IXYS IXTP76P10T Trenchp power mosfet Datasheet

IXTA76P10T
IXTP76P10T
IXTH76P10T
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
VDSS
ID25
=
=
≤
RDS(on)
D
- 100V
- 76A
Ω
25mΩ
TO-263 AA (IXTA)
G
G
S
S
D (Tab)
TO-220AB (IXTP)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
- 100
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 100
V
VGSS
Continuous
±15
V
VGSM
Transient
±25
V
DS
ID25
TC = 25°C
- 76
A
TO-247 (IXTH)
IDM
TC = 25°C, Pulse Width Limited by TJM
- 230
A
IA
EAS
TC = 25°C
TC = 25°C
- 38
1
A
J
PD
TC = 25°C
298
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13 /10
Nm/lb.in.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247
G
G
D
S
G = Gate
S = Source
D (Tab)
D (Tab)
D
= Drain
Tab = Drain
Features
z
International Standard Packages
Avalanche Rated
z
Extended FBSOA
z
Fast Intrinsic Diode
z
Low RDS(ON) and QG
z
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = - 250μA
-100
VGS(th)
VDS = VGS, ID = - 250μA
- 2.0
IGSS
VGS = ±15V, VDS = 0V
±100 nA
IDSS
VDS = VDSS, VGS = 0V
- 15 μA
- 750 μA
RDS(on)
TJ = 125°C
VGS = -10V, ID = 0.5 • ID25, Note 1
z
z
V
- 4.0
V
25 mΩ
z
Applications
z
z
z
z
z
z
© 2013 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS100024B(01/13)
IXTA76P10T IXTP76P10T
IXTH76P10T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = -10V, ID = 0.5 • ID25, Note 1
35
Ciss
VGS = 0V, VDS = - 25V, f = 1MHz
Coss
Crss
td(on)
Resistive Switching Times
tr
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1Ω (External)
tf
Qg(on)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgs
Qgd
58
S
13.7
nF
890
pF
275
pF
25
ns
40
ns
52
ns
20
ns
197
nC
65
nC
65
nC
0.42 °C/W
RthJC
TO-220
TO-247
RthCS
0.50
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 38A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 38A, -di/dt = -100A/μs
VR = - 50V, VGS = 0V
1:
Pins:
1 - Gate
2 - Drain
3 - Source
°C/W
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
Note
TO-247 Outline
70
215
-6
- 76
A
- 304
A
-1.3
V
ns
nC
A
TO-220 Outline
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
Pins:
1 - Gate
3 - Source
2 - Drain
Pins:
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA76P10T IXTP76P10T
IXTH76P10T
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
-80
-280
VGS = -10V
- 9V
- 8V
-70
VGS = -10V
-50
- 6V
-40
- 8V
-200
- 7V
ID - Amperes
ID - Amperes
-60
-30
-160
- 7V
-120
-80
-20
-10
- 6V
- 5V
-40
- 5V
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
0
-2
-5
-10
-20
-25
-30
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = - 38A Value vs.
Junction Temperature
2.0
VGS = -10V
- 9V
- 8V
- 7V
-60
VGS = -10V
1.8
R DS(on) - Normalized
-70
- 6V
-50
-40
-30
- 5V
-20
1.6
I D = - 76A
I D = - 38A
1.4
1.2
1.0
0.8
-10
0
0.6
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
-2.8
-3.2
-50
-25
0
VDS - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 38A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.2
-80
VGS = -10V
2.0
-70
TJ = 125ºC
-60
1.8
ID - Amperes
R DS(on) - Normalized
-15
VDS - Volts
-80
ID - Amperes
- 9V
-240
1.6
1.4
1.2
TJ = 25ºC
1.0
-50
-40
-30
-20
-10
0
0.8
0
-40
-80
-120
-160
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-200
-240
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTA76P10T IXTP76P10T
IXTH76P10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
100
-140
TJ = - 40ºC
-120
80
25ºC
TJ = 125ºC
25ºC
- 40ºC
-80
g f s - Siemens
ID - Amperes
-100
-60
125ºC
60
40
-40
20
-20
0
-3.0
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
-20
-40
-60
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-100
-120
-140
-160
Fig. 10. Gate Charge
-10
-240
VDS = - 50V
-9
-200
I D = - 38A
-8
I G = -1mA
-7
VGS - Volts
-160
IS - Amperes
-80
ID - Amperes
-120
TJ = 125ºC
-80
-6
-5
-4
-3
TJ = 25ºC
-2
-40
-1
0
-0.4
0
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
-1.5
0
20
40
60
VSD - Volts
80
100
120
140
160
180
200
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
- 1,000
f = 1 MHz
RDS(on) Limit
10,000
- 100
Ciss
ID - Amperes
Capacitance - PicoFarads
1ms
100µs
25µs
10ms
100ms
DC
- 10
1,000
Coss
TJ = 150ºC
TC = 25ºC
Single Pulse
Crss
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
-1
-1
- 10
VDS - Volts
-100
IXTA76P10T IXTP76P10T
IXTH76P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
44
44
RG = 1Ω, VGS = -10V
40
40
t r - Nanoseconds
t r - Nanoseconds
VDS = - 50V
36
I
32
D
= - 38A
28
I
D
TJ = 25ºC
36
RG = 1Ω, VGS = -10V
VDS = - 50V
32
28
= - 76A
24
TJ = 125ºC
24
20
20
25
35
45
55
65
75
85
95
105
115
125
-36
-40
-44
-48
-52
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
-72
tf
70
80
50
td(off) - - - -
70
22
65
VDS = - 50V
21
60
20
55
I D = - 38A
19
50
I D = - 76A
18
45
t d(off) - Nanoseconds
120
40
30
17
0
2
4
6
8
10
12
14
16
18
40
16
10
0
25
20
35
45
55
24
tf
td(off) - - - -
tf
160
50
19
46
TJ = 125ºC, 25ºC
18
42
17
38
16
34
-52
-56
-60
-64
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-68
-72
-76
t f - Nanoseconds
20
-48
115
35
125
td(off) - - - 240
VDS = - 50V
I D = - 38A, - 76A
120
180
80
120
40
60
0
0
0
2
4
6
8
10
RG - Ohms
12
14
16
18
20
t d(off) - Nanoseconds
54
t d(off) - Nanoseconds
21
-44
105
TJ = 125ºC, VGS = -10V
58
VDS = - 50V
-40
95
300
62
RG = 1Ω, VGS = -10V
-36
85
200
66
22
75
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
23
65
TJ - Degrees Centigrade
RG - Ohms
t f - Nanoseconds
-76
RG = 1Ω, VGS = -10V
t f - Nanoseconds
I D = - 76A, - 38A
VDS = - 50V
-68
75
23
90
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGS = -10V
-64
24
110
160
-60
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
200
tr
-56
ID - Amperes
IXTA76P10T IXTP76P10T
IXTH76P10T
Fig. 19. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_76P10T(A6)11-08-10-A
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