SAVANTIC NS50B Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
NS50B
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type NS50A
APPLICATIONS
·For medium power linear switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
6
A
ICM
Collector current-Pulse
10
A
PC
Collector power dissipation
TC=25
65
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
NS50B
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
ICEO
Collector cut-off current
VCE=60V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=10V
fT
2
60
UNIT
100
3
V
160
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
NS50B
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