MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE FS18SM-9 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.33Ω ¡ID .......................................................................................... 18A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 450 ±30 V V 18 54 250 A A W –55 ~ +150 –55 ~ +150 4.8 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 450 ±30 — — — — — — ±10 V V µA VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V — 2 — — — 3 0.25 2.3 1 4 0.33 3.0 mA V Ω V 6.0 — — — 9.0 2200 300 45 — — — — S pF pF pF — — — — 40 80 200 80 — — — — ns ns ns ns — 1.5 2.0 V — — 0.50 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 250 200 150 100 50 tw=10µs 101 7 5 3 2 100µs 100 7 5 3 2 10ms 1ms DC TC = 25°C Single Pulse 10–1 0 0 50 100 150 7 5 200 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 8V 40 30 TC = 25°C Pulse Test 20 6V 10 5V 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) PD = 250W 0 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 50 DRAIN CURRENT ID (A) 7 5 3 2 20 VGS = 20V 10V 8V 16 PD = 250W 6V 12 TC = 25°C Pulse Test 8 4 5V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25°C Pulse Test 32 24 16 ID = 35A 8 25A 18A 9A 0 0 8 12 16 4 8 12 16 3 2 101 7 5 TC = 25°C 75°C 125°C 3 2 100 0 10 20 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss 103 7 5 Coss 102 7 5 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0.2 102 VDS = 10V 7 Pulse Test 5 5 3 2 20V FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 8 3 2 VGS = 10V 0.4 TRANSFER CHARACTERISTICS (TYPICAL) 16 0 0.6 DRAIN CURRENT ID (A) 24 0 0.8 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 50V Pulse Test 32 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 4 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 3 2 102 7 5 td(off) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω tf tr td(on) 3 2 101 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 100V 12 8 200V 400V 4 101 7 5 0 20 40 60 80 25°C 24 75°C 16 8 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 VGS = 0V Pulse Test GATE CHARGE Qg (nC) 3 2 10–1 TC = 125°C 32 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) 40 Tch = 25°C ID = 18A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 –1 10 0.1 7 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999