IXYS IXFL32N120P Polar hiperfet power mosfet Datasheet

Preliminary Technical Information
PolarTM HiPerFETTM
Power MOSFET
IXFL32N120P
VDSS
ID25
RDS(on)
trr
( Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
1200V
24A
Ω
340mΩ
300ns
ISOPLUS i5-PakTM
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
1200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1200
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
24
A
IDM
TC = 25°C, Pulse Width Limited by TJM
100
A
IA
TC = 25°C
16
A
EAS
TC = 25°C
2
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
520
W
-55 ... +150
°C
TJM
150
°C
z
Tstg
-55 ... +150
°C
z
TJ
=
=
≤
≤
Maximum Ratings
TL
Maximum Lead Temperature for Soldering
300
°C
TSOLD
Plastic Body for 10s
260
°C
VISOL
50/60 Hz, RMS, 1 minute
IISOL ≤ 1mA
t = 1s
2500
3000
V~
V~
FC
Mounting Force
40..120/4.5..27
N/lb.
8
g
Weight
G
S
Isolated Tab
D
G = Gate
S = Source
D
= Drain
Features
z
Silicon Chip on Direct-Copper-Bond
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
Avalanche Rated
Fast Intrinsic Diode
Advantages
z
z
z
Easy Assembly
Space Savings
High Power Density
Applications
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
1200
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS , VGS = 0V
Note 2, TJ = 125°C
RDS(on)
VGS = 10V, ID = 16A, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
V
6.5
V
± 300
nA
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
50 μA
5 mA
340 mΩ
DS99908B(01/10)
IXFL32N120P
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
17
VDS = 20V, ID = 16A, Note 1
29
S
21
nF
1105
pF
77
pF
0.84
Ω
70
ns
62
ns
88
ns
51
ns
360
nC
130
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate input resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A
Qgd
RthJC
0.15
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
trr
QRM
IRM
Notes:
IF = IS, VGS = 0V, Note 1
INCHES
MIN
MAX
MILLIMETER
MIN
MAX
0.190
0.205
4.83
0.102
0.118
2.59
3.00
nC
A2
0.046
0.055
1.17
1.40
b
0.045
0.055
1.14
1.40
0.24 °C/W
b1
0.063
0.072
1.60
1.83
°C/W
b2
0.058
0.068
1.47
1.73
c
0.020
0.029
0.51
0.74
D
1.020
1.040
25.91
26.42
E
0.770
0.799
19.56
20.29
e
0.150 BSC
e1
L
0.450 BSC
0.780
0.820
5.21
3.81 BSC
11.43 BSC
19.81
20.83
L1
0.080
0.102
2.03
2.59
32
A
Q
0.210
0.235
5.33
5.97
128
A
Q1
0.490
0.513
12.45
13.03
R
0.150
0.180
3.81
4.57
R1
0.100
0.130
2.54
3.30
S
0.668
0.690
16.97
17.53
1.5
V
300 ns
T
0.801
0.821
20.34
20.85
1.9
μC
U
0.065
0.080
1.65
2.03
15.0
A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
SYM
A
Characteristic Values
Min.
Typ.
Max.
IS
PIN 1 = Gate
PIN 2 = Source
PIN 3 = Drain
Tap 4 = Electricall isolated 2500V
A1
160
RthCS
ISOPLUS i5-PakTM (IXFL) Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFL32N120P
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
70
32
VGS = 10V
9V
28
60
24
50
8V
20
ID - Amperes
ID - Amperes
VGS = 10V
9V
16
12
40
8V
30
20
8
7V
10
4
0
7V
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
32
25
30
3.0
VGS = 10V
8V
28
VGS = 10V
2.6
R DS(on) - Normalized
24
ID - Amperes
20
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.
Junction Temperature
Fig. 3. Output Characteristics T J = 125ºC
20
16
7V
12
8
2.2
I D = 32A
1.8
I D = 16A
1.4
1.0
0.6
6V
4
0
0.2
0
2
4
6
8
10
12
14
16
18
20
22
-50
-25
0
VDS - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 16A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
28
VGS = 10V
2.4
24
TJ = 125ºC
2.2
20
2.0
ID - Amperes
R DS(on) - Normalized
15
VDS - Volts
VDS - Volts
1.8
1.6
16
12
1.4
8
TJ = 25ºC
1.2
4
1.0
0.8
0
0
10
20
30
40
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
50
60
70
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFL32N120P
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
70
TJ = - 40ºC
45
60
40
50
30
TJ = 125ºC
25ºC
- 40ºC
25
25ºC
g f s - Siemens
ID - Amperes
35
20
40
125ºC
30
15
20
10
10
5
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
5
10
15
20
VGS - Volts
25
30
35
40
45
50
400
450
500
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
100
16
90
14
VDS = 600V
I D = 16A
80
I G = 10mA
12
VGS - Volts
IS - Amperes
70
60
50
TJ = 125ºC
40
10
8
6
TJ = 25ºC
30
4
20
2
10
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
50
100
VSD - Volts
150
200
250
300
350
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forwar-Bias Safe Operating Area
100,000
1000
100
Ciss
10,000
25µs
ID - Amperes
Capacitance - PicoFarads
RDS(on) Limit
1,000
Coss
100µs
10
1ms
1
10ms
100ms
100
TJ = 150ºC
Tc = 25ºC
Single Pulse
0.1
Crss
f = 1 MHz
10
DC
0.01
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
1,000
VDS - Volts
10,000
IXFL32N120P
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z(th)JC - ºC / W
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_32N120P(99)1-22-10-C
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