BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP720 BFP720, Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2012-10-19, Revision 1.1 Page Subjects (changes since previous revision) This data sheet replaces the revision from 2009-01-20. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the data sheet have been expanded and updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. 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Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.1, 2012-10-19 BFP720 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Data Sheet 4 12 12 12 13 18 Revision 1.1, 2012-10-19 BFP720 List of Figures List of Figures Figure 4-1 Figure 4-2 Figure 4-3 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load RthJS = f (tp). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP720 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms, |S21|2 = f (f), VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Matching S22 = f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance Zopt for NFmin = f (f), VCE = 3 V, IC = 5mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, GmS = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP720: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 11 11 13 18 18 19 19 20 20 21 21 22 24 24 24 24 Revision 1.1, 2012-10-19 BFP720 List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Table 5-10 Table 5-11 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision 1.1, 2012-10-19 BFP720 Product Brief 1 Product Brief The BFP720 is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 25 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. Data Sheet 7 Revision 1.1, 2012-10-19 BFP720 Features 2 • • • • • • • • • Features High performance general purpose wideband LNA transistor Operation voltage: 1.0 V to 4.0 V Transistor geometry optimized for low-current applications 26 dB maximum stable gain at 1.9 GHz and only 13 mA 15 dB maximum available gain at 10 GHz and only 13 mA 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz High linearity OP1dB = 8.5 dBm and OIP3 = 23 dBm at 5.5 GHz and low current consumption of 13 mA Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q101 available 3 2 4 1 Applications FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone, UMTS, WLAN,UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP720 SOT343 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E R9s Revision 1.1, 2012-10-19 BFP720 Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage Values Min. Typ. Max. – – – – 4.0 3.5 VCEO Unit Note / Test Condition V Open base TA = 25 °C TA = -55 °C Collector emitter voltage VCES – – 13 V E-B short circuited Collector base voltage VCBO – – 13 V Open emitter Emitter base voltage VEBO – – 1.2 V Open collector Collector current IC – – 25 mA IB – – 2 mA Ptot – – 100 mW TJ – – 150 °C Base current Total power dissipation Junction temperature 1) TS ≤ 108 °C Storage temperature TStg -55 – 150 °C 1)TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point to the pcb Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.1, 2012-10-19 BFP720 Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 420 – K/W – 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 120 100 Ptot [mW] 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 4-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 10 Revision 1.1, 2012-10-19 BFP720 Thermal Characteristics 10 D= 0 D= .005 D= .01 Ptot_max / Ptot_DC D= .02 D= .05 D= .1 D= .2 D=0 D= .5 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 1 1.E-07 D=0.5 tp [sec] Figure 4-2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) 1000 RthJS [K/W] D=0.5 D= .5 D= .2 D= .1 D= .05 D= .02 D= .01 D= .005 D=0 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 100 1.E-07 D= 0 tp [sec] Figure 4-3 Permissible Pulse Load RthJS = f (tp) Data Sheet 11 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Collector emitter breakdown voltage V(BR)CEO 4 4.7 – V IC = 1 mA, IB = 0 mA Collector emitter cutoff current ICES – – 30 μA VCE = 13 V, VBE = 0 V Collector base cutoff current ICBO – – 100 nA VCB = 5 V, IE = 0 mA Emitter base cutoff current IEBO – – 2 μA VEB = 0.5 V, IC = 0 mA DC current gain hFE 160 250 400 IC = 13 mA, VCE = 3 V pulse measured 5.2 General AC Characteristics Table 5-2 AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 45 – GHz IC = 13 mA, VCE = 3 V f = 1 GHz Collector base capacitance CCB – 0.06 – pF VCB = 3 V, VBE = 0 V f = 1 MHz emitter grounded Collector emitter capacitance CCE – 0.35 – pF VCE = 3 V, VBE = 0 V f = 1 MHz base grounded Emitter base capacitance CEB – 0.35 – pF VEB = 0.5 V, VCB = 0 V f = 1 MHz collector grounded Data Sheet 12 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP720 Testing Circuit Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Unit Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 34 37.5 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 23 29.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.4 28.5 – – Linearity 1 dB gain compression point 3rd order intercept point Data Sheet Note / Test Condition OP1dB OIP3 – – 6 22 13 – – IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Unit Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 29 32.5 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 23 28.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.4 28 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 5.5 21.5 – – Table 5-5 IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 26.5 29.5 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 22.5 27.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.4 26 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 5.5 21 – – Data Sheet Note / Test Condition 14 IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 24 27.5 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 22 25.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.45 24 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 6 21.5 – – Table 5-7 IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS =ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 23 26 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 21.5 24.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.45 23 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 7 22 – – Data Sheet Note / Test Condition 15 IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS =ZL = 50 Ω IC = 13 mA IC = 13 mA Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 22 25 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 20.5 23 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 21.5 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 6 22 – – Table 5-9 IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gms Gms – – 20.5 23.5 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 18.5 20 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.55 19 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 7.5 22.5 – – Data Sheet Note / Test Condition 16 IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Maximum Power Gain Low noise operation point High linearity operation point Symbol Gms Gma Values Unit Min. Typ. Max. – – 19 19.5 – – Note / Test Condition dB Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 15 16 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.7 15 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 8.5 23 – – IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. Max. dB Maximum Power Gain Low noise operation point High linearity operation point Gma Gma – – 13.5 15 – – Transducer Gain Low noise operation point High linearity operation point S21 S21 – – 9 10 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.95 10.5 – – Linearity 1 dB gain compression point 3rd order intercept point OP1dB OIP3 – – 8 19.5 – – IC = 5 mA IC = 13 mA dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA dB ZS = Zopt IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Notes 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results Data Sheet 17 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 5.4 Characteristic Curves 50 45 3V 40 2V 35 fT [GHz] 30 25 20 15 10 1V 5 0.5 V 0 1 10 100 Ic [mA] Figure 5-2 Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE = Parameter in V 42 39 36 33 30 G ms G [dB] 27 24 21 18 Gma |S |2 21 15 12 9 6 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure 5-3 Power Gain Gma, Gms, |S21|2 = f (f), VCE = 3 V, IC = 13 mA Data Sheet 18 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 0. 4 8 GHz 10 GHz 9 GHz 8 GHz 7 GHz 0 3. 0 4. 5.0 S11 @3V, 5mA 6 GHz 7 GHz 2. 0 1.0 0.8 6 0. 10 GHz 9 GHz 6 GHz Swp Max 10GHz S11 @3V, 13mA 5 GHz 0.2 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.4 0.2 0 4 GHz 0.6 10.0 5 GHz 3 GHz 4 GHz -4 .0 -5. 0 2 -10.0 -0. 2 GHz -3 .0 1 GHz 3 GHz .0 -2 1 GHz -0 .6 -0.8 2 GHz -1.0 .4 -0 Swp Min 0GHz Figure 5-4 Input Matching S11 = f (f), VCE = 3 V, IC = 5 mA / 13 mA 2. 0 6 0. 0.8 1.0 Swp Max 10GHz 0. 4 0 3. 0 4. 5.0 S22 @3V, 5mA 10 GHz 2 GHz 1 GHz 1 GHz 4 GHz .4 -0 10.0 4.0 5.0 3.0 2.0 0.8 0.6 0.4 1.0 4 GHz 3 GHz -3 .0 3 GHz .0 -2 -0.8 -0 .6 2 GHz -1.0 0.2 5 GHz 8 GHz 7 GHz 6 GHz 5 GHz -4 .0 -5. 0 8 GHz 7 GHz 6 GHz -10.0 0.2 0 10.0 9 GHz 9 GHz 2 -0. S22 @3V, 13mA Swp Min 0GHz Figure 5-5 Output Matching S22 = f (f), VCE = 3 V, IC = 5 mA / 13 mA Data Sheet 19 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 1.0 0.8 2. 0 6 0. Swp Max 10GHz 0. 4 0 3. 0 4. 5.0 2.4GHz Δ:Δ:IcIc==13mA 13mA 2 . 0 - : Ic = 5mA : Ic = 5mA -3 .0 -4 . -5. 0 0 10GHz -1.0 -0.8 .0 -2 .4 -0 -0 .6 10.0 2.0 0.8 1.0 0.6 0.4 0.2 1.9GHz 0.45GHz 5.5GHz 10.0 -10.0 0 1.9GHz 2.4GHz 3.0 4.0 5.0 0.2 5.5GHz Swp Min 0.45GHz Figure 5-6 Source Impedance Zopt for NFmin = f (f), VCE = 3 V, IC = 5mA / 13 mA 2 1.9 f = 10GHz 1.8 f = 5.5GHz 1.7 1.6 f = 2.4GHz 1.5 f = 1.9GHz 1.4 f = 0.45GHz 1.3 1.2 F [dB] 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 Ic [mA] Figure 5-7 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt Data Sheet 20 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 1.4 1.3 1.2 1.1 1 0.9 F [dB] 0.8 0.7 0.6 0.5 IC = 13mA 0.4 I = 5.0mA C 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure 5-8 Noise Figure NFmin = f (f), VCE = 3 V, ZS = Zopt 42 40 0.15GHz 38 36 0.45GHz 34 32 0.90GHz 30 1.50GHz 1.90GHz 2.40GHz G [dB] 28 26 3.50GHz 24 22 20 5.50GHz 18 16 10.00GHz 14 12 10 0 5 10 15 20 25 30 IC [mA] Figure 5-9 Power Gain Gma, GmS = f (IC), VCE = 3 V, f = Parameter in GHz Data Sheet 21 Revision 1.1, 2012-10-19 BFP720 Electrical Characteristics 40 38 0.15GHz 36 34 0.45GHz 32 30 0.90GHz 28 1.50GHz 1.90GHz 2.40GHz G [dB] 26 24 3.50GHz 22 20 5.50GHz 18 16 10.00GHz 14 12 10 8 6 0 0.5 1 1.5 2 2.5 V CE 3 3.5 4 4.5 5 [V] Figure 5-10 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves Data Sheet 22 Revision 1.1, 2012-10-19 BFP720 Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP720 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitic and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP720 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Data Sheet 23 Revision 1.1, 2012-10-19 BFP720 Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 0.6 +0.1 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 7-2 Package Footprint Date code (YM) 2005, June 56 Type code XYs Manufacturer Pin 1 Figure 7-3 Marking Description (Marking BFP720: R9s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 7-4 Tape Dimensions Data Sheet 24 Revision 1.1, 2012-10-19 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG