Fairchild FDS6670AS 30v n-channel powertrench syncfet Datasheet

FDS6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDS6670AS
RDS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
•
13.5 A, 30 V.
RDS(ON) max= 9.0 mΩ @ VGS = 10 V
RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (27nC typical)
•
High performance trench technology for extremely low
RDS(ON) and fast switching
Applications
•
• DC/DC converter
High power and current handling capability
• Low side notebook
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
13.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6670AS
FDS6670AS
13’’
12mm
2500 units
FDS6670AS
FDS6670AS_NL (Note 4)
13’’
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6670AS Rev A (X)
FDS6670AS
March 2005
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
3
V
On Characteristics
30
V
31
ID = 1 mA, Referenced to 25°C
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 1 mA
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 13.5 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1
1.7
ID = 1 mA, Referenced to 25°C
–3.3
VGS = 10 V,
ID = 13.5 A
ID = 11.2 A
VGS = 4.5 V,
VGS=10 V, ID =13.5A, TJ=125°C
7.5
9
10
mV/°C
9
11.5
12.5
50
mΩ
A
66
S
1540
pF
440
pF
160
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
td(on)
VGS = 15 mV, f = 1.0 MHz
(Note 2)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
2.1
VDS = 15 V,
VGS = 10 V,
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
ID = 1 A,
RGEN = 6 Ω
10
20
ns
ns
5
10
27
44
ns
18
32
ns
13
23
ns
15
27
ns
24
38
ns
13
23
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
4.2
nC
Qgd
Gate–Drain Charge
5.1
nC
VDD = 15 V,
ID = 13.5 A,
27
38
nC
16
22
nC
FDS6670AS Rev A (X)
FDS6670AS
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VSD
Notes: 1.
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 13.5A,
diF/dt = 300 A/µs
(Note 2)
0.5
0.6
20
(Note 3)
15
(Note 2)
0.7
V
nS
nC
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6670AS_NL is a lead free product. The FDS6670AS_NL marking will appear on the reel label.
FDS6670AS Rev A (X)
FDS6670AS
Electrical Characteristics
FDS6670AS
Typical Characteristics
50
2.6
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
ID, DRAIN CURRENT (A)
4.0V
40
4.5V
6.0V
3.0V
30
20
10
2.5V
2.2
VGS = 3.0V
1.8
3.5V
1.4
4.5V
10V
0.6
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.025
ID = 13.5A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
1
0
1.2
1
0.8
0.6
ID = 6.75A
0.02
0.015
o
TA = 125 C
0.01
o
TA = 25 C
0.005
-50
-25
0
25
50
75
o
TJ, JUNCTION TEMPERATURE ( C)
100
125
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
50
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
4.0V
30
20
TA = 125oC
o
-55 C
10
25oC
0
1
TA = 125oC
o
25 C
0.1
o
-55 C
0.01
0.001
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.1
0.2
0.3
0.4
0.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670AS Rev A (X)
2400
ID =13.5A
f = 1MHz
VGS = 0 V
VDS = 10V
20V
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
4
1800
Ciss
1200
Coss
600
2
Crss
0
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
25
0
30
Figure 7. Gate Charge Characteristics.
30
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
100µs
1ms
10ms
10
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670AS Rev A (X)
FDS6670AS
Typical Characteristics (continued)
FDS6670AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
CURRENT : 0.4A/div
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
0.01
125oC
0.001
100oC
0.0001
25oC
0.00001
0
10
20
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 12. FDS6670AS SyncFET body diode
reverse recovery characteristic.
CURRENT : 0.4A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
FDS6670AS Rev A (X)
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
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