IXYS DPG30C400PB High performance fast recovery diode low loss and soft recovery common cathode Datasheet

DPG 30 C 400 PB
V RRM =
400 V
I FAV = 2x 15 A
t rr =
45 ns
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DPG 30 C 400 PB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: TO-220
Conditions
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
forward voltage
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
max.
Unit
V
VR = 400 V
1
µA
VR = 400 V
TVJ = 150 °C
0.18
mA
TVJ = 25 °C
1.39
V
1.63
V
1.14
V
1.40
V
IF =
15 A
IF =
30 A
IF =
15 A
IF =
30 A
rectangular
TVJ = 150 °C
d = 0.5
TC = 140°C
15
A
TVJ = 175°C
0.84
V
16.5
mΩ
1.70
K/W
175
°C
TC = 25 °C
90
W
TVJ = 45°C
190
A
-55
t = 10 ms (50 Hz), sine
IF =
reverse recovery time
typ.
400
for power loss calculation only
R thJC
t rr
min.
TVJ = 25 °C
TVJ = 25 °C
15 A; VR = 270 V
-di F /dt = 200 A/µs
VR = 200 V; f = 1 MHz
TVJ = 25 °C
4
A
TVJ = 125°C
5.5
A
TVJ = 25 °C
45
ns
TVJ = 125°C
70
ns
TVJ = 25 °C
16
pF
Data according to IEC 60747and per diode unless otherwise specified
20100127a
DPG 30 C 400 PB
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
RthCH
thermal resistance case to heatsink
Tstg
storage temperature
per pin
max.
Unit
35
0.50
-55
Weight
A
K/W
150
°C
2
MD
mounting torque
FC
mounting force with clip
1)
typ.
1)
g
0.4
0.6
Nm
20
60
N
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Product Marking
Part number
Marking on product
Logo
DateCode
Assembly Code
Ordering
Standard
abcdef
YYWW
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
XXXXXX
Part Name
DPG 30 C 400 PB
Similar Part
DPG30C400HB
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
D
P
G
30
C
400
PB
Marking on Product
DPG30C400PB
Package
TO-247AD (3)
Delivering Mode
Tube
Base Qty Code Key
50
507157
Voltage Class
400
Data according to IEC 60747and per diode unless otherwise specified
20100127a
DPG 30 C 400 PB
Outlines TO-220
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
D
9.91
3.54
10.66
4.08
0.390 0.420
0.139 0.161
E
F
5.85
2.54
6.85
3.18
0.230 0.270
0.100 0.125
G
H
1.15
2.79
1.65
5.84
0.045 0.065
0.110 0.230
J
K
0.64
2.54
1.01
BSC
0.025 0.040
0.100 BSC
M
N
4.32
1.14
4.82
1.39
0.170 0.190
0.045 0.055
Q
R
0.35
2.29
0.56
2.79
0.014 0.022
0.090 0.110
M
C
B
E
D
F
N
A
H
G
J
K
L
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Q
R
Data according to IEC 60747and per diode unless otherwise specified
20100127a
DPG 30 C 400 PB
80
0.4
TVJ = 125°C
70
30 A
12
15 A
10
7.5 A
IRM 8
IF = 30 A
VR = 270 V
60
0.3
IF = 15 A
IF = 7.5 A
IF
50
Qrr
40
[A]
0.2
6
[A]
[µC]
30 TVJ = 25°C
150°C
20
4
0.1
TVJ = 125°C
2
10
VR = 270 V
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
0
VF [V]
Fig. 1 Forward current IF vs. VF
100 200 300 400 500 600
-diF /dt [A/µs]
0
-diF /dt [A/µs]
Fig. 3 Typ. peak reverse current
I RM versus -di F /dt
Fig. 2 Typ. reverse recovery charge
Qrr versus -diF /dt
1.4
100 200 300 400 500 600
120
18
TVJ = 125°C
VR = 270 V
1.2
100
450
TVJ = 125°C
16
400
IF = 15 A
VR = 270 V
14
350
1.0
0.8
trr
Kf
IRM
0.6
[ns]
80
VFR
IF = 30 A
60
12
300
10
250
tfr
200
[ns]
150
V]
8
6
0.4
40
Qrr
0.2
15 A
7.5 A
0.0
40
80
120
TVJ [°C]
160
tfr
2
20
0
VFR
4
50
0
0
100 200 300 400 500 600
0
-diF /dt [A/µs]
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
Fig. 5 Typ. recovery time trr vs. -diF /dt
25
100
0
100 200 300 400 500 600
-diF /dt [A/µs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
2.0
TVJ = 125°C
VR = 270 V
20
1.6
Erec
IF = 30 A
15
IF = 15 A
[µJ]
IF = 7.5 A
ZthJC
1.2
[K/W]
10
0.8
5
0.4
0
0.0
0
100 200 300 400 500 600
-diF /dt [A/µs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per diode unless otherwise specified
20100127a
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