Diodes DMN3200U N-channel enhancement mode field effect transistor Datasheet

DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
Low On-Resistance

90mΩ @ VGS = 4.5V

110mΩ @ VGS = 2.5V

200mΩ @ VGS = 1.5V
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish  Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
ESD Protected Gate
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
SOT23
D
D
G
S
G
ESD PROTECTED TO 3kV
Gate Protection
Diode
Top View
S
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN3200U-7
SOT23
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YM
NEW PRODUC
•
Mechanical Data
32N
Date Code Key
Year
Code
2007
U
Month
Code
Jan
1
~
~
Feb
2
DMN3200U
Document number: DS31188 Rev. 7 - 2
2016
D
Mar
3
Apr
4
32N = Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
2017
E
May
5
2018
F
Jun
6
1 of 6
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2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
May 2016
© Diodes Incorporated
DMN3200U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±8
V
ID
2.2
A
IDM
9
A
Symbol
Value
Units
PD
650
mW
RθJA
192
°C/W
TJ, TSTG
-55 to +150
°C
NEW PRODUC
Drain Current (Note 5)
Pulsed Drain Current (Note 5)
Units
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
30


V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1
µA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS


±5
µA
VGS = ±8V, VDS = 0V
VGS(TH)
0.45

1.0
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 2.2A
RDS(ON)

62
70
150
90
110
200
mΩ
Forward Transfer Admittance
|Yfs|

5

S
VDS = 5V, ID = 2.2A
Diode Forward Voltage (Note 6)
VSD


0.9
V
VGS = 0V, IS = 1A
Input Capacitance
Ciss

290

pF
Output Capacitance
Coss

66

pF
Static Drain-Source On-Resistance
VGS = 2.5V, ID = 2A
VGS = 1.5V, ID = 0.67A
DYNAMIC CHARACTERISTICS (Note 7)
Crss

35

pF
tD(ON)

40.2

ns
Turn-On Rise Time
tR

43.1

ns
Turn-Off Delay Time
tD(OFF)

471

ns
tF

104

ns
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Fall Time
Notes:
VDS = 10V, VGS = 0V
f = 1.0MHz
VDD = 10V, ID = 2A, VGEN = 4.5V,
RL = 5Ω, RGEN = 6Ω
5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN3200U
Document number: DS31188 Rev. 7 - 2
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May 2016
© Diodes Incorporated
DMN3200U
20
10
VVGS
4.5V
GS = 4.5V
VVGS
= 2.0V
GS = 2.0V
)A
(
T
N
E
R
R
U
C
N
I
A
R
D
,D
I
12
VGS = 1.5V
VGS
= 1.5V
8
4
8
7
6
5
4
3
2
VVGS =
1.2V
GS = 1.2V
0
1
2
3
4
DRAIN -SOURCE
VOLTAGE
(V)
DS, ,DRAIN-SOURCE
VVDS
VOLTAGE
(V)
Figure
1 Typical
OutputCharacteristics
Characteristics
Fig. 1 Typical
Output
TA = 150°C
1
VVGS == 1.0V
1.0V
GS
0
TA = 85°C
0
0.5
5
1
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
VDS = 5V
Pulsed
9
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
V
= 2.5V
VGS
GS = 2.5V
VGS =
4.0V
V
GS = 4.0V
16
TA = 25°C
TA = -55°C
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
1.8
1.6
1.4
VGS = 1.5V
0.1
VGS = 2.5V
1.2
VGS = 4.5V
1.0
0.8
0.6
0.01
0.01
0.1
1
10
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
1.0
0.8
ID = 250µA
C, CAPACITANCE (pF)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,H
)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUC
VGS = 3.0V
VGS
= 3.0V
0.6
0.4
Ciss
Coss
0.2
Crss
T
(S
G
V
0
-50
-25
0
25
50
75 100 125 150
TA , AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN3200U
Document number: DS31188 Rev. 7 - 2
3 of 6
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0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
30
May 2016
© Diodes Incorporated
DMN3200U
100
10
ID , DRAIN CURRENT (A)
1
)A
(
T
N
E
R
0.1
R
U
C
E
C
R 0.01
U
O
S
,S
I
0.001
IS, SOURCE CURRENT (A)
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1
T J(ma x) = 150°C
PW = 100µs
T A = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
TA = -55°C
0.01
0.1
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD ,SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
1
10
V
VDS
VOLTAGE(V)
(V)
DS , DRAIN-SOURCE VOLTAGE
Figure
SOA, Safe
Safe Operation
Fig. 88SOA,
OperationArea
Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUC
RDS(on)
Limited
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 188°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
DMN3200U
Document number: DS31188 Rev. 7 - 2
0.001
0.01
0.1
1
t1,t1,PULSE
(sec)
PULSEDURATION
DURATION TIMES
TIME (sec)
Figure
Transient
Thermal
Resistance
Fig. 15
9 Transient
Thermal
Resistance
4 of 6
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10
100
1,000
May 2016
© Diodes Incorporated
DMN3200U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
NEW PRODUC
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
G
F
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
C
Y1
X
DMN3200U
Document number: DS31188 Rev. 7 - 2
Dimensions
Value (in mm)
C
2.0
X
X1
Y
0.8
1.35
0.9
Y1
2.9
X1
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DMN3200U
IMPORTANT NOTICE
NEW PRODUC
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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DMN3200U
Document number: DS31188 Rev. 7 - 2
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