FAIRCHILD FJN965

FJN965
FJN965
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
PC
Collector Dissipation
0.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Voltage
Test Condition
IC=1mA, IB=0
Min.
20
Typ.
Max.
Units
V
0.1
µA
BVEBO
Emitter Base Voltage
IC=100µA, IC=0
ICBO
Collector Cut-off Current
VCB=10V, IE=0
ICEO
Collector Cut-off Current
VCE=10V, IB=0
1
µA
IEBO
Emitter Cut-off Current
VEB=7V, IC=0
0.1
µA
hFE1
hFE2
DC Current Gain
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE (sat)
Collector-Emitter Saturation Voltage
IC=3A, IB=0.1A
fT
Current Gain Band Width Product
VCE=6V, IC=50mA
150
MHz
Cob
Collector Output Capacitance
VCB=20V, IE=0, f=1MHz
23
pF
©2002 Fairchild Semiconductor Corporation
7
V
230
150
600
1
V
Rev. A2, August 2002
FJN965
Typical Characteristics
14
1.8
IB=200mA
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
VCE=2V
1.6
12
1.4
10
1.2
8
o
Ta=125 C
1.0
o
o
25 C
-40 C
0.8
6
0.6
IB=20mA
4
0.4
2
0.2
0
0
2
4
6
8
0.0
0.0
10
0.2
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.4
0.6
0.8
1.0
Figure 1. Static Characteristic
10
IC=30IB
VCE=2V
VCE(sat)[V], SATURATION VOLTAGE
o
Ta=125 C
o
hFE, DC CURRENT GAIN
Ta=25 C
o
Ta=-40 C
100
10
0.01
0.1
1
10
1
0.1
o
Ta=125 C
o
0.01
Ta=25 C
o
Ta=-40 C
1E-3
0.01
100
IC[A], COLLECTOR CURRENT
1
10
Figure 4. Collector-Emitter Saturation Voltage
10
100
IE=0,f=1MHZ
IC=30IB
Cob[pF], OUTPUT CAPACITANCE
VBE(sat)[V], SATURATION VOLTAGE
0.1
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
0.1
0.01
1.4
Figure 2. Base-Emitter On Voltage
1000
1
1.2
VBE[V], BASE-EMITTER VOLTAGE
0
Ta=-40 C
0
Ta=25 C
0
Ta=125 C
80
60
40
20
0
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 6. Collector Output Capacitance
Rev. A2, August 2002
FJN965
Typical Characteristics (Continued)
1.0
100
SinglePulse
o
Ta=25 C
0.8
10
ICP
IC [A], COLLECTORCURRENT
PC [W], POWERDISSIPATION
t =10ms
0.6
0.4
0.2
0.0
0
25
50
75
100
125
o
Ta [ C], AMBIENTTEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
150
IC
t =1s
1
0.1
0.01
0.1
1
10
100
VCE [V], SATURATIONVOLTAGE
Figure 8. Forward Bias Safe Operating Area
Rev. A2, August 2002
FJN965
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJN965
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1