VCC(OVP )
ICC(H)
VCC(La.OFF)
Tj(TSD) Thermal shutdown operating temperature
VCC=34.1→6.6V
-
*6 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Symbol
Definition
MIN
Ratings
TYP
MAX
Units
Test Conditions
500
-
-
V
V1- 3 =0V(short)
ID=300µA
VDSS
Drain-to-Source breakdown voltage
VDS =500V
Drain leakage current
IDSS
RDS(ON) On-resistance
tf
Switching time
-
-
300
3.95
250
µA
Ω
nsec
V1- 3 =0V(short)
ID=0.4A
Between channel and
θch-F
Thermal resistance
*7
-
-
52
℃/W
internal frame
*7 Internal frame temperature (TF) is measured at the root of the Pin 3.
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IRIS-A6131
IRIS-A6131
IRIS-A6131
A.S.O. temperature derating coefficient curve
MOSFET A.S.O. Curve
100
80
Drain Current ID[A]
10
60
40
Drain current
limit by ON
resistance
0
0
20
40
60
80
100
0.1ms
1ms
1
0.1
20
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0.01
120
1
Internal frame temperature TF [℃]
10
100
Drain-to-Source Voltage VDS[V]
1000
IRIS-A 6131
A valanche energy derating curve
100
EAS temperature derating coefficient [%]
A.S.O. temperature derating coefficient[%]
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature Tch [℃ ]
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IRIS-A6131
IRIS-A6131
MOSFET Ta-PD1 Curve
IRIS-A6131
MIC TF-PD2 Curve
1.6
0.16
PD1=1.35[W]
1.4
0.14
1.2
Power dissipation PD2[W]
0.12
1
0.8
0.6
0.4
0.1
0.08
0.06
0.04
0.2
0.02
0
0
20
40
60
80
0
100 120 140 160
0
Ambient temperature Ta[℃]
20
40
60
80 100 120
Internal frame temperature TF[℃]
140
IRIS-A6131
Transient thermal resistance curve
10
Transient thermal resistance θch-a[℃/W]
Power dissipation PD1[W]
PD2=0.15[W]
1
0.1
0.01
1µ
10µ
100µ
1m
10m
100m
time t [sec]
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IRIS-A6131
Block Diagram
Startup
Vcc
2
5
OVP
UVLO
Internal
Bias
+
-
Latch
+
-
Delay
TSD
8 D
Power
MOS FET
OFF Timer
7 D
Drive
PWM Latch
+
S Q
R
OLP
Bias
+
-
-
-
+
Burst
Blanking
+
-
Discharge
FB
-
OCP
1 Source/OCP
+
-
+
Buffer
3 GND
4
FB/OLP
Lead Assignments
Description
Source Pin
Power supply Pin
Function
MOSFET source
Input of power supply for control circuit
3
Symbol
S/OCP
VCC
GND
Ground Pin
4
5
6
7
8
FB/OLP
Startup
N.C.
Drain
Drain
Feedback/OLP pin
Startup pin
Drain Pin
Drain Pin
Ground
Input of constant voltage control signal/over
load protection signal
Input of Startup current
Not Connected
MOSFET drain
MOSFET drain
Pin No.
Pin Assignment
(Top View)
S/OCP
1
8
Drain
VCC
2
7
Drain
GND
3
6
N.C.
FB/OLP
4
5
Startup
1
2
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
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IRIS-A6131
Case Outline
8
7 6
5
A6131
1
2 3
a
b
c
IR
4
a. Type Number
b. Lot Number
1st letter:The last digit of year
2nd letter:Month
(1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.)
3rd letter:Week
1~3 : Arabic numerals
c. Registration Number
Material of Pin : Cu
Treatment of Pin : Solder plating
Weight: Approx. 0.51g
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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