LINER LT1127C Dual/quad decompensated low noise, high speed precision op amp Datasheet

LT1126/LT1127
Dual/Quad
Decompensated Low Noise,
High Speed Precision Op Amps
U
DESCRIPTIO
FEATURES
■
100% Tested Low Voltage Noise
■
Slew Rate
Gain-Bandwidth Product
Offset Voltage, Prime Grade
Low Grade
High Voltage Gain
Supply Current Per Amplifier
Common Mode Rejection
Power Supply Rejection
Available in 8-Pin SO Package
■
■
■
■
■
■
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APPLICATI
■
■
■
■
■
■
■
■
■
■
S
Two and Three Op Amp Instrumentation Amplifiers
Low Noise Signal Processing
Active Filters
Microvolt Accuracy Threshold Detection
Strain Gauge Amplifiers
Direct Coupled Audio Gain Stages
Tape Head Preamplifiers
Microphone Preamplifiers
Accelerometer Amplifiers
Infrared Detectors
The LT1126 dual and LT1127 quad are high performance,
decompensated op amps that offer higher slew rate and
bandwidth than the LT1124 dual and the LT1125 quad
operational amplifiers. The enhanced AC performance is
available without degrading DC specs of the LT1124/
LT1125. Both LT1126/LT1127 are stable in a gain of 10 or
more.
In the design, processing, and testing of the device,
particular attention has been paid to the optimization of the
entire distribution of several key parameters. Slew rate,
gain-bandwidth, and 1kHz noise are 100% tested for each
individual amplifier. Consequently, the specifications of
even the lowest cost grades (the LT1126C and the LT1127C)
have been enhanced.
Power consumption of the dual LT1126 is less than one
half of two OP-37s. Low power and high performance in an
8-pin SO package makes the LT1126 a first choice for
surface mounted systems and where board space is
restricted.
Protected by U.S. patents 4,775,884 and 4,837,496.
Low Noise, Wide Bandwidth Instrumentation Amplifier
– INPUT
Voltage Noise vs Frequency
+
620 Ω
1/4
LT1127
–
10k
100
6.2k
200 Ω
–
–
1/4
LT1127
+ INPUT
1/4
LT1127
6.2k
620Ω
OUTPUT
+
+
10k
GAIN = 1000, BANDWIDTH = 480kHz
INPUT REFERRED NOISE = 4.5nV/ √ Hz AT 1kHz, 6µVRMS OVER BANDWIDTH
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
■
2.7nV/√Hz Typ
4.2nV/√Hz Max
11V/µs Typ
65MHz Typ
70µV Max
100µV Max
5 Million Min
3.1mA Max
112dB Min
116dB Min
V S = ±15V
TA = 25°C
30
10
MAXIMUM
3
1/f CORNER
2.3Hz
1
0.1
1.0
10
TYPICAL
100
1000
FREQUENCY (Hz)
LT1126 • TA01
LT1126 • TA07
1
LT1126/LT1127
W W
W
AXI U
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ABSOLUTE
RATI GS
Supply Voltage ..................................................... ±22V
Input Voltage ............................ Equal to Supply Voltage
Output Short Circuit Duration .......................... Indefinite
Differential Input Current (Note 5) ......................± 25mA
Lead Temperature (Soldering, 10 sec.)................. 300°C
Operating Temperature Range
LT1126AM/LT1126M
LT1127AM/LT1127M ........................ –55°C to 125°C
LT1126AC/LT1126C
LT1127AC/LT1127C ............................ –40°C to 85°C
Storage Temperature Range
All Grades ......................................... –65°C to 150°C
W
U
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PACKAGE/ORDER I FOR ATIO
TOP VIEW
+IN A
1
V–
2
+IN B
3
–IN B
A
B
4
8
–IN A
7
OUT A
6
V+
5
ORDER PART
NUMBER
LT1126CS8
OUT B
S8 PART
MARKING
S8 PACKAGE
8-LEAD PLASTIC SOIC
NOTE: THIS PIN CONFIGURATION DIFFERS FROM THE
8-PIN DIP CONFIGURATION. INSTEAD, IT FOLLOWS
THE INDUSTRY STANDARD LT1013DS8 SO PACKAGE
PIN LOCATIONS
ORDER PART
NUMBER
TOP VIEW
OUT A
1
–IN A
2
+IN A
3
V–
4
8
V+
7
OUT B
6
–IN B
5
+IN B
LT1126AMJ8
LT1126MJ8
LT1126CJ8
LT1126ACN8
LT1126CN8
A
B
J8 PACKAGE
8-LEAD CERAMIC DIP
N8 PACKAGE
8-LEAD PLASTIC DIP
LT1126 • POI02
1126
LT1126 • POI01
TOP VIEW
TOP VIEW
OUT A
1
16 OUT D
–IN A
2
15 –IN D
+IN A
3
14 +IN D
V+
4
13 V –
+IN B
5
12 +IN C
–IN B
6
OUT B
7
10 OUT C
NC
8
9
A
B
LT1127CS
D
C
11 –IN C
OUT A
1
–IN A
2
+IN A
3
V+
4
+IN B
5
–IN B
6
OUT B
7
LT1127AMJ
LT1127MJ
LT1127CJ
LT1127ACN
LT1127CN
14 OUT D
13 –IN D
A
D
12 +IN D
11 V –
10 +IN C
B
C
9
–IN C
8
OUT C
NC
J PACKAGE
N PACKAGE
14-LEAD CERAMIC DIP 14-LEAD PLASTIC DIP
S PACKAGE
16-LEAD PLASTIC SOL
LT1126 • POI04
LT1126 • POI03
ELECTRICAL CHARACTERISTICS
VS = ±15V, TA = 25°C, unless otherwise noted.
LT1126AM/AC
LT1127AM/AC
MIN
TYP
MAX
SYMBOL
PARAMETER
CONDITIONS (Note 1)
VOS
Input Offset Voltage
LT1126
LT1127
∆VOS
∆Time
IOS
Long Term Input Offset
Voltage Stability
Input Offset Current
20
25
0.3
LT1126
LT1127
IB
en
Input Bias Current
Input Noise Voltage
5
6
±7
70
2
0.1Hz to 10Hz (Notes 7 and 8)
70
90
15
20
± 20
200
LT1126M/C
LT1127M/C
MIN
TYP
MAX
UNITS
25
30
0.3
µV
µV
µV/Mo
6
7
±8
70
100
140
20
30
± 30
nA
nA
nA
nVp-p
LT1126/LT1127
ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS (Note 1)
Input Noise Voltage Density
fO = 10Hz (Note 3)
fO = 1000Hz (Note 2)
fO = 10Hz
fO = 1000Hz
in
Input Noise Current Density
VCM
CMRR
PSRR
AVOL
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
VOUT
SR
GBW
ZO
IS
Maximum Output Voltage Swing
Slew Rate
Gain-Bandwidth Product
Open Loop Output Resistance
Supply Current Per Amplifier
Channel Separation
VCM = ±12V
VS = ± 4V to ±18V
RL ≥ 10kΩ, VO = ±10V
RL ≥ 2kΩ, VO = ±10V
RL ≥ 2kΩ
RL ≥ 2kΩ (Notes 2 and 6)
fO = 10kHz (Note 2)
VO = 0, IO = 0
f ≤ 10Hz (Note 8)
VO = ±10V, RL = 2kΩ
LT1126AM/AC
LT1127AM/AC
MIN
TYP
MAX
3.0
2.7
1.3
0.3
± 12.0 ± 12.8
112
126
116
126
5.0
17.0
2.0
4.0
± 13.0 ± 13.8
8.0
11
45
65
75
2.6
134
150
5.5
4.2
3.1
LT1126M/C
LT1127M/C
MIN
TYP
MAX
3.0
2.7
1.3
0.3
± 12.0 ± 12.8
106
124
110
124
3.0
15.0
1.5
3.0
± 12.5 ± 13.8
8.0
11
45
65
75
2.6
130
150
5.5
4.2
3.1
UNITS
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
V
dB
dB
V/µV
V/µV
V
V/µs
MHz
Ω
mA
dB
ELECTRICAL CHARACTERISTICS VS = ±15V, − 55°C ≤ TA ≤ 125°C, unless otherwise noted.
SYMBOL
VOS
PARAMETER
Input Offset Voltage
∆VOS
∆Temp
IOS
Average Input Offset Voltage Drift
IB
VCM
CMRR
PSRR
AVOL
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
VOUT
SR
IS
Maximum Output Voltage Swing
Slew Rate
Supply Current Per Amplifier
Input Offset Current
CONDITIONS (Note 1)
LT1126
LT1127
(Note 4)
●
●
LT1126
LT1127
●
●
●
LT1126AM
LT1127AM
MIN TYP MAX
50
170
55
190
0.3
1.0
●
●
VCM = ±11.3V
VS = ± 4V to ±18V
RL ≥ 10kΩ, VO = ±10V
RL ≥ 2kΩ, VO = ±10V
RL ≥ 2kΩ
RL ≥ 2kΩ (Notes 2 and 6)
The • denotes the specifications which apply over the full operating
temperature range.
Note 1: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers; i.e., out of 100 LT1127s (or 100
LT1126s) typically 240 op amps (or 120) will be better than the indicated
specification.
Note 2: This parameter is 100% tested for each individual amplifier.
Note 3: This parameter is sample tested only.
Note 4: This parameter is not 100% tested.
Note 5: The inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise. If differential input
voltage exceeds ±1.4V, the input current should be limited to 25mA.
●
●
●
●
●
●
●
± 11.3
106
110
3.0
1.0
± 12.5
7.2
18
45
18
55
± 18 ± 55
± 12
122
122
10.0
3.0
± 13.6
10
2.8
3.5
LT1126M
LT1127M
MIN
TYP
60
70
0.4
MAX
250
290
1.5
20
60
20
70
± 20 ± 70
± 11.3 ± 12
100
120
104
120
2.0
10.0
0.7
2.0
± 12.0 ± 13.6
7.0
10
2.8
3.5
UNITS
µV
µV
µV/°C
nA
nA
nA
V
dB
dB
V/µV
V/µV
V
V/µs
mA
Note 6: Slew rate is measured in AV = –10; input signal is ±1V, output
measured at ±5V.
Note 7: 0.1Hz to 10Hz noise can be inferred from the 10Hz noise voltage
density test. See the test circuit and frequency response curve for 0.1Hz to
10Hz tester in the Applications Information section of the LT1007 or
LT1028 datasheets.
Note 8: This parameter is guaranteed but not tested.
Note 9: The LT1126 and LT1127 are not tested and are not quality
assurance sampled at –40°C and at 85°C. These specifications are
guaranteed by design, correlation and/or inference from – 55°C, 0°C, 25°C,
70°C and/or 125°C tests.
3
LT1126/LT1127
ELECTRICAL CHARACTERISTICS VS = ±15V, 0°C ≤ TA ≤ 70°C, unless otherwise noted.
SYMBOL
VOS
PARAMETER
Input Offset Voltage
∆VOS/∆T
IOS
Average Input Offset Voltage Drift
Input Offset Current
IB
VCM
CMRR
PSRR
AVOL
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
VOUT
SR
IS
Maximum Output Voltage Swing
Slew Rate
Supply Current Per Amplifier
CONDITIONS (Note 1)
LT1126
LT1127
(Note 4)
LT1126
LT1127
VCM = ±11.5V
VS = ±4V to ±18V
RL ≥ 10kΩ, VO = ±10V
RL ≥ 2kΩ, VO = ±10V
RL ≥ 2kΩ
RL ≥ 2kΩ (Notes 2 and 6)
ELECTRICAL CHARACTERISTICS
MIN
●
●
●
●
●
●
●
●
●
●
●
●
●
●
± 11.5
109
112
4.0
1.5
± 12.5
7.5
LT1126AC
LT1127AC
TYP MAX
35
120
40
140
0.3
1.0
6
25
7
35
±8
± 35
± 12.4
125
125
15.0
3.5
± 13.7
10.5
2.7
3.3
LT1126C
LT1127C
MIN
TYP MAX
45
170
50
210
0.4
1.5
7
35
8
45
±9
± 45
± 11.5 ± 12.4
102
122
107
122
2.5
14.0
1.0
2.5
± 12.0 ± 13.7
7.3
10.5
2.7
3.3
UNITS
µV
µV
µV/°C
nA
nA
nA
V
dB
dB
V/µV
V/µV
V
V/µs
mA
VS = ±15V, −40°C ≤ TA ≤ 85°C, unless otherwise noted. (Note 9)
SYMBOL
PARAMETER
CONDITIONS (Note 1)
VOS
Input Offset Voltage
LT1126
LT1127
∆VOS /∆T
IOS
Average Input Offset Voltage Drift
Input Offset Current
IB
VCM
CMRR
PSRR
AVOL
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
VOUT
SR
IS
Maximum Output Voltage Swing
Slew Rate
Supply Current Per Amplifier
LT1126
LT1127
VCM = ±11.4V
VS = ± 4V to ±18V
RL ≥ 10kΩ, VO = ±10V
RL ≥ 2kΩ, VO = ±10V
RL ≥ 2kΩ
RL ≥ 2kΩ (Note 6)
LT1126AC
LT1127AC
MIN TYP MAX
●
●
●
●
●
●
●
●
●
●
●
●
●
●
± 11.4
107
111
3.5
1.2
± 12.5
7.3
40
140
45
160
0.3
1.0
15
40
15
50
± 15 ± 50
± 12.2
124
124
12.0
3.2
± 13.6
10.2
2.8
3.4
LT1126C
LT1127C
MIN
TYP MAX
50
200
55
240
0.4
1.5
17
55
17
65
± 17 ± 65
± 11.4 ± 12.2
101
121
106
121
2.2
12.0
0.8
2.3
± 12.0 ± 13.6
7.1
10.2
2.8
3.4
UNITS
µV
µV
µV/°C
nA
nA
nA
V
dB
dB
V/µV
V/µV
V
V/µs
mA
U W
TYPICAL PERFOR A CE CHARACTERISTICS
The typical behavior of many LT1126/LT1127 parameters
is identical to the LT1124/LT1125. Please refer to the
LT1124/LT1125 data sheet for the following performance
characteristics:
0.1Hz to 10Hz Voltage Noise
0.01Hz to 1Hz Voltage Noise
Current Noise vs Frequency
Input Bias or Offset Current vs Temperature
Output Short Circuit Current vs Time
4
Input Bias Current Over the Common Mode Range
Voltage Gain vs Temperature
Input Offset Voltage Drift Distribution
Offset Voltage Drift with Temperature of Representative
Units
Output Voltage Swing vs Load Current
Common Mode Limit vs Temperature
Channel Separation vs Frequency
Warm-Up Drift
Power Supply Rejection Ratio vs Frequency
LT1126/LT1127
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Gain, Phase Shift vs Frequency
Small-Signal Transient Response
50
VS = ±15V
TA = 25°C
C L = 10pF
Ø
40
80
30
100
20
120
GAIN
10
140
0
1.0
0.1
– 10V
– 50mV
AVCL = –10V
VS = ±15V OR ±5V
CL = 15pF
180
100
10
0V
0mV
160
–10
10V
50mV
PHASE SHIFT (DEGREES)
VOLTAGE GAIN (dB)
Large-Signal Transient Response
60
AVCL = –10V
VS = ±15V
LT1126 • TPC02
LT1126 • TPC03
FREQUENCY (MHz)
LT1126 • TPC01
Common Mode Rejection Ratio vs
Frequency
Voltage Gain vs Frequency
100
80
60
40
20
0
–20
0.01
1
100
10k
1M
120
100
80
60
40
20
0
100M
10k
100k
1M
1
0
10M
AV = –100
0.001
AV = –10
10k 20k
TOTAL HARMONIC DISTORTION + NOISE (%)
ZL = 2k/15pF
VO = 20Vp-p
AV = –10, –100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
LT1126 • TPC07
±10
±15
LT1126 • TPC06A
0.1
0.010
ZL = 2k/15pF
VO = 20Vp-p
AV = +10, +100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
AV = +100
0.001
0.0001
20
AV = +10
100
1k
± 20
Intermodulation Distortion
(CCIF Method)* vs Frequency
10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
±5
SUPPLY VOLTAGE (V)
Total Harmonic Distortion
and Noise vs Frequency for
Non-Inverting Gain
0.1
1k
–55°C
2
LT1126 • TPC05
Total Harmonic Distortion
and Noise vs Frequency for
Inverting Gain
100
25°C
FREQUENCY (Hz)
LT1126 • TPC04
0.0001
20
125°C
0
1k
FREQUENCY (Hz)
0.010
SUPPLY CURRENT PER AMPLIFIER (mA)
120
TA = 25°C
VS = ±15V
VCM = ±10V
140
INTERMODULATION DISTORTION (IMD) (%)
VOLTAGE GAIN (dB)
140
COMMON MODE REJECTION RATIO (dB)
VS = ±15V
TA = 25°C
160
TOTAL HARMONIC DISTORTION + NOISE (%)
Supply Current vs Supply Voltage
3
160
180
0.1
0.010
ZL = 2k/15pF
f (IM) = 1kHz
fO = 13.5kHz
VO = 20Vp-p
AV = –10
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
0.001
0.0001
3k
LT1126
10k
20k
FREQUENCY (Hz)
LT1126 • TPC08
LT1126 • TPC09
*See LT1115 data sheet for definition of CCIF testing
5
LT1126/LT1127
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APPLICATI
S I FOR ATIO
Matching Specifications
High Speed Operation
In many applications the performance of a system depends on the matching between two op amps, rather than
the individual characteristics of the two devices. The three
op amp instrumentation amplifier configuration shown in
this data sheet is an example. Matching characteristics are
not 100% tested on the LT1126/LT1127.
When the feedback around the op amp is resistive (RF), a
pole will be created with RF, the source resistance and
capacitance (RS, CS), and the amplifier input capacitance
(CIN ≈ 2pF). In low closed loop gain configurations and
with RS and RF in the kilohm range, this pole can create
excess phase shift and even oscillation. A small capacitor
(CF) in parallel with RF eliminates this problem. With
RS (CS + CIN) = RF CF, the effect of the feedback pole is
completely removed.
C
Some specifications are guaranteed by definition. For
example, 70µV maximum offset voltage implies that mismatch cannot be more than 140µV. 112dB (= 2.5µV/V)
CMRR means that worst case CMRR match is 106dB
(5µV/V). However, the following table can be used to
estimate the expected matching performance between the
two sides of the LT1126, and between amplifiers A and D,
and between amplifiers B and C of the LT1127.
F
RF
–
RS
CIN
CS
OUTPUT
+
LT1126 • TA02
Expected Match
LT1126AM/AC
LT1127AM/AC
50% YIELD
98% YIELD
PARAMETER
VOS Match, ∆VOS
LT1126
LT1127
Temperature Coefficient Match
Average Non-Inverting IB
Match of Non-Inverting IB
CMRR Match
PSRR Match
20
30
0.35
6
7
126
127
LT1126M/C
LT1127M/C
50% YIELD
98% YIELD
UNITS
30
50
0.5
7
8
123
127
130
180
1.5
25
30
112
114
µV
µV
µV/°C
nA
nA
dB
dB
110
150
1.0
18
22
115
118
UO
TYPICAL APPLICATI
S
Gain 1000 Amplifier with 0.01% Accuracy, DC to 5Hz
340k
1%
TYPICAL
PRECISION
OP AMP
+15V
–
LT1126
+
INPUT
1.0
20k
TRIM
GAIN ERROR (%)
365Ω
1%
15k
5%
Gain Error vs Frequency
Closed Loop Gain = 1000
OUTPUT
RN60C FILM RESISTORS
–15V
THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT1126/LT1127 IS USEFUL IN LOW FREQUENCY HIGH CLOSED
LOOP GAIN AMPLIFIER APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN LOOP GAIN OF ONE
MILLION WITH 500kHz BANDWIDTH. AS THE GAIN ERROR PLOT SHOWS, THIS DEVICE IS CAPABLE OF 0.1%
AMPLIFYING ACCURACY UP TO 0.3Hz ONLY. EVEN INSTRUMENTATION RANGE SIGNALS CAN VARY AT A FASTER
RATE. THE LT1126/LT1127 “GAIN PRECISION — BANDWIDTH PRODUCT” IS 330 TIMES HIGHER, AS SHOWN.
0.1
0.01
LT1126/LT1127
GAIN ERROR =
0.001
0.1
1
CLOSED LOOP GAIN
OPEN LOOP GAIN
10
100
LT1126 • TA03
FREQUENCY (Hz)
LT1126 • TA04
6
LT1126/LT1127
UO
TYPICAL APPLICATI
S
Low Noise, Wideband, Gain = 100 Amplifier with High Input Impedance
1.1k
120
–
2.4k
1/4
LT1127
500Ω
7.5k
+
1.1k
2.4k
–
1/4
LT1127
120
OUTPUT
+
–
1/4
LT1127
+
INPUT
1.1k
120
2.4k
–3dB BANDWIDTH = 910 kHz
GAIN BANDWIDTH PRODUCT = 91.0MHz
–
1/4
LT1127
WIDEBAND NOISE = 3.2nV/√Hz = 1.85nV/√Hz REFERRED TO INPUT
√3
+
RMS NOISE DC TO FULL BANDWIDTH = 21.2µV REFERRED TO INPUT
LT1126 • TA05
W
W
SCHE ATIC DIAGRA
(1/2 LT1126, 1/4 LT1127)
V+
360µA
Q7
570µA
100µA
Q28
21k
200pF
21k
3.6k
3.6k
5pF
Q27
Q18
Q9
Q3
Q10
Q17
Q8
OUTPUT
Q26
Q19
NON-INVERTING
INPUT (+)
20
Q25
Q20
20
V–
Q1A
Q2A
Q1B
400
Q30
Q2B
67pF
INVERTING
INPUT (–)
20pF
V+
Q13
Q29
V+
Q22
Q11
Q12 Q15
Q16
Q23
Q24
200µA
200µA
100µA
200
6k
200
6k
50
V–
LT1126 • TA06
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
7
LT1126/LT1127
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PACKAGE DESCRIPTIO
160°C
0.015 – 0.060
(0.381 – 1.524)
θJA
0.008 – 0.018
(0.203 – 0.460)
100°C/W
0.405
(10.287)
MAX
0.005
(0.127)
MIN
0.200
(5.080)
MAX
0.290 – 0.320
(7.366 – 8.128)
J8 Package
8-Lead Ceramic DIP
TJ MAX
Dimensions in inches (millimeters) unless otherwise noted.
8
0.025
(0.635)
RAD TYP
0.220 – 0.310
(5.588 – 7.874)
1
0.038 – 0.068
(0.965 – 1.727)
θJA
140°C
130°C/W
0.300 – 0.320
(7.620 – 8.128)
0.065
(1.651)
TYP
+0.025
0.325 –0.015
(8.255 +0.635
–0.381)
θJA
140°C
190°C/W
0.100 ± 0.010
(2.540 ± 0.254)
7
6
5
0.250 ± 0.010
(6.350 ± 0.254)
0.020
(0.508)
MIN
1
0.018 ± 0.003
(0.457 ± 0.076)
2
3
4
N8 1291
0.189 – 0.197
(4.801 – 5.004)
S8 Package
8-Lead Plastic SOIC
TJ MAX
0.125
(3.175)
MIN
0.045 ± 0.015
(1.143 ± 0.381)
8
0.010 – 0.020
× 45°
(0.254 – 0.508)
TJ MAX
θJA
160°C
80°C/W
0.228 – 0.244
(5.791 – 6.198)
0.016 – 0.050
0.406 – 1.270
0.150 – 0.157
(3.810 – 3.988)
0.050
(1.270)
BSC
0.014 – 0.019
(0.356 – 0.483)
0.200
(5.080)
MAX
0.290 – 0.320
(7.366 – 8.128)
0.008 – 0.018
(0.203 – 0.460)
0° – 15°
0.038 – 0.068
(0.965 – 1.727)
0.100 ± 0.010
(2.540 ± 0.254)
0.014 – 0.026
(0.360 – 0.660)
N Package
14-Lead Plastic DIP
TJ MAX
θJA
140°C
110°C/W
TJ MAX
θJA
140°C
130°C/W
8
13
14
11
12
10
9
8
0.220 – 0.310
(5.588 – 7.874)
2
3
5
4
6
7
0.098
(2.489)
MAX
J14 1291
0.065
(1.651)
TYP
0.770
(19.558)
MAX
14
13
12
11
10
9
8
1
2
3
4
5
6
7
0.260 ± 0.010
(6.604 ± 0.254)
+0.025
0.325 –0.015
0.075 ± 0.015
(1.905 ± 0.381)
(8.255 +0.635
–0.381)
SOL Package
16-Lead Plastic SOL
S8 1291
0.785
(19.939)
MAX
1
0.125
(3.175)
MIN
0.009 - 0.015
(0.229 - 0.381)
0.005
(0.127)
RAD MIN
4
0.025
(0.635)
RAD TYP
0.045 – 0.065
(1.143 – 1.651)
0.015
(0.380)
MIN 0.130 ± 0.005
(3.302 ± 0.127)
3
2
0.005
(0.127)
MIN
0.015 – 0.060
(0.381 – 1.524)
0.385 ± 0.025
(9.779 ± 0.635)
0.300 – 0.325
(7.620 – 8.255)
5
6
0.004 – 0.010
(0.102 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0°– 8° TYP
7
0.053 – 0.069
(1.346 – 1.753)
1
J Package
14-Lead Ceramic DIP
4
0.400
(10.160)
MAX
8
0.009 - 0.015
(0.229 - 0.381)
3
J8 1291
0.130 ± 0.005
(3.302 ± 0.127)
0.045 – 0.065
(1.143 – 1.651)
2
0.055
(1.397)
MAX
0.125
3.175
0.100 ± 0.010 MIN
(2.540 ± 0.254)
0.014 – 0.026
(0.360 – 0.660)
TJ MAX
5
0° – 15°
0.385 ± 0.025
(9.779 ± 0.635)
N8 Package
8-Lead Plastic DIP
6
7
0.018 ± 0.003
(0.457 ± 0.076)
0.100 ± 0.010
(2.540 ± 0.254)
0.291 – 0.299
(7.391 – 7.595)
(NOTE 2)
0.010 – 0.029 × 45°
(0.254 – 0.737)
0.093 – 0.104
(2.362 – 2.642)
0.125
(3.175)
MIN
N14 1291
0.398 – 0.413
(10.109 – 10.490)
(NOTE 2)
0.037 – 0.045
(0.940 – 1.143)
16
15
14
13
12
11
10
9
0° – 8° TYP
0.009 – 0.013
(0.229 – 0.330)
NOTE 1
0.050
(1.270)
TYP
0.016 – 0.050
(0.406 – 1.270)
NOTE:
1. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS.
THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS.
2. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm).
Linear Technology Corporation
0.004 – 0.012
(0.102 – 0.305)
0.394 – 0.419
(10.007 – 10.643)
NOTE 1
0.014 – 0.019
(0.356 – 0.482)
TYP
1
2
3
4
5
6
7
8
BA/GP 0192 10K REV 0
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977
 LINEAR TECHNOLOGY CORPORATION 1992
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