Hamamatsu G8370-85 Ingaas pin photodiode Datasheet

PHOTODIODE
InGaAs PIN photodiode
G8370-81/-82/-83/-85
Low PDL (Polarization Dependence Loss)
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low
noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
Features
Applications
l Low PDL (Polarization Dependence Loss)
l Low noise, low dark current
l Large active area
l Various active area sizes available
l Laser monitor
l Optical power meter
l Laser diode life test
■ Specifications / Absolute maximum ratings
Type No.
G8370-81
G8370-82
G8370-83
G8370-85
Dimensional
outline/
Window
material *1
Package
➀/K
TO-18
➁/K
TO-5
➂/K
TO-8
Active area
(mm)
φ1
φ2
φ3
φ5
Reverse
voltage
VR Max.
(V)
5
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
2
-40 to +85
-55 to +125
1
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Peak
Spectral
sensitivity
response
wavelength
range
λp
Photo
sensitivity
S
Dark
current
ID
VR=1 V
C ut-off
Terminal
frequency
Shunt
capacitance
fc
resistance
Ct
VR=1 V
Rsh
VR=1 V
R L = 50 Ω
V R =10 mV
f=1 M H z
-3 dB
PDL
λ=λp
D∗
λ=λp
1.3 µm
λ=λp
Min. Typ. Min. Typ. Typ. Max.
Typ. Max.
(µm)
(µm) (A/W) (A/W) (A/W) (A/W) (nA) (nA) (MHz)
(pF)
(MΩ) (mdB) (mdB) (cm· Hz 1/2 /W)
G8370-81
1
5
35
90
100
4
550
G8370-82
5
25
25
5
10 5 × 1012
0.9 to 1.7 1.55 0.8 0.9 0.85 1.1
2
1000
G8370-83
15 75
10
0.6
3500
3
G8370-85
25 *2 125 * 2
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
*2: VR=0.1 V
NEP
λ=λp
(W/Hz1/2)
2 × 10-14
4 × 10-14
6 × 10-14
1 × 10-13
1
InGaAs PIN photodiode
■ Spectral response
■ Photo sensitivity temperature characteristic
(Typ. Ta=25 ˚C)
1.0
0.8
0.6
0.4
0.2
0.8
1.0
1.2
1.4
1.6
1.8
(Typ. Ta=25 ˚C)
2
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1.2
0
0.6
G8370-81/-82/-83/-85
1
0
-1
0.8
2.0
WAVELENGTH (µm)
1.0
1.2
1.4
1.6
1.8
WAVELENGTH (µm)
KIRDB0374EA
■ Photo sensitivity linearity
100
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
98
G8370-82
96
G8370-83
94
G8370-85
1 nF
G8370-82
100 pF
G8370-81
10 pF
92
90
0
2
6
4
8
10
12
14
1 pF
0.01
16
INCIDENT LIGHT LEVEL (mW)
■ Shunt resistance vs. ambient temperature
(Typ. VR=10 mV)
10 GΩ
G8370-81
1 GΩ
G8370-82
100 MΩ
G8370-83
10 MΩ
G8370-85
1 MΩ
100 kΩ
-40
-20
0
20
40
60
80
0.1
1
10
100
REVERSE VOLTAGE (V)
KIRDB0298EA
SHUNT RESISTANCE
G8370-83
G8370-85
G8370-81
TERMINAL CAPACITANCE
RELATIVE SENSITIVITY (%)
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω, VR=0 V)
102
100
AMBIENT TEMPERATURE (˚C)
KIRDB0300EA
2
KIRDB0042EA
KIRDB0299EA
InGaAs PIN photodiode
G8370-81/-82/-83/-85
■ Dimensional outlines (unit: mm)
➀ G8370-81
➁ G8370-82/-83
5.4 ± 0.2
9.2 ± 0.2
4.7 ± 0.1
2.5 ± 0.2
4.9 ± 0.2
0.45
LEAD
2.5 ± 0.2
0.45
LEAD
18 MIN.
PHOTOSENSITIVE
SURFACE
0.4 MAX.
WINDOW
4.5 MIN.
13 MIN.
PHOTOSENSITIVE
SURFACE
3.7 ± 0.2
8.3 ± 0.1
2.6 ± 0.2
WINDOW
2.2 MIN.
5.1 ± 0.3
1.5 MAX.
CASE
CASE
KIRDB0189EA
KIRDA0155EB
➂ G8370-85
13.8 ± 0.2
0.45
LEAD
14 MIN.
2.8 ± 0.2
0.5
PHOTOSENSITIVE
SURFACE
4.9 ± 0.2
12.4 ± 0.1
WINDOW
7.0 MIN.
7.5 ± 0.2
INDEX MARK
1.0
CASE
KIRDA0052EC
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1064E04
May 2006 DN
3
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