NE3516S02 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Rev.1.00 Apr 16, 2012 FEATURES Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) 4-pin Micro-X plastic (S02) package APPLICATIONS X to Ku band DBS LNB Other Ku band communication system ORDERING INFORMATION Part Number Order Number NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-T1D-A Package Quantity Marking S02 package (Pb-Free) 2 kpcs/reel P Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3516S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Drain to Source Voltage Symbol VDS Ratings 4.0 Unit V Gate to Source Voltage Drain Current VGS ID –3.0 IDSS V mA Gate Current Note Total Power Dissipation IG Ptot 100 165 A mW Channel Temperature Storage Temperature Tch Tstg +125 –65 to +125 C C Note: Mounted on 1.08 cm 1.0 mm (t) glass epoxy PWB 2 RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Symbol MIN. TYP. MAX. Unit Drain to Source Voltage Drain Current Parameter VDS ID +1 5 +2 10 +3 15 V mA Input Power Pin – – 0 dBm CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 1 of 9 NE3516S02 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cut-off Voltage Transconductance Noise Figure Associated Gain Symbol Test Conditions MIN. TYP. MAX. Unit IGSO IDSS VGS = 3.0 V VDS = 2 V, VGS = 0 V 15 0.5 30 10 60 A mA VGS(off) gm VDS = 2V, ID = 100 A VDS = 2 V, ID = 10 mA 0.2 55 0.5 65 1.3 V mS 13 0.35 14 0.50 dB dB NF Ga VDS = 2 V, ID = 10 mA, f = 12 GHz STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25C, unless otherwise specified) Parameter Noise Figure Associated Gain R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Symbol NF Ga Test Conditions VDS = 2 V, ID = 6 mA, f = 12 GHz Reference Value 0.35 Unit dB 13.5 dB Page 2 of 9 NE3516S02 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Remark The graph indicates nominal characteristics. R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 3 of 9 NE3516S02 S-PARAMETERS R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 4 of 9 NE3516S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 5 of 9 NE3516S02 PACKAGE DIMENSIONS S02 (UNIT: mm) R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 7 of 9 NE3516S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 8 of 9 NE3516S02 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Page 9 of 9 Revision History NE3516S02 Data Sheet Description Rev. 1.00 Date Apr 16, 2012 Page – Summary First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1