Infineon BTS6123B Smart high-side power switch profet one channel, 10 mâ ¦ Datasheet

D a t a S h e e t , V 1 .0 , D e c e m b e r 2 0 0 5
BTS 6123B
Smart High-Side Power Switch
PROFET
One Channel, 10 m Ω
Automotive Power
N e v e r
s t o p
t h i n k i n g .
Smart High-Side Power Switch
BTS 6123B
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 6123B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4.2.1 Over-Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.2.3 Reverse Polarity Protection - ReversaveTM . . . . . . . . . . . . . . . . . . . . . . 18
4.2.4 Over-Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.6 Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4.3.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5 Package Outlines BTS 6123B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Data Sheet
2
V1.0, 2005-12-15
Smart High-Side Power Switch
PROFET
BTS 6123B
Product Summary
P-TO-220-7-180
The BTS 6123B is a one channel high-side power
switch in P-TO-220-7-180 package providing
embedded protective functions including
ReverSave™.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The design is
based on Smart SIPMOS chip on chip technology.
Operating voltage
Vbb(on)
5.5 .. 24 V
Over-voltage protection
VON(CL)
RDS(ON)
39 V
9A
Current limitation
IL(nom)
IL(ISO)
IL6(SC)
Stand-by current for whole device with load
Ibb(OFF)
6 µA
On-State resistance
Nominal load current
Load current (ISO)
10 mΩ
33 A
55 A
Basic Features
•
•
•
•
Very low standby current
Current controlled input pin
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Type
Ordering Code
Package
BTS 6123B
SP000092062
P-TO-220-7-180
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Protective Functions
•
•
•
•
•
•
•
•
•
•
ReverSave™, channel switches on in case of reverse polarity
Reverse battery protection without external components
Short circuit protection with latch
Over-load protection
Multi-step current limitation
Thermal shutdown with restart
Over-voltage protection (including load dump)
Loss of ground protection
Loss of Vbb protection (with external diode for charged inductive loads)
Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportional load current sense (with defined fault signal in case of overload
operation, over temperature shutdown and/or short circuit shutdown)
• Open load detection in ON-state by load current sense
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
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Smart High-Side Power Switch
BTS 6123B
Overview
1
Overview
The BTS 6123B is a one channel high-side power switch (10 mΩ) in P-TO-220-7-180
power package providing embedded protective functions including ReverSaveTM.
ReverSaveTM is a protection feature that causes the power transistors to switch on in
case of reverse polarity. As a result, the power dissipation is reduced.
The BTS 6123B has a current controlled input and offers a diagnostic feedback with load
current sense. The design is based on Smart SIPMOS chip on chip technology.
1.1
Block Diagram
logic IC
Rbb
base chip
Vbb
voltage sensor
IIN
VIS
VIN
IS
ESD
IN
driver
logic
I IS
gate control
&
charge pump
T
clamp for
inductive load
current
limitation
load current
sense
forward voltage drop detection
RIS
OUT
IL
LOAD
over
temperature
Overview .emf
Figure 1
Data Sheet
Block Diagram
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Smart High-Side Power Switch
BTS 6123B
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb VbIN
V bIS
Ibb
IIN
IN
VIN
VON
VBB
BTS 6123B
RIN
IIS
V IS
IS
OUT
IL
VOUT
RIS
Terms.emf
Figure 2
Data Sheet
Terms
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Smart High-Side Power Switch
BTS 6123B
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment BTS 6123B
TAB
OUT
OUT
IN
Vbb
IS
OUT
OUT
1
2
3
4
5
6
7
Vbb
TO220-7 .emf
Figure 3
Pin Configuration P-TO-220-7-180
2.2
Pin Definitions and Functions
Pin
Symbol
I/O
Function
1
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be
externally shorted.1)
2
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be
externally shorted.1)
3
IN
I
Input; activates the power switch if shorted to
ground.
4, Tab
Vbb
-
Supply Voltage; positive power supply voltage; tab
and pin 4 are internally shorted.
5
IS
O
Sense Output; Diagnostic feedback; provides at
normal operation a sense current proportional to the
load current; in case of overload, over temperature
and/or short circuit a defined current is provided (see
Table 1 "Truth Table" on Page 23).
6
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be
externally shorted.1)
7
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be
externally shorted.1)
1)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability,
the clamping capability and decrease the current sense accuracy.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Electrical Characteristics
3
Electrical Characteristics
3.1
Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Supply Voltage
-16
38
V
-
Vbb(SC)
Supply voltage for full short
circuit protection (single pulse)
(Tj = -40°C .. 150°C) 1)
0
24
V
−
Supply Voltage for Load Dump Vbb(LD)
protection 2)
-
45
V
RI = 2 Ω
RL = 1.5 Ω
-16
63
V
-
-140
15
mA
-
-16
56
V
-
-140
15
mA
-
-20
20
V/µs -
3.1.1
Supply voltage
3.1.2
3.1.3
Vbb
Logic Pins
3.1.4
Voltage at input pin
3.1.5
Current through input pin
3.1.6
Voltage at current sense pin
3.1.7
Current through sense pin
3.1.8
Input voltage slew rate 3)
Vb,IN
IIN
Vb,IS
IIS
dVbIN/dt
Power Stages
3.1.9
Load current 4)
3.1.10 Maximum energy dissipation
(single pulse)
3.1.11 Total power dissipation (DC)
for whole device
IL
EAS
-
ILx(SC) A
-
0.3
J
Ptot
-
65
W
Tj
Tstg
-40
150
°C
-
-55
150
°C
-
-
IL(0) = 20 A
Tj(0) = 150°C
TC = 85 °C
Tj ≤ 150 °C
Temperatures
3.1.12 Junction temperature
3.1.13 Storage temperature
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Electrical Characteristics
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
ESD Susceptibility
3.1.14 ESD susceptibility HBM
VESD
-3
3
kV
according to
EIA/JESD
22-A 114B
1)
Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
2)
Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator
3)
Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series
in the input path. A series resistor RIN in the input path is also required for reverse operation at Vbb≤-16V. See
also Figure 14.
4)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Power Stages
4
Block Description and Electrical Characteristics
4.1
Power Stages
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Input Circuit
Figure 4 shows the input circuit of the BTS 6123B. The current source to Vbb ensures
that the device switches off in case of open input pin. The zener diode protects the input
circuit against ESD pulses.
VbIN
Rbb
IIN
IN
Vbb
VZ,IN
I
VIN
Input.emf
Figure 4
Input Circuit
A high signal at the required external small signal transistor pulls the input pin to ground.
A logic supply current IIN is flowing and the power DMOS switches on with a dedicated
slope, which is optimized in terms of EMC emission.
IIN
VOUT
tON
tOFF
t
90%
50%
dV/dtON
dV/dtOFF
25%
10%
t
Figure 5
Data Sheet
SwitchOn.emf
Switching a Load (resistive)
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Smart High-Side Power Switch
BTS 6123B
Power Stages
4.1.2
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction
temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance.
The on-state resistance in reverse polarity mode is described in Section 4.2.3.
5 21
5 21
Vbb = 12 V
W\S
PΩ
Tj = 25°C
PΩ
ƒ&
7M
Figure 6
W\S
9
9 EE
Typical On-State Resistance
At small load currents the resistance is artificially increased to improve current sense
accuracy. Therefore the forward voltage drop VON at small load currents is no more
proportional to the load current IL , but is controlled by an internal “two level controller”
to remain clamped to a defined value VON(NL). Figure 7 shows the dependency for a
typical device.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Power Stages
Vbb = 12 V
Tj = 25°C
W\S
9 21
9
9 21a, /
9 21≥9 21 1/
$
,/
Figure 7
4.1.3
Typical Output Voltage Drop Limitation
Output Inductive Clamp
When switching off inductive loads, the output voltage VOUT drops below ground
potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ).
V bb
VON
VBB
IL
OUT V OUT
L,
RL
OutputClamp .emf
Figure 8
Output Clamp
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8
and Figure 9 for details. The maximum allowed load inductance is limited.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Power Stages
V OUT
ON
OFF
Vbb
t
VON(CL)
V OUT(CL)
IL
t
Figure 9
InductiveLoad.emf
Switching an Inductance
Maximum Load Inductance
While de energizing inductive loads, energy has to be dissipated in the BTS 6123B. This
energy can be calculated via the following equation:
V bb – V ON ( CL )


RL ⋅ IL
L
E = V ON ( CL ) ⋅ ---------------------------------------- + I L ⋅ -----⋅ ln  1 + -------------------------------------RL
RL
V ON(CL) – V bb

In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified
equation can be used:
V ON(CL)
2
1
E = --- LI L ⋅ -------------------------------------2
V ON(CL) – V bb
The energy, which is converted into heat, is limited by the thermal design of the
component. For given starting currents the maximum allowed inductance is therefore
limited. See Figure 10 for the maximum allowed inductance at Vbb=12V.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Power Stages
Vbb = 12 V
Tj(o) ≤ 150°C
/
P+
$ ,/
Figure 10
Data Sheet
Maximum load inductance for single pulse, Tj,Start = 150°C
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Smart High-Side Power Switch
BTS 6123B
Power Stages
4.1.4
Electrical Characteristics
Vbb = 12 V, Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
5.5
-
38
V
General
4.1.1
Operating voltage
Vbb
4.1.2
Undervoltage
shutdown 1)
VbIN(u)
-
2.5
3.5
V
VIN = 0 V
Tj = -40..150 °C
-
4.1.3
Undervoltage restart
of charge pump
Vbb(ucp)
-
4
5.5
V
-
4.1.4
Operating current
-
1.4
2.2
mA
4.1.5
Stand-by current
Tj = -40 °C, Tj = 25 °C
Tj ≤ 120 °C 1)
Tj = 150 °C
IIN
Ibb(OFF)
Tj = -40..150 °C
IIN = 0 A
µA
-
3
4
10
6
8
18
Input characteristics
4.1.6
Input current for on
IIN(on)
-
1.4
2.2
mA
4.1.7
Input current for off
IIN(off)
-
-
30
µA
-
8
14
10
18
10
18
14
24
-
30
60
9
11
33
39
VbIN≥Vbb(ucp)-VIN,
Tj = -40 … 150 °C
Tj = -40 … 150 °C
Output characteristics
4.1.8
4.1.9
RDS(ON)
On-state resistance
Tj=25°C
Tj=150°C
Vbb=5.5V, Tj=25°C
Vbb=5.5V, Tj=150°C
VON(NL)
Output voltage drop
limitation at small load
currents
4.1.10 Nominal load current IL(nom)
(Tab to pin 1, 2, 6 & 7)
mΩ
VIN=0V, IL=10A,
(Tab to pin 1, 2, 6
and 7)
mV
Tj = -40..150 °C
-
A
45
-
A
42
-
V
Ta = 85 °C
VON ≤ 0.5 V,
Tj ≤ 150 °C
Tc = 85 °C
VON ≤ 0.5 V,
Tj ≤ 150 °C
IL = 40 mA
2) 3)
IL(ISO)
ISO load current 3)
(Tab to pin 1, 2, 6 & 7)
4.1.11 Output clamp
Data Sheet
VON(CL)
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Smart High-Side Power Switch
BTS 6123B
Power Stages
Vbb = 12 V, Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
4.1.12 Inverse current output -VON(inv)
voltage drop 1) 4)
(Tab to pin 1, 2, 6 & 7)
Tj = 25 °C
Tj = 150 °C
typ.
Unit
Test Conditions
mV
IL = -10 A,
RIS = 1 kΩ
RL = 2.2 Ω,
Tj = -40 … 150 °C
RL = 2.2 Ω,
Tj = -40 … 150 °C
Vbb > VOUT
max.
-
950
750
-
Timings
4.1.13 Turn-on time to
90% Vbb
tON
-
300
600
µs
4.1.14 Turn-off time to
10% Vbb
tOFF
-
300
600
µs
-
1
-
ms
td(inv)
4.1.15 Turn-on delay after
1)
inverse operation
VIN(inv) = VIN(fwd) = 0 V
RL = 2.2 Ω,
Tj = -40 … 150 °C
RL = 2.2 Ω,
Tj = -40 … 150 °C
4.1.16 Slew rate On
25% to 50% Vbb
dV/ dtON
-
0.2
0.35 V/µs
4.1.17 Slew rate Off
50% to 25% Vbb
-dV/
dtOFF
-
0.2
0.5
V/µs
Rthjc
Rthja
-
0.8
1
K/W
-
K/W
-
Thermal Resistance
4.1.18 Junction to case 1)
4.1.19 Junction to ambient 1)
free air
device on PCB 2)
-
80
45
55
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
3)
Not subject to production test, parameters are calculated from RDS(ON) and Rth
4)
Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In
this case the device switches on with a time delay td(inv) after the transition from inverse to forward mode. A
sense current IIS(fault) can be provided by the pin IS until standard forward operation is reached.
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Protection Functions
4.2
Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1
Over-Load Protection
The load current IL is limited by the device itself in case of over-load or short circuit to
ground. There are multiple steps of current limitation ILx(SC) which are selected
automatically depending on the voltage drop VON across the power DMOS. Please note
that the voltage at the OUT pin is Vbb - VON. Figure 11 shows the dependency for a
typical device.
, / 6&
$
W\S
9 21 6&
Figure 11
9
9 21
Typical Current Limitation
Depending on the severity of the short condition as well as on the battery voltage the
resulting voltage drop across the device varies.
Whenever the resulting voltage drop VON exceeds the short circuit detection threshold
VON(SC), the device will switch off immediately and latch until being reset via the input.
The VON(SC) detection functionality is activated, when VbIN>10V typ. and the blanking
time td(SC1) passed by after switch on.
In the event that either the short circuit detection via VON(SC) is not activated or that the
on chip temperature sensor senses over-temperature before the blanking time td(SC1)
passed by, the device switches off resulting from over-temperature detection. After
cooling down with thermal hysteresis, the devices switches on again. Please refer to
Figure 12 for details.
Data Sheet
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Smart High-Side Power Switch
BTS 6123B
Protection Functions
VON(SC) detection
Over temperature detection
I IN
IIN
t
VON
VONx > VON(SC)
t
ILx(SC)
IL
t
IL
t
ϑj
tm
td(SC1)
thermal hysteresis
t
t
Over_Temp .emf
V_ON_detect.emf
Figure 12
4.2.2
Overload Behavior
Short circuit impedance
The capability to handle single short circuit events depends on the battery voltage as well
as on the primary and secondary short impedance. Figure 13 outlines allowable
combinations for a single short circuit event of maximum, secondary inductance for given
secondary resistance.
/ 6&
5uH
10mΩ
Vbb
IN OUT
PROFET
9 EE 9
LSC
X+
9 EE 9
RSC
IS
LO AD
Vbb
SHORT
CIRCUIT
9 EE 9
short_circuit.emf
PΩ
5 6&
Figure 13
4.2.3
Short circuit
Reverse Polarity Protection - ReversaveTM
The device can not block a current flow in reverse battery condition. In order to minimize
power dissipation, the device offers ReversaveTM functionality. In reverse polarity
condition the channel will be switched on provided a sufficient gate to source voltage is
generated VGS≈VRbb. Please refer to Figure 14 for details.
Data Sheet
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V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Protection Functions
-Vbb
-IIN
IS
D RIS
-IL
-IIS
signal ground
Figure 14
Vbb
LOAD
IN
RIN
Rbb
Logic
IRbb
power ground
Reverse.emf
Reverse battery protection
Additional power is dissipated by the integrated Rbb resistor. Use following formula for
estimation of overall power dissipation Pdiss(rev) in reverse polarity mode.
2
2
P diss(rev) ≈ R ON(rev) ⋅ I L + R bb ⋅ I Rbb
For reverse battery voltages up to Vbb <16V the pin IN or the pin IS should be low ohmic
connected to signal ground. This can be achieved e.g. by using a small signal diode D
in parallel to the input switch or by using a small signal MOSFET driver. For reverse
battery voltages higher then Vbb >16V an additional resistor RIN is recommended. For
reverse battery voltages higher then Vbb >16 the overall current through Rbb should be
about 80mA.
1
0,08A
1
--------- + ---------- = ----------------------------V bb – 12V
R IN R bb
Note: No protection mechanism is active during reverse polarity. The IC logic is not
functional.
Data Sheet
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V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Protection Functions
4.2.4
Over-Voltage Protection
Beside the output clamp for the power stage as described in Section 4.1.3 there is a
clamp mechanism implemented for all logic pins. See Figure 15 for details.
Logic
IN
IS
Figure 15
4.2.5
Vbb
VZ,IS
VZ,IN
Rbb
OUT
OverVoltage .emf
Over-Voltage Protection
Loss of Ground Protection
In case of complete loss of the device ground connections the BTS 6123B securely
changes to or remains in off state.
4.2.6
Loss of Vbb Protection
In case of complete loss of Vbb the BTS 6123B remains in off state.
In case of loss of Vbb connection with charged inductive loads a current path with load
current capability has to be provided, to demagnetize the charged inductances. It is
recommended to use a diode, a Z-diode, or a varistor (VZL+VD < 39 V or VZb+VD < 16 V
if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to
120 mA. Please refer to Figure 16 for details.
Vbb
IS
R bb
VD
Logic
IN
Vbb
Vbb
VZb
IN IS
Vbb
Logic
Rbb
VD
R IN
RIS
inductive
LOAD
RIN
VZL
Vbb_disconnect_A.emf
Figure 16
Data Sheet
R IS
inductive
LOAD
Vbb_disconnect_B.emf
Loss of Vbb
20
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Protection Functions
4.2.7
Electrical Characteristics
Vbb = 12 V, Tj = +25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
A
VON = 6 V,
max.
Over-Load Protection
4.2.1
4.2.2
4.2.3
4.2.4
4.2.5
Load current limitation1) 2) IL6(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
Load current limitation 2) IL12(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
Load current limitation1) 2) IL18(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
Load current limitation 2) IL24(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
Load current limitation1) 2) IL30(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
55
130
130
100
50
100
100
85
40
70
70
70
-
45
45
45
-
25
25
25
4.5
4.2.7
Short circuit shutdown td(SC1)
delay after input
current pos. slope3)
200
650
4.2.8
Thermal shut down
temperature
150
165
VON = 18 V,
(Tab to pin 1, 2, 6
and 7)
VON = 24 V,
tm = 170 µs,
(Tab to pin 1, 2, 6
and 7)
A
3.5
Data Sheet
100
-
-
VON = 12 V,
tm = 170 µs,
(Tab to pin 1, 2, 6
and 7)
A
2.5
Thermal hysteresis 1) ∆Tj
140
A
Short circuit shutdown VON(SC)
detection voltage 1)
4.2.9
(Tab to pin 1, 2, 6
and 7)
A
4.2.6
Tj(SC)
170
-
VON = 30 V,
(Tab to pin 1, 2, 6
and 7)
V
1200 µs
VbIN > 10 V typ.
VON > VON(SC),
Tj = -40 … 150 °C
-
°C
-
-
K
-
1)
-
21
10
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Protection Functions
Vbb = 12 V, Tj = +25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
mΩ
VIN = 0,
IL = -10A,
RIS = 1 kΩ,
max.
Reverse Battery
4.2.10 On-State resistance
RON(rev)
in case of reverse
polarity
Vbb=-8V, Tj=25°C1)
Vbb=-8V, Tj=150°C1)
Vbb=-12V, Tj=25°C
Vbb=-12V, Tj=150°C
4.2.11 Integrated resistor in
Vbb line
Rbb
-
9.5
16
9
15
13
22
12
20
-
100
150
(pin 1, 2, 6 and 7
to TAB)
Ω
-
V
Ibb = 15 mA,
Tj = -40 … 150 °C
Over-Voltage
4.2.12 Over-voltage
protection
Input pin
Sense pin
VZ
VZ,IN
VZ,IS
63
67
-
V
56
61
-
V
1)
Not subject to production test, specified by design
2)
Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12.
3)
min. value valid only if input “off-signal” time exceeds 30 µs
Data Sheet
22
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Diagnosis
4.3
Diagnosis
For diagnosis purpose, the BTS 6123B provides an IntelliSense signal at the pin IS.
The pin IS provides during normal operation a sense current, which is proportional to the
load current as long as Vb,IS>5V. The ratio of the output current is defined as kILIS=IL/IIS.
During switch-on no current is provided, until the forward voltage drops below VON<1V
typ. The output sense current is limited to IIS,lim.
The pin IS provides in case of any fault conditions a defined fault current IIS(fault). Fault
conditions are over-current (VON>1V typ.), current limit or over-temperature switch off.
The pin IS provides no current during open load in ON, de-energisation of inductive loads
and inverse current mode.
Vb,IS
Vbb R bb
IIS
VZ,IS
I IS(fault)
IS
VIS
R IS
Sense.emf
Figure 17
Block Diagram: Diagnosis
Table 1
Truth Table
Parameter
Input Current
Level
Output Level
Current Sense IIS
Normal
operation
L1)
H1)
L
H
≈ 0 (IIS(LL))
nominal
Overload
L
H
L
H
≈ 0 (IIS(LL))
Short circuit to GND L
H
L
L
Overtemperature
L
H
L
L
Short circuit to Vbb
L
H
H
H
Open load
L
H
Z1)
H
Data Sheet
23
IIS,fault
≈ 0 (IIS(LL))
IIS,fault
≈ 0 (IIS(LL))
IIS,fault
≈ 0 (IIS(LL))
< nominal2)
≈ 0 (IIS(LL))
≈ 0 (IIS(LH))
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Diagnosis
1)
H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit
2)
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load
current. Please refer to Figure 18 for details. A typical resistor RIS of 1 kΩ is
recommended.
N ,/,6
PD[
W\S
PLQ
, /PLQ
Figure 18
$ ,/
Current sense ratio kILIS1)
Details about timings between the diagnosis signal IIS, the forward voltage drop VON and
the load current IL in ON-state can be found in Figure 19.
Note: During operation at low load current and at activated forward voltage drop
limitation the “two level control” of VON(NL) can cause a sense current ripple
synchronous to the “two level control” of VON(NL). The ripple frequency increases
at reduced load currents.
1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in Section 4.3.1 (Position 4.3.1).
Data Sheet
24
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Diagnosis
IIN
normal operation
VON
VON<1V typ.
IL
I L1
IIS
I IS1
0.9*I IS1
t son(IS)
Figure 19
Data Sheet
I IN
VON>1V typ.
IL2
IIS2
IIS(lim) I IS(fault)
t
VON
t
IL
t
short
VON>VON(SC)
over-temperature
t
I Lx(SC)
IIS
IIS(fault)
t
VON<1V typ.
IL
I IS(fault)
t
IIS(LL)
tslc(IS)
t
tdelay(fault)
t
SwitchOn.emf
Timing of Diagnosis Signal in ON-state
25
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Diagnosis
4.3.1
Electrical Characteristics
Vbb = 12 V, Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
typ.
max.
-
12.5
-
10
10
5
12.5
12.5
12.5
16
16.5
35
Unit
Test Conditions
k
VIN = 0 V,
IIS < IIS,lim
Tj = -40..150 °C
-
-
Load Current Sense
4.3.1
Current sense ratio,
static on-condition
kILIS
IL=35A
IL=10A
IL=1A
IIN = 0 (e.g. during de
disabled
energizing of
inductive loads) 1)
4.3.2
Sense saturation
current 1)
IIS(lim)
2.5
6
10
mA
4.3.3
Sense current under
fault conditions
IIS(fault)
2.5
6
10
mA
4.3.4
Current sense
leakage current
IIS(LL)
–
0.1
0.5
µA
VON < 1 V, typ.
Tj = -40 … 150 °C
VON > 1 V, typ.
Tj = -40 … 150 °C
IIN = 0
4.3.5
Current sense offset
current
IIS(LH)
–
0.1
1
µA
VIN = 0, IL ≤ 0
4.3.6
Minimum load current IL(MIN)
for sense functionality
1
–
–
A
VIN = 0,
Tj = -40 … 150 °C
IL = 0
20 A
Tj = -40 … 150 °C
IL = 10
20 A
Tj = -40 … 150 °C
VON > 1 V, typ.
Tj = -40 … 150 °C
1)
4.3.7
Current sense settling tson(IS)
time to 90% IIS_stat.1)
–
350
700
µs
4.3.8
Current sense settling tslc(IS)
time to 90% IIS_stat.1)
–
50
100
µs
4.3.9
Fault-Sense signal
tdelay(fault)
delay after input
current positive slope
200
650
1200 µs
1)
Not subject to production test, specified by design
Data Sheet
26
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Package Outlines BTS 6123B
5
Package Outlines BTS 6123B
P-TO-220-7-180
(Plastic Dual Small Outline Package)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
27
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Revision History
6
Revision History
Version
Date
Changes
V1.0
05-12-15
initial version of Data Sheet
Data Sheet
28
V1.0, 2005-12-15
Smart High-Side Power Switch
BTS 6123B
Edition 2005-12-15
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 12/16/05.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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Infineon Technologies Components may only be used in life-support devices or systems with the express written
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be endangered.
Data Sheet
29
V1.0, 2005-12-15
http://www.infineon.com
Published by Infineon Technologies AG
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