IXYS IXGT39N60BD1 Hiperfast igbt Datasheet

HiPerFASTTM IGBT
IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
VCES
IC25
VCE(sat)
tfi
=
=
=
=
600 V
76 A
1.7 V
200 ns
Preliminary data
(D1)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
76
A
IC90
TC = 90°C
39
A
ICM
TC = 25°C, 1 ms
152
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load
PC
TC = 25°C
ICM = 76
@ 0.8 VCES
A
200
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (M3)
Md
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
G
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
E
C = Collector,
TAB = Collector
Features
z
z
z
Weight
C (TAB)
C
G = Gate,
E = Emitter,
z
TO-247
C (TAB)
g
g
International standard packages
JEDEC TO-247 AD & TO-268
High current handling capability
Newest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
Symbol
BVCES
VGE(th)
ICES
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC
IC
= 250 µA, VGE = 0 V
= 750 µA
39N60B
39N60BD1
600
600
IC
IC
= 250 µA, VCE = VGE
= 500 µA
39N60B
39N60BD1
2.5
2.5
VCE = 0.8 • VCES TJ = 25°C
VGE = 0 V
TJ = 125°C
TJ = 125°C
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= I90, VGE = 15 V
© 2003 IXYS All rights reserved
39N60B
39N60B
39N60BD1
V
z
z
z
z
z
z
5.0
5.0
V
V
200
1
3
µA
mA
mA
±100
nA
1.7
V
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
z
z
High power density
Very fast switching speeds for high
frequency applications
DS97548A(02/03)
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
19
28
S
∅P
Cies
2750
pF
200
240
pF
pF
Cres
50
pF
QG
110
Coes
QGE
VCE = 25 V, VGE = 0 V, f = 1 MHz
39N60B
39N60BD1
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
QGC
td(on)
Inductive load, TJ = 25°°C
tri
Eoff
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
td(on)
Inductive load, TJ = 125°°C
td(off)
tfi
tri
Eon
td(off)
tfi
Eoff
TO-247 AD Outline
150
25
35
nC
40
75
nC
25
ns
30
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
ns
250
500
ns
200
360
ns
4.0
6.0 mJ
25
ns
30
ns
0.3
mJ
360
ns
350
ns
6.0
mJ
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
nC
RthJC
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
0.62 K/W
RthCK
0.25
Reverse Diode (FRED)
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
VF
IF = IC90, VGE = 0 V, Pulse test
t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
6
VR = 100 V
TJ = 100°C 100
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
25
TJ =150°C
TJ = 25°C
max.
1.6
2.5
V
V
A
ns
ns
0.9 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Fig. 1. Saturation Voltage
Characteristics @ 25 Deg. C
Fig. 2. Extended Output
Characteristics @ 25 Deg. C
160
40
30
25
7V
20
15
9V
100
80
60
7V
40
5
20
5V
0
5V
0
0.4
0.8
1.2
1.6
VCE - Volts
2
2.4
0
1
2
3
4
5
V CE - Volts
Fig. 3. Saturation Voltage
Characteristics @ 125 Deg. C
Fig. 4. Temperature Dependence of
VCE(SAT)
100
1.45
V GE=15V
13V
11V
9V
60
V CE(SAT) - Normalized
80
7V
40
20
IC=78A
1.3
1.15
IC =39A
1
0.85
5V
IC=19.5A
0
0.7
0
1
2
3
4
-50
5
V CE - Volts
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
Fig. 5. BVCES & V (GE)TH vs. Junction
Temperature
Fig. 6. Admittance
100
1.2
V GE(TH)
1.1
80
BV CES
IC - Amperes
BVCES & V(GE)TH - Normalized
11V
120
10
IC - Amperes
V GE=15V
13V
140
IC - Amperes
35
IC - Amperes
9V
V GE=15V
13V
11V
1
60
40
TJ= 125°C
0.8
20
-40°C
0.7
0
0.9
-50
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
© 2003 IXYS All rights reserved
25°C
4
5
6
7
VGE - Volts
8
9
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Fig. 7. Transconductance
Fig. 8. Dependence of EOFF on IC
16
50
TJ = -40ºC
25ºC
125ºC
30
20
10
12
V CE = 480V
10
8
RG = 5 Ohms
6
2
0
20
40
60
80
IC - Amperes
100
120
10
18
16
14
EOFF - milliJoules
TJ = 125ºC
10
V GE = 15V
8
V CE = 480V
6
IC = 39A
4
2
50
IC - Amperes
70
90
Solid lines - RG = 5 Ohms
15
Dashed lines - RG = 56 Ohms
V GE = 15V
12
V CE = 480V
IC = 78A
12
30
Fig. 10. Dependence of EOFF on
Temperature
Fig. 9. Dependence of EOFF on RG
IC =
78A
9
IC =
39A
6
IC =
19.5A
3
IC = 19.5A
0
0
0
10
20
30
40
50
0
60
RG - Ohm s
25
50
75
100
125
150
TJ - Degrees Centigrades
Fig. 12. Transient Thermal Response
Fig. 11. Gate Charge
1
15
V CE=300V
12
IC=20A
IG=10mA
9
R(TH)JC (C/W)
VCE - Volts
RG = 56 Ohms
V GE = 15V
4
0
EOFF - millijoules
TJ = 125ºC
14
EOFF - millijoules
GFS - Siemens
40
6
0.1
3
0
0.01
0
20
40
60
80
QG - nanocoulombs
100
120
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
60
A
50
IF
30
1000 T = 100°C
VJ
nC VR = 300V
40
TVJ=150°C
30
25
IF= 60A
IF= 30A
IF= 15A
800
Qr
TVJ= 100°C
VR = 300V
A
IF= 60A
IF= 30A
IF= 15A
IRM
20
600
15
TVJ=100°C
400
20
10
TVJ=25°C
200
10
0
0
1
0
100
3 V
2
5
0
A/µs 1000
-diF/dt
VF
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
90
2.0
1.0
IRM
1.00
µs
VFR
tfr
0.75
tfr
80
IF= 60A
IF= 30A
IF= 15A
600 A/µs
800 1000
-diF/dt
400
Fig. 14 Peak reverse current IRM
versus -diF/dt
VFR
15
trr
Kf
200
20 TVJ= 100°C
IF = 30A
V
TVJ= 100°C
VR = 300V
ns
1.5
0
10
0.50
5
0.25
70
0.5
Qr
0.0
60
0
40
80
120 °C 160
0
0
200
TVJ
400
600
800 1000
A/µs
0
400
-diF/dt
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
1
K/W
0.00
600 A/µs
800 1000
diF/dt
Fig. 17 Peak forward voltage VFR and
tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
2
3
0.1
ZthJC
0.01
0.001
0.00001
200
DSEP 29-06
0.0001
0.001
0.01
s
0.1
t
Fig. 18 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
1
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162
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