Intersil DG409DY Single 8-channel/differential 4-channel, cmos analog multiplexer Datasheet

DG408, DG409
®
Data Sheet
June 13, 2006
Single 8-Channel/Differential 4-Channel,
CMOS Analog Multiplexers
FN3283.8
Features
• ON Resistance (Max, 25°C). . . . . . . . . . . . . . . . . . . 100Ω
The DG408 Single 8-Channel, and DG409 Differential
4-Channel monolithic CMOS analog multiplexers are drop-in
replacements for the popular DG508A and DG509A series
devices. They each include an array of eight analog
switches, a TTL/CMOS compatible digital decode circuit for
channel selection, a voltage reference for logic thresholds
and an ENABLE input for device selection when several
multiplexers are present.
• Low Power Consumption (PD) . . . . . . . . . . . . . . . <11mW
• Fast Switching Action
- tTRANS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <250ns
- tON/OFF(EN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . <150ns
• Low Charge Injection
• Upgrade from DG508A/DG509A
• TTL, CMOS Compatible
The DG408 and DG409 feature lower signal ON resistance
(<100Ω) and faster switch transition time (tTRANS < 250ns)
compared to the DG508A or DG509A. Charge injection has
been reduced, simplifying sample and hold applications. The
improvements in the DG408 series are made possible by
using a high-voltage silicon-gate process. An epitaxial layer
prevents the latch-up associated with older CMOS
technologies. Power supplies may be single-ended from +5V
to +34V, or split from ±5V to ±20V.
• Single or Split Supply Operation
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Data Acquisition Systems
• Audio Switching Systems
• Automatic Testers
The analog switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with
analog signals is quite low over a ±5V analog input range.
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Analog Selector Switch
Ordering Information
PART
NUMBER
PART
MARKING
TEMP.
RANGE (°C)
PACKAGE
PKG.
DWG. #
DG408DJ
DG408DJ
-40 to 85
16 Ld PDIP
E16.3
DG408DJZ (Note)
DG408DJZ
-40 to 85
16 Ld PDIP** (Pb-free)
E16.3
DG408DY*
DG408DY
-40 to 85
16 Ld SOIC
M16.15
DG408DYZ* (Note)
DG408DYZ
-40 to 85
16 Ld SOIC (Pb-free)
M16.15
DG408DVZ* (Note)
DG408DVZ
-40 to 85
16 Ld TSSOP (Pb-free)
M16.173
DG409DJ
DG409DJ
-40 to 85
16 Ld PDIP
E16.3
DG409DJZ (Note)
DG409DJZ
-40 to 85
16 Ld PDIP** (Pb-free)
E16.3
DG409DY*
DG409DY
-40 to 85
16 Ld SOIC
M16.15
DG409DYZ* (Note)
DG409DYZ
-40 to 85
16 Ld SOIC (Pb-free)
M16.15
DG409DVZ* (Note)
DG409DVZ
-40 to 85
16 Ld TSSOP (Pb-free)
M16.173
*Add “-T” suffix for tape and reel.
**Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright Intersil Americas Inc. 1993, 1994, 1997, 1999, 2004, 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
DG408, DG409
Pinouts
DG408 (PDIP, SOIC, TSSOP)
TOP VIEW
DG409 (PDIP, SOIC, TSSOP)
TOP VIEW
A0 1
16 A1
A0 1
16 A1
EN 2
15 A2
EN 2
15 GND
14 V+
V- 3
V- 3
14 GND
S1 4
13 V+
S1A 4
13 S1B
S2 5
12 S5
S2A 5
12 S2B
S3 6
11 S6
S3A 6
11 S3B
S4 7
10 S7
S4A 7
10 S4B
9 S8
DA 8
9 DB
D 8
Functional Block Diagrams
DG408
DG409
S1
D
S1A
DA
S4A
S2
DECODER/
DRIVER
DB
S1B
DECODER/
DRIVER
S4B
S8
5V
REF
† DIGITAL
INPUT
LEVEL
SHIFT
†
†
5V
REF
†
† DIGITAL
INPUT
†
PROTECTION
LEVEL
SHIFT
†
†
†
A0
A1
EN
PROTECTION
A0
A1
A2
EN
TRUTH TABLE DG408
TRUTH TABLE DG409
A2
A1
A0
EN
ON SWITCH
A1
A0
EN
ON SWITCH
X
X
X
0
NONE
X
X
0
NONE
0
0
0
1
1
0
0
1
1
0
0
1
1
2
0
1
1
2
0
1
0
1
3
1
0
1
3
0
1
1
1
4
1
1
1
4
1
0
0
1
5
1
0
1
1
6
1
1
0
1
7
1
1
1
1
8
2
NOTES:
1. VAH Logic “1” ≥2.4V.
2. VAL Logic “0” ≤0.8V.
FN3283.8
June 13, 2006
DG408, DG409
Pin Descriptions - (DG408)
PIN
SYMBOL
1
A0
2
DESCRIPTION
Pin Descriptions - (DG409)
PIN
SYMBOL
Logic Decode Input (Bit 0, LSB)
1
A0
Logic Decode Input (Bit 0, LSB)
EN
Enable Input
2
EN
Enable Input
3
V-
Negative Power Supply Terminal
3
V-
Negative Power Supply Terminal
4
S1
Source (Input) for Channel 1
4
S1A
Source (Input) for Channel 1a
5
S2
Source (Input) for Channel 2
5
S2A
Source (Input) for Channel 2a
6
S3
Source (Input) for Channel 3
6
S3A
Source (Input) for Channel 3a
7
S4
Source (Input) for Channel 4
7
S4A
Source (Input) for Channel 4a
8
D
Drain (Output)
8
DA
Drain a (Output a)
9
S8
Source (Input) for Channel 8
9
DB
Drain b (Output b)
10
S7
Source (Input) for Channel 7
10
S4B
Source (Input) for Channel 4b
11
S6
Source (Input) for Channel 6
11
S3B
Source (Input) for Channel 3b
12
S5
Source (Input) for Channel 5
12
S2B
Source (Input) for Channel 2b
13
V+
Positive Power Supply Terminal (Substrate)
13
S1B
Source (Input) for Channel 1b
14
GND
Ground Terminal (Logic Common)
14
V+
Positive Power Supply Terminal
15
A2
Logic Decode Input (Bit 2, MSB)
15
GND
16
A1
Logic Decode Input (Bit 1)
16
A1
3
DESCRIPTION
Ground Terminal (Logic Common)
Logic Decode Input (Bit 1, MSB)
FN3283.8
June 13, 2006
DG408, DG409
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44.0V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25V
Digital Inputs, VS , VD (Note 3). . . . . .(V-) -2V to (V+) + 2V or 20mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Thermal Resistance (Typical, Note 4)
Operating Conditions
θJA (°C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
TSSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 125°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC and TSSOP - Lead Tips Only)
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. Signals on SX , DX, EN or AX exceeding V+ or V- are clamped by internal diodes. Limit diode current to maximum current ratings.
4. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
Test Conditions: V+ = +15V, V- = -15V, VAL = 0.8V, VAH = 2.4V, Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP (°C)
(NOTE 5)
MIN
(NOTE 6)
TYP
(NOTE 5)
MAX
UNITS
160
250
ns
DYNAMIC CHARACTERISTICS
Transition Time, tTRANS
(See Figure 1)
Full
-
Break-Before-Make Interval, tOPEN
(See Figure 3)
25
10
-
-
ns
Enable Turn-ON Time, tON(EN)
(See Figure 2)
25
-
115
150
ns
Full
-
-
225
ns
Enable Turn-OFF Time, tOFF(EN)
(See Figure 2)
Full
-
105
150
ns
Charge Injection, Q
CL = 10nF, VS = 0V
25
-
20
-
pC
OFF Isolation
VEN = 0V, RL = 1kΩ,
f = 100kHz (Note 9)
25
-
-75
-
dB
Logic Input Capacitance, CIN
f = 1MHz
25
-
8
-
pF
Source OFF Capacitance, CS(OFF)
VEN = 0V, VS = 0V,
f = 1MHz
25
-
3
-
pF
Drain OFF Capacitance, CD(OFF)
VEN = 0V, VD = 0V,
f = 1MHz
25
-
26
-
pF
25
-
14
-
pF
25
-
37
-
pF
25
-
25
-
pF
DG408
DG409
Drain ON Capacitance, CD(ON)
VEN = 3V, VD = 0V,
f = 1MHz, VA = 0V or 3V
DG408
DG409
DIGITAL INPUT CHARACTERISTICS
Logic Input Current,
Input Voltage High, IAH
VA = 2.4V, 15V
Full
-10
-
10
µA
Logic Input Current,
Input Voltage Low, IAL
VEN = 0V, 2.4V,
VA = 0V
Full
-10
-
10
µA
Full
-15
-
15
V
25
-
40
100
Ω
Full
-
-
125
Ω
-
15
Ω
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON Resistance,
rDS(ON)
VD = ±10V, IS = -10mA
(Note 7)
rDS(ON) Matching Between Channels,
∆rDS(ON)
VD = 10V, -10V (Note 8)
25
-
Source OFF Leakage Current, IS(OFF)
VEN = 0V, VS = ±10V,
VD = +10V
25
-0.5
-
0.5
nA
Full
-5
-
5
nA
4
FN3283.8
June 13, 2006
DG408, DG409
Electrical Specifications
Test Conditions: V+ = +15V, V- = -15V, VAL = 0.8V, VAH = 2.4V, Unless Otherwise Specified (Continued)
PARAMETER
TEST CONDITIONS
TEMP (°C)
(NOTE 5)
MIN
(NOTE 6)
TYP
(NOTE 5)
MAX
UNITS
25
-1
-
1
nA
Full
-20
-
20
nA
25
-1
-
1
nA
Full
-10
-
10
nA
VEN = 0V, VD = ±10V,
VS = +10V
Drain OFF Leakage Current, ID(OFF)
DG408
DG409
VS = VD = ±10V (Note 7)
Drain ON Leakage Current, ID(ON)
DG408
DG409
25
-1
-
1
nA
Full
-20
-
20
nA
25
-1
-
1
nA
Full
-10
-
10
nA
Full
-
10
75
µA
Full
-75
1
-
µA
25
-
0.2
0.5
mA
Full
-
-
2
mA
Full
-500
-
-
µA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
VEN = 0V, VA = 0V (Standby)
Negative Supply Current, IVEN = 2.4V, VA = 0V
(Enabled)
Positive Supply Current, I+
Negative Supply Current, I-
Electrical Specifications
Single Supply Test Conditions: V+ = 12V, V- = 0V, VAL = 0.8V, VAH = 2.4V,
Unless Otherwise Specified
TEST
CONDITION
PARAMETER
TEMP (°C)
(NOTE 5)
MIN
(NOTE 6)
TYP
(NOTE 5)
MAX
UNITS
DYNAMIC CHARACTERISTICS
Switching Time of Multiplexer, tTRANS
VS1 = 8V, VS8 = 0V, VIN = 2.4V
25
-
180
-
ns
Enable Turn-ON Time, tON(EN)
VINH = 2.4V, VINL = 0V,
VS1 = 5V
25
-
180
-
ns
25
-
120
-
ns
CL = 10nF, VGEN = 0V,
RGEN = 0Ω
25
-
5
-
pC
Full
0
-
12
V
25
-
90
-
Ω
Enable Turn-OFF Time, tOFF(EN)
Charge Injection, Q
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON-Resistance,
rDS(ON)
VD = 3V, 10V, IS = -1mA
(Note 7)
NOTES:
5. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
6. Typical values are for DESIGN AID ONLY, not guaranteed nor production tested.
7. Sequence each switch ON.
8. ∆rDS(ON) = rDS(ON) (Max) - rDS(ON) (Min).
9. Worst case isolation occurs on channel 4 due to proximity to the drain pin.
5
FN3283.8
June 13, 2006
DG408, DG409
Test Circuits and Waveforms
+15V
+15V
+2.4V
LOGIC
INPUT
A1
A2
V+
S1
S2 - S7
DG408 S
8
GND
V-
±10V
±
EN
A0
SWITCH
OUTPUT
VO
10V
D
50Ω
V+
S1B
EN
300Ω
S1A - S4A, DA
A0 DG409 S4B
LOGIC
INPUT
35pF
A1
GND
V-
±10V
±
+2.4V
10V
DB
50Ω
300Ω
-15V
SWITCH
OUTPUT
VO
35pF
-15V
FIGURE 1A. DG408 TEST CIRCUIT
LOGIC
INPUT
FIGURE 1B. DG409 TEST CIRCUIT
3V
50%
50%
0V
VS1
SWITCH
OUTPUT
VO
tr < 20ns
tf < 20ns
S1
ON
0.8 VS1
0V
0.8 VS8
VS8
tTRANS
tTRANS
S8
ON
FIGURE 1C. MEASUREMENT POINTS
FIGURE 1. TRANSITION TIME
+15V
A0
LOGIC
INPUT
A1
VIN
A2
+15V
V+
S1
DG408
S2 - S8
EN GND
V-
50Ω
V+
S1B
DG409
A1
S1A - S4A
S2B - S4B, DA
EN GND V- DB
-5V
A0
SWITCH
OUTPUT
VO
D
300Ω
LOGIC
INPUT
35pF
VIN
50Ω
-5V
SWITCH
OUTPUT
Vo
300Ω
-15V
35pF
-15V
FIGURE 2A. DG408 TEST CIRCUIT
LOGIC
INPUT
VIN
FIGURE 2B. DG409 TEST CIRCUIT
tr < 20ns
tf < 20ns
3V
50%
50%
0V
tON(EN)
0V
SWITCH
OUTPUT
VO
VO
0.9 VO
tOFF(EN)
FIGURE 2C. MEASUREMENT POINTS
FIGURE 2. ENABLE SWITCHING TIMES
6
FN3283.8
June 13, 2006
DG408, DG409
Test Circuits and Waveforms
(Continued)
+15V
LOGIC
INPUT
+2.4V
V+
EN ALL S AND DA
A0
LOGIC
INPUT
A1
A2
V-
0V
+5V (VS)
VS
DG408
DG409
GND
tr < 20ns
tf < 20ns
3V
SWITCH
OUTPUT
VO
D, DB
50Ω
300Ω
SWITCH
OUTPUT
VO
35pF
80%
80%
0V
tOPEN
-15V
FIGURE 3A. TEST CIRCUIT
FIGURE 3B. MEASUREMENT POINTS
FIGURE 3. BREAK-BEFORE-MAKE INTERVAL
+15V
RGEN
V+
SX
VGEN
LOGIC
INPUT
CL
10nF
EN GND
0V
VO
D
A0
A1
A2
CHANNEL
SELECT
3V
SWITCH
OUTPUT
ON
V∆VO IS THE MEASURED VOLTAGE DUE
TO CHARGE TRANSFER ERROR, Q
Q = CL x ∆VO
-15V
LOGIC INPUT
∆VO
OFF
FIGURE 4A. TEST CIRCUIT
FIGURE 4B. MEASUREMENT POINTS
FIGURE 4. CHARGE INJECTION
5V +15V
0V +15V
VIN
SX
EN
V+
1kΩ
|
|
S8
VO
D
A2
SIGNAL
GENERATOR
VIN
A0
V-
SIGNAL
GENERATOR
GND
V+
|
|
S8
VO
D
1kΩ
A1
A0
VGND
-15V
ANALYZER
EN
A2
1kΩ
A1
S1
SX
-15V
ANALYZER
V
OUT
OFF ISOLATION = 20 Log ----------------V IN
FIGURE 5. OFF ISOLATION
7
V OUT
CROSSTALK = 20 Log ----------------V
IN
FIGURE 6. CROSSTALK
FN3283.8
June 13, 2006
DG408, DG409
Test Circuits and Waveforms
(Continued)
5V +15V
3V OR 0V
+15V
VIN
S1
EN
V+
EN
V+
A2
S1
|
|
S8
VO
CHANNEL
SELECT
D
SIGNAL
GENERATOR
A2
A1
IMPEDANCE
ANALYZER
RL
A1
A0
A0
D
V-
V-
GND
GND
-15V
-15V
ANALYZER
V OUT
INSERTION LOSS = 20 Log ----------------V IN
FIGURE 7. INSERTION LOSS
FIGURE 8. SOURCE/DRAIN CAPACITANCES
Typical Applications
Overvoltage Protection
V+
A very convenient form of overvoltage protection consists of
adding two small signal diodes (1N4148, 1N914 type) in
series with the supply pins (see Figure 9). This arrangement
effectively blocks the flow of reverse currents. It also floats
the supply pin above or below the normal V+ or V- value. In
this case the overvoltage signal actually becomes the power
supply of the IC. From the point of view of the chip, nothing
has changed, as long as the difference V+ - (V-) doesn’t
exceed 44V. The addition of these diodes will reduce the
analog signal range to 1V below V+ and 1V above V-, but it
preserves the low channel resistance and low leakage
characteristics.
Typical application information is for Design Aid Only, not
guaranteed and not subject to production testing.
8
1N4148
SX
D
DG408
VG
1N4148
V-
FIGURE 9. OVERVOLTAGE PROTECTION USING BLOCKING
DIODES
FN3283.8
June 13, 2006
DG408, DG409
Typical Performance Curves
75
3.5
3.0
CD(ON)
V+ = +15V
V- = -15V
50
CS, D (pF)
IIN (pA)
2.0
1.0
CD(OFF)
25
0.5pA
0.0
CS(OFF)
0
-1.0
0
5
10
0
15
4
8
FIGURE 10. INPUT LOGIC CURRENT vs LOGIC INPUT
VOLTAGE
FIGURE 11. SOURCE/DRAIN CAPACITANCE vs ANALOG
VOLTAGE (SINGLE 12V SUPPLY)
80
VSUPPLY = ±15V
VIN = 0V
V+ = +15V
V- = -15V
0
CD(ON)
-200
CD(OFF)
IIN (pA)
CS, D (pF)
60
40
-400
20
CS(OFF)
-600
0
-15
0
VA (V)
-800
15
FIGURE 12. SOURCE/DRAIN CAPACITANCE vs ANALOG
VOLTAGE
-55
5
45
TEMPERATURE (°C)
85
125
FIGURE 13. LOGIC INPUT CURRENT vs TEMPERATURE
60
100
DG408 ID(OFF)
40
60
DG409 ID(OFF)
DG409 ID(ON)
20
V+ = 15V
V- = -15V
VS = -VD FOR ID(OFF)
VD = VS(OPEN) FOR ID(ON)
20
DG408 ID(ON)
ID (pA)
ID (pA)
12
VA (V)
VIN (V)
0
-20
-60
-20
DG409 ID(OFF)
VS = 0V FOR ID(OFF)
VS = VD FOR ID(ON)
-40
-100
DG408 ID(ON), ID(OFF)
-60
0
2
4
6
8
10
12
VD (V)
FIGURE 14. DRAIN LEAKAGE CURRENT vs SOURCE/DRAIN
VOLTAGE (SINGLE 12V SUPPLY)
9
DG409 ID(ON)
-140
-15
0
15
VS , VD (V)
FIGURE 15. DRAIN LEAKAGE CURRENT vs SOURCE/DRAIN
VOLTAGE
FN3283.8
June 13, 2006
DG408, DG409
Typical Performance Curves
(Continued)
20
2.0
15
1.5
V+ = +15V
V- = -15V
VIN (V)
IS(OFF) (pA)
10
5
0
V+ = +12V
V- = 0V
1.0
0.5
-5
0.0
-10
-15
0
4
15
8
12
FIGURE 16. SOURCE LEAKAGE CURRENT vs SOURCE
VOLTAGE
20
FIGURE 17. INPUT SWITCHING THRESHOLD vs SUPPLY
VOLTAGE
104
105
VSUPPLY = ±15V
VSUPPLY = ±15V
103
104
EN = 2.4V
102
I+ (mA)
103
-(I-) (µA)
16
VSUPPLY (±V)
VS (V)
102
10
EN = 0V
10
1
1
EN = 2.4V
0.1
EN = 0V
0.1
0.01
100
1K
10K
100K
1M
10M
100
1k
10k
100k
1M
10M
SWITCHING FREQUENCY (Hz)
SWITCHING FREQUENCY (Hz)
FIGURE 18. NEGATIVE SUPPLY CURRENT vs SWITCHING
FREQUENCY
FIGURE 19. POSITIVE SUPPLY CURRENT vs SWITCHING
FREQUENCY
105
VSUPPLY = ±15V
104
0
I+
-200
102
I- (nA)
I+, I- (nA)
103
10
-400
1
-600
0.1
-(I-)
0.01
-55
5
45
85
TEMPERATURE (°C)
FIGURE 20. ISUPPLY vs TEMPERATURE
10
125
-800
-55
V+ = 15V
V- = -15V
VIN = 0V
VEN = 0V
45
5
TEMPERATURE (°C)
85
125
FIGURE 21. NEGATIVE SUPPLY CURRENT vs TEMPERATURE
FN3283.8
June 13, 2006
DG408, DG409
Typical Performance Curves
(Continued)
90
20
15
CL = 10,000pF
VIN = 5VP-P
80
V+ = 15V
V- = -15V
VIN = 0V
VEN = 0V
70
60
V+ = 15V
V- = -15V
Q (pC)
I+ (µA)
50
10
40
30
20
10
5
V+ = 12V
V- = 0V
0
-10
0
-55
45
5
85
-15
125
-10
-5
0
VS (V)
5
10
15
TEMPERATURE (°C)
FIGURE 22. POSITIVE SUPPLY CURRENT vs TEMPERATURE
(DG408)
FIGURE 23. CHARGE INJECTION vs ANALOG VOLTAGE
160
120
140
V+ = 7.5V
100
±5V
120
rDS(ON) (Ω)
rDS(ON) (Ω)
80
±8V
60
±10V
±12V
40
10V
100
12V
80
15V
20V
60
40
20
22V
V- = 0V
±15V
20
±20V
0
0
-20 -16
-12
-8
-4
0
VD (V)
4
8
12
16
0
20
FIGURE 24. rDS(ON) vs VD AND SUPPLY
4
8
12
VD (V)
20
22
FIGURE 25. rDS(ON) vs VD (SINGLE SUPPLY)
130
80
V+ = 15V
V- = -15V
70
125°C
110
85°C
60
125°C
90
50
rDS(ON) (Ω)
rDS(ON) (Ω)
16
85°C
40
25°C
30
25°C
70
50
20
0°C
-40°C
-55°C
10
0°C
30
V+ = 12V
V- = 0V
-40°C
-55°C
10
0
-15
0
VS (V)
FIGURE 26. rDS(ON) vs VS AND TEMPERATURE
11
15
0
4
8
12
VS (V)
FIGURE 27. rDS(ON) vs VS AND TEMPERATURE
(SINGLE SUPPLY)
FN3283.8
June 13, 2006
DG408, DG409
Typical Performance Curves
(Continued)
275
-150
V+ = +15V
V- = -15V
RL = 1kΩ
-130
250
225
OFF ISOLATION
-90
t (ns)
(dB)
-110
200
tTRANS
175
-70
tOFF(EN)
150
CROSSTALK
-50
tON(EN)
125
-30
100
100
1k
10k
100k
1M
10M
100M
8
9
10
11
12
13
14
15
VSUPPLY (V)
FREQUENCY (Hz)
FIGURE 28. OFF ISOLATION AND CROSSTALK vs FREQUENCY
FIGURE 29. SWITCHING TIME vs SINGLE SUPPLY
190
200
tTRANS
tTRANS
170
150
150
tON(EN)
t (ns)
t (ns)
175
125
130
tOFF(EN)
100
tOFF(EN)
110
tON(EN)
75
10
12
14
16
18
20
90
22
2
3
VSUPPLY (±V)
4
5
VIN (V)
FIGURE 31. SWITCHING TIME vs VIN (SINGLE SUPPLY)
FIGURE 30. SWITCHING TIME vs BIPOLAR SUPPLY
180
1
tTRANS
RL = 1kΩ
0
160
-1
t (ns)
LOSS (dB)
140
120
tOFF(EN)
V+ = +15V
V- = -15V
REF. 1VRMS
-2
-3
-4
100
RL = 50Ω
-5
tON(EN)
80
-6
2
3
4
VIN (V)
FIGURE 32. SWITCHING TIME vs VIN (BIPOLAR SUPPLY)
12
5
10
102
103
104
105
106
FREQUENCY (Hz)
107
108
FIGURE 33. INSERTION LOSS vs FREQUENCY
FN3283.8
June 13, 2006
DG408, DG409
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
1800µm x 3320µm x 485µm
Type: Nitride
Thickness: 8kÅ ±1kÅ
METALLIZATION:
WORST CASE CURRENT DENSITY:
Type: SiAl
Thickness: 12kÅ ±1kÅ
9.1 x 104 A/cm2
Metallization Mask Layout
DG408
EN
(2)
A1
(16)
A0
(1)
A2
(15)
GND
(14)
NC
V- (3)
(13) V+
S1 (4)
(12) S5
S2 (5)
(11) S6
S3 (6)
NC
S4 (7)
(8)
D
13
(9)
S8
(10)
S7
FN3283.8
June 13, 2006
DG408, DG409
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
1800µm x 3320µm x 485µm
Type: Nitride
Thickness: 8kÅ ±1kÅ
METALLIZATION:
WORST CASE CURRENT DENSITY:
Type: SiAl
Thickness: 12kÅ ±1kÅ
9.1 x 104 A/cm2
Metallization Mask Layout
DG409
EN
(2)
A1
(16)
A0
(1)
GND
(15)
NC
NC
V- (3)
(14) V+
S1A (4)
(13) S1B
S2A (5)
(12) S2B
S3A (6)
(11) S3B
S4A (7)
(8)
DA
14
(9)
DB
(10)
S4B
FN3283.8
June 13, 2006
DG408, DG409
Thin Shrink Small Outline Plastic Packages (TSSOP)
M16.173
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
E
0.25(0.010) M
E1
2
INCHES
GAUGE
PLANE
-B1
B M
0.05(0.002)
-A-
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.043
-
1.10
-
A1
3
L
A
D
-C-
e
α
A1
b
0.10(0.004) M
0.25
0.010
SEATING PLANE
c
0.10(0.004)
C A M
0.05
0.15
-
A2
0.033
0.037
0.85
0.95
-
b
0.0075
0.012
0.19
0.30
9
c
0.0035
0.008
0.09
0.20
-
B S
0.002
D
0.193
0.201
4.90
5.10
3
0.169
0.177
4.30
4.50
4
0.026 BSC
E
0.246
L
0.020
N
α
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-153-AB, Issue E.
0.006
E1
e
A2
MILLIMETERS
0.65 BSC
0.256
6.25
0.028
0.50
16
0o
-
0.70
6
16
8o
0o
-
6.50
7
8o
Rev. 1 2/02
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.15mm (0.006
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees)
15
FN3283.8
June 13, 2006
DG408, DG409
Dual-In-Line Plastic Packages (PDIP)
E16.3 (JEDEC MS-001-BB ISSUE D)
N
E1
INDEX
AREA
1 2 3
16 LEAD DUAL-IN-LINE PLASTIC PACKAGE
N/2
INCHES
-B-
SYMBOL
-AE
D
BASE
PLANE
-C-
A2
SEATING
PLANE
A
L
D1
e
B1
D1
eA
A1
eC
B
0.010 (0.25) M
C
L
C A B S
C
eB
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
MILLIMETERS
MIN
MAX
MIN
MAX
A
-
A1
0.015
NOTES
0.210
-
5.33
4
-
0.39
-
4
A2
0.115
0.195
2.93
4.95
-
B
0.014
0.022
0.356
0.558
-
B1
0.045
0.070
1.15
1.77
8, 10
C
0.008
0.014
0.204
0.355
-
D
0.735
0.775
18.66
19.68
5
D1
0.005
-
0.13
-
5
E
0.300
0.325
7.62
8.25
6
E1
0.240
0.280
6.10
7.11
5
e
0.100 BSC
2.54 BSC
-
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
eA
0.300 BSC
7.62 BSC
6
eB
-
0.430
-
10.92
7
4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3.
L
0.115
0.150
2.93
3.81
4
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E and eA are measured with the leads constrained to be perpendicular to datum -C- .
N
16
16
9
Rev. 0 12/93
7. eB and eC are measured at the lead tips with the leads unconstrained.
eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
16
FN3283.8
June 13, 2006
DG408, DG409
Small Outline Plastic Packages (SOIC)
M16.15 (JEDEC MS-012-AC ISSUE C)
N
INDEX
AREA
H
0.25(0.010) M
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
B M
INCHES
E
-B1
2
3
L
SEATING PLANE
-A-
A
D
h x 45°
-C-
e
A1
B
C
0.10(0.004)
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3859
0.3937
9.80
10.00
3
E
0.1497
0.1574
3.80
4.00
4
e
α
B S
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
α
NOTES:
MILLIMETERS
16
0°
16
8°
0°
7
8°
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
Rev. 1 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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17
FN3283.8
June 13, 2006
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