ON MPSA27RLRM Darlington transistor npn silicon Datasheet

MPSA27
Darlington Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCES
60
Vdc
Emitter −Base Voltage
VEBO
10
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Operating and Storage Junction
Temperature Range
BASE
2
EMITTER 1
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92
CASE 29−11
STYLE 1
1
2
MPS
A27
AYWW G
G
3
MPSA27 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPSA27
MPSA27G
MPSA27RLRA
MPSA27RLRAG
MPSA27RLRM
MPSA27RLRMG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Package
Shipping †
TO−92
5000 Units/Box
TO−92
(Pb−Free)
5000 Units/Box
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
TO−92
2000/Ammo Pack
TO−92
(Pb−Free)
2000/Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSA27/D
MPSA27
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
60
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
60
−
−
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
ICES
−
−
500
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc)
IEBO
−
−
100
nAdc
10,000
10,000
−
−
−
−
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 100 mA, IB = 0.1 mAdc)
VCE(sat)
−
−
1.5
Vdc
Base −Emitter On Voltage
(IC = 100 mA, VCE = 5.0 Vdc)
VBE(on)
−
−
2.0
Vdc
hfe
1.25
2.4
−
−
SMALL− SIGNAL CHARACTERISTICS
Small Signal Current Gain
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
MPSA27
VCE = 5.0 V
TA = 25°C
40
TA = −55°C
0
1.0
2.0 3.0
10
20 30
100
200
500
1.0
VCE(S) @ IC/IB = 1.0 k
1k
1.0
2.0 3.0
10
20 30
100
200
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
500
1k
4.0
hfe , SMALL−SIGNAL CURRENT GAIN
TA = 25°C
1.3
1.2
IC = 500 mA
1.1
1.0
0.8
VBE(ON) @ VCE = 5.0 V
IC, COLLECTOR CURRENT (mA)
1.5
0.9
1.2
0.6
1.6
1.4
VBE(S) @ IC/IB = 1.0 k
1.4
0.8
20
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
80
60
TA = 25°C
1.6
TA = 125°C
100
IC = 250 mA
IC = 100 mA
IC = 10 mA
0.7
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
2.0
1.0
0.8
0.6
0.4
0.2
500 1 k
VCE = 5.0 V
f = 100 MHz
TA = 25°C
0.5
1.0
2.0
5.0
10
20
50
100
200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. High Frequency Current Gain
1k
I C , COLLECTOR CURRENT (mA)
h FE , DC CURRENT GAIN (k)
120
1.0 ms
500
100 ms
1.0 s
200
TC = 25°C
TA = 25°C
100
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
1.0
2.0
4.0
6.0
10
20
40 50 60
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region − Safe Operating Area
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3
500
MPSA27
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSA27/D
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