Infineon BFS17P Npn silicon rf transistor Datasheet

BFS17P
NPN Silicon RF Transistor
3
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
2
1
Type
Marking
BFS17P
MCs
Pin Configuration
1=B
2=E
VPS05161
Package
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
15
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2.5
Collector current
IC
25
Peak collector current, f = 10 MHz
ICM
50
Total power dissipation
Ptot
280
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
V
mA
TS 55 °C 1)
Thermal Resistance
Junction - soldering point 2)
RthJS
340
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
Jul-12-2001
BFS17P
Electrical Characteristics a TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
15
-
-
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-base cutoff current
µA
ICBO
VCB = 10 V, IE = 0
-
-
0.05
VCB = 25 V, IE = 0
-
-
10
-
-
100
Emitter-base cutoff current
IEBO
VEB = 2.5 V, IC = 0
DC current gain
-
hFE
IC = 2 mA, VCE = 1 V
20
-
150
IC = 25 mA, VCE = 1 V
20
70
-
-
0.1
0.4
Collector-emitter saturation voltage
VCEsat
V
IC = 10 mA, IB = 1 mA
2
Jul-12-2001
BFS17P
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
AC characteristics
Transition frequency
GHz
fT
IC = 2 mA, VCE = 5 V, f = 200 MHz
1
1.4
-
IC = 25 mA, VCE = 5 V, f = 200 MHz
1.3
2.5
-
Ccb
-
0.55
0.8
Cce
-
0.25
-
Cibo
-
1.45
-
Cobs
-
-
1.5
F
-
3.5
5
|S21e|2
-
12.7
-
V01=V02
-
100
-
mV
IP3
-
23
-
dBm
Collector-base capacitance
pF
VCB = 5 V, f = 1 MHz
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = 0 , f = 1 MHz
Output capacitance
VCE = 5 V, VBE = 0 , f = 1 MHz
Noise figure
dB
IC = 2 mA, VCE = 5 V, f = 800 MHz,
ZS = 0 Transducer gain
IC = 20 mA, VCE = 5 V, ZS = ZL = 50 ,
f = 500 MHz
Linear output voltage
IC = 14 mA, VCE = 5 V, dim = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Third order intercept point
IC = 14 mA, VCE = 5 V, ZS =ZSopt , ZL =ZLopt ,
f = 800 MHz
3
Jul-12-2001
BFS17P
Total power dissipation Ptot = f(TS)
320
mW
P tot
240
200
160
120
80
40
0
0
15
30
45
60
75
90 105 120
°C 150
TS
Permissible Pulse Load
Permissible Pulse Load RthJS = f (tp )
Ptotmax/P totDC = f (tp)
10 2
Ptotmax / PtotDC
10 3
RthJS
K/W
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Jul-12-2001
BFS17P
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
f = 1MHz
V CE = Parameter
1.3
3.0
pF
1.1
10V
GHz
5V
3V
0.9
2.0
fT
Ccb
1.0
0.8
2V
0.7
1.5
0.6
0.5
1.0
0.4
0.3
1V
0.5
0.2
0.7V
0.1
0.0
0
4
8
12
16
20
V
0.0
0
26
VCB
5
10
15
20
mA
30
IC
5
Jul-12-2001
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