MA-COM MASWSS0161 High power gaas spdt switch dc - 2.0 ghz Datasheet

MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V3
Functional Schematic
Features
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Positive Supply and Control Voltages
1 dB Compression Point: +36 dBm Typical, 8 V
3rd Order Intercept Point: +65 dBm Typical, 8 V
Low Insertion Loss: 0.4 dB Typical
Low Power Consumption: 100 µW
Fast Switching Speed
Lead-Free SOIC-8 Plastic Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Re-flow Compatible
RoHS* Compliant Version of SW-277
8
7
6
5
1
2
3
4
Description
M/A-COM’s MASWSS0161 is a GaAs MMIC SPDT
switch in a lead free SOIC-8 lead surface mount
plastic package. The MASWSS0161 is ideally suited
for use where low power consumption is required.
Typical applications include transmit/receive switching, switch matrices and switched filter banks in systems such as radio and cellular equipment, PCM,
GPS, fiber optic modules, and other battery powered
radio equipment.
The MASWSS0161 is fabricated using a monolithic
GaAs MMIC using a mature 1 micron process. The
process features full chip passivation for increased
performance and reliability.
Pin Configuration
Pin No.
Description
Pin No.
Description
1
Ground, Thermal
Contact
5
RF Port 1 3
2
VDD
6
Control A
3
RFC
7
Control B
4
Ground, Thermal
Contact
8
RF Port 2 3
3. External DC blocking capacitors required on all RF ports.
Absolute Maximum Ratings 4,5
Ordering Information 1
Parameter
Absolute Maximum
+37 dBm
+40 dBm
+42 dBm
1.0 W
Part Number
Package
MASWSS0161
Bulk Packaging
Input Power - 0.5 - 2.0 GHz
5 V Control and Supply
8 V Control and Supply
10 V Control and Supply
MASWSS0161TR
1000 piece reel
Power Dissipation
1. Reference Application Note M513 for reel size information.
Truth Table 2
Control
Inputs
Condition of Switch
RF Common to Each RF Port
A
B
RF1
RF2
1
0
Off
On
0
1
On
Off
2. “0” = 0 to +0.2 V @ 20 mA maximum.
“1” = +5 V @ 20 mA typical to 10 V @ 500 mA maximum.
1
3
Supply Voltage
-1 V ≤ VDD ≤ + 12 V
Control Voltage
-1 V ≤ VC ≤ VDD + 0.2 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
Thermal Resistance
4.
5.
6.
6
θjc = 87°C/W
Exceeding any one or combination of these limits may cause
permanent damage to this device.
M/A-COM does not recommend sustained operation near
these survivability limits.
Thermal resistance is given for TA = 25°C. TCASE is the
temperature of leads 1 and 4.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V3
Electrical Specifications 7: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm
Parameter
Test Conditions
Units
Min.
Typ.8
Max.
Insertion Loss
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
dB
—
—
—
0.45
0.55
0.6
—
0.65
—
Isolation
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
dB
—
27
—
30
32
27
—
—
—
VSWR
DC - 2.0 GHz
Ratio
—
1.2:1
—
1 dB Compression
Input Power (5 V Supply/Control) 0.9 GHz
Input Power (8 V Supply/Control) 0.9 GHz
dBm
dBm
—
—
33
35.8
—
—
Trise, Tfall
10% to 90% RF, 90% to 10% RF
nS
—
30
—
Ton, Toff
50% Control to 90% RF, 50% Control to 10% RF
nS
—
35
—
Transients
In-Band
mV
—
12
—
3rd Order Intercept
Measured Relative to Input Power, two-tone up to +10 dBm
(5 V Supply/Control) 0.9 GHz
(8 V Supply/Control) 0.9 GHz
dBm
dBm
—
—
55
65
—
—
Control Current
VC = +5 V
µA
—
—
20
Supply Current
VDD = +5 V
µA
—
—
60
7. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 W impedance at all RF
ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers
under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking
capacitors are required on all RF ports.
8. Typical values listed for middle of frequency range noted.
Lead-Free SOIC-8†
† Reference Application Note M538 for lead-free solder reflow recommendations.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V3
Typical Performance Curves
Isolation
Insertion Loss
1.0
40
0.8
35
0.6
30
+25°C
-40°C
+85°C
0.4
25
+25°C
-40°C
85°C
0.2
20
0.0
0.5
1.0
1.5
2.0
15
0.5
1.0
1.5
2.0
Frequency (GHz)
Frequency (GHz)
VSWR
Compression vs. Control Voltage @ 900 MHz
2.0
40
+25°C
-40°C
+85°C
1dB
.1dB
35
1.8
30
1.6
25
1.4
20
1.2
1.0
0.5
15
1.0
1.5
2.0
Frequency (GHz)
10
3
4
5
6
7
8
9
10
Control Voltage (VDC)
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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