ON BC517 Darlington transistors(npn silicon) Datasheet

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by BC517/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR 1
BASE
2
EMITTER 3
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
30
Vdc
Collector – Base Voltage
VCB
40
Vdc
Emitter – Base Voltage
Collector – Emitter Voltage
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
VEB
10
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
625
12
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0)
V(BR)CES
30
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
V(BR)EBO
10
—
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
—
—
500
nAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
—
100
nAdc
OFF CHARACTERISTICS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Typ
Max
Unit
hFE
30,000
—
—
—
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
—
1.0
Vdc
Base – Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
—
1.4
Vdc
fT
—
200
—
MHz
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
2. fT = |hfe| • ftest
v 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
100
10 µA
50
100 µA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 µA
0.1
0.07
0.05
10 µA
0.03
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
0.02
10 20
50 k 100 k
50 100 200
50 k 100 k
Figure 3. Noise Current
200
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 µA
70
50
100 µA
30
20
1.0 mA
10
1.0
2.0
10
10 µA
8.0
100 µA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
Figure 4. Total Wideband Noise Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
1.0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
Figure 5. Wideband Noise Figure
3
BC517
SMALL–SIGNAL CHARACTERISTICS
20
|h fe |, SMALL–SIGNAL CURRENT GAIN
4.0
TJ = 25°C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
hFE, DC CURRENT GAIN
TJ = 125°C
25°C
30 k
20 k
10 k
7.0 k
5.0 k
– 55°C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
0.6
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
4
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (µA)
500 1000
Figure 9. Collector Saturation Region
1.6
10
2.0
3.0
Figure 8. DC Current Gain
5.0 7.0
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
500
– 1.0
– 2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
– 55°C TO 25°C
– 3.0
25°C TO 125°C
– 4.0
qVB FOR VBE
– 5.0
– 55°C TO 25°C
– 6.0
5.0 7.0 10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 11. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC517
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25°C
TC = 25°C
100 µs
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
40
+ t1 f + ttP1
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
BC517
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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6
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BC517/D
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