IXYS IXSX50N60AU1S Igbt with diode combi pack - short circuit soa capability Datasheet

Preliminary data
VCES = 600 V
IXSX50N60AU1
= 75 A
IXSX50N60AU1S I C25
VCE(sat) = 2.7 V
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
Symbol
TO-247 Hole-less SMD
(50N60AU1S)
Test Conditions
C (TAB)
G
Maximum Ratings
E
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C, limited by leads
75
A
IC90
TC = 90°C
50
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, R G = 22 Ω
Clamped inductive load, L = 30 µH
ICM = 100
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 22 Ω, non repetitive
10
µs
PC
TC = 25°C
C (TAB)
G
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
6
g
300
°C
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Test Conditions
l
l
l
l
l
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC
= 3 mA, VGE = 0 V
600
VGE(th)
IC
= 4 mA, VCE = VGE
4
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
V
l
l
l
TJ = 25°C
TJ = 125°C
8
V
750
15
µA
mA
±100
nA
2.7
V
l
Hole-less TO-247 package for clip
mounting
High current rating
Guaranteed Short Circuit SOA
capability
High frequency IGBT and antiparallel FRED in one package
Low V CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
l
l
© 1997 IXYS All rights reserved
C = Collector,
TAB = Collector
Applications
l
BVCES
E
Features
l
Symbol
C
G = Gate,
E = Emitter,
l
300
TJ
TO-247 Hole-less
(50N60AU1)
Space savings (two devices in one
package)
High power density
97512 (5/97)
IXSX50N60AU1
Symbol
Test Conditions
gfs
I C = I C90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
20
23
190
Qg
Q ge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
IXSX50N60AU1S
Inductive load, TJ = 25°°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = 2.7 Ω
S
250
60
nC
88
120
nC
70
ns
220
ns
400
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES , higher TJ or
increased RG
nC
45
200
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES , higher TJ or
increased RG
ns
600
ns
6
mJ
70
ns
230
ns
4.5
mJ
340
ns
400
ns
7
mJ
RthJC
TO-247 HOLE-LESS
0.42 K/W
RthCK
0.15
K/W
TO-247 HOLE-LESS SMD
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I RM
trr
IF = IC90, VGE = 0 V, -diF /dt = 480 A/µs
VR = 360 V
TJ = 125°C
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C
RthJC
19
175
35
1.8
V
33
A
ns
ns
50
0.75 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXSX50N60AU1
Fig.1 Saturation Characteristics
80
TJ = 25°C
Fig.2 Output Characterstics
200
13V
VGE = 15V
T J = 25°C
180
70
VGE = 15V
160
60
11V
50
IC - Amperes
IC - Amperes
IXSX50N60AU1S
40
30
20
9V
3
4
80
11V
60
9V
7V
0
0
2
100
20
7V
1
13V
120
40
10
0
140
5
0
2
4
6
VCE - Volts
Fig. 4
VCE(sat) - Normalized
8
7
VCE - Volts
VGE=15V
1.4
6
5
IC = 80A
4
IC = 40A
3
2
IC = 20A
1
9
10
IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
0
8
Temperature Dependence
of Output Saturation Voltage
1.5
T J = 25°C
9
10 12 14 16 18 20
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
8
11
12
13
14
0.7
-50
15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig.5 Input Admittance
Fig.6
Temperature Dependence of
Breakdown and Threshold Voltage
1.3
80
VCE = 10V
BV / V GE(th) - Normalized
70
IC - Amperes
60
50
40
TJ = 25°C
30
TJ = 125°C
20
TJ = - 40°C
10
0
4
5
6
7
8
9
VGE - Volts
© 1997 IXYS All rights reserved
10
11
12
13
BVCES
1.2
IC = 3mA
1.1
1.0
0.9
VGE8th)
0.8
0.7
-50
IC = 4mA
-25
0
25
50
75
TJ - Degrees C
100 125 150
IXSX50N60AU1
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
1000
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
12
1000
10
T J = 125°C
IC = 50A
T J = 125°C
RG = 10Ω
800
500
6
tfi
250
3
0
600
400
4
200
2
0
10
20
30
40
50
60
70
6
tfi
0
80
Eoff - millijoules
E off
8
Eoff
tfi - nanoseconds
9
Eoff - millijoules
tfi - nanoseconds
750
0
IXSX50N60AU1S
0
0
10
20
IC - Amperes
30
40
50
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
1000
15
IC = 50A
V CE = 480V
100
T J = 125°C
IC - Amperes
VGE - Volts
12
9
6
RG = 22Ω
10
dV/dt < 6V/ns
1
0.1
3
0.01
0
0
50
100
150
200
250
0
100
Qg - nCoulombs
200
300
400
500
600
700
VCE - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
Diode
0.1
IGBT
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXSX50N60AU1
Fig.13
180
20
1000
T J = 125°C
160
120
100
TJ = 100°C
80
60
TJ = 150°C
40
0
0.5
800
12
600
8
400
4
TJ = 25°C
20
0
1.0
1.5
2.0
2.5
200
tfr
0
200
400
Voltage Drop - Volts
1.4
VFR
IF = 60A
16
140
VFR - Volts
Current - Amperes
Peak Forward Voltage VFR and
Forward Recovery Time tfr
600
800
1000
0
1200
diF /dt - A/µs
Fig.14 Junction Temperature Dependence
off IRM and Qr
Fig.15 Reverse Recovery Chargee
5
TJ = 100°C
VR = 350V
Qr - nanocoulombs
Normalized IRM / Qr
1.2
1.0
0.8
IRM
0.6
Qr
0.4
4 I = 60A
F
3
2
1
0.2
0.0
0
0
40
80
120
160
1
10
TJ - Degrees C
Fig.17 Reverse Recovery Time
80
800
T J = 100°C
TJ = 100°C
VR = 350V
VR = 350V
IF = 60A
trr - nanoseconds
IRM - Amperes
1000
diF /dt - A/µs
Fig.16 Peak Reverse Recovery Current
60
100
40
max
20
0
IF = 60A
600
400
200
0
200
400
600
diF /dt - A/µs
© 1997 IXYS All rights reserved
800
1000
0
200
400
diF /dt - A/µs
600
tfr - nanoseconds
Fig.12 Typical Forward Voltage Drop
IXSX50N60AU1S
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