NXP BST50 Npn darlington transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST50; BST51; BST52
NPN Darlington transistors
Product data sheet
Supersedes data of 2001 Feb 20
2004 Dec 09
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BST50; BST51; BST52
FEATURES
PINNING
• High current (max. 0.5 A)
PIN
• Low voltage (max. 80 V)
1
emitter
• Integrated diode and resistor.
2
collector
3
base
DESCRIPTION
APPLICATIONS
• Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.
2
3
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
MARKING
3
TYPE NUMBER
2
1
sym080
MARKING CODE
BST50
AS1
BST51
AS2
BST52
AS3
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST50
BST51
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
BST52
2004 Dec 09
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BST50
−
60
V
BST51
−
80
V
BST52
−
90
V
BST50
−
45
V
BST51
−
60
V
BST52
−
80
V
−
5
V
collector-emitter voltage
VBE = 0 V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IB
base current (DC)
−
100
mA
Ptot
total power dissipation
−
1.3
W
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
note 1
Rth(j-s)
thermal resistance from junction to soldering point
VALUE
UNIT
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 09
3
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BST50; BST51; BST52
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector-emitter cut-off current
BST50
VBE = 0 V; VCE = 45 V
−
−
50
nA
BST51
VBE = 0 V; VCE = 60 V
−
−
50
nA
BST52
VBE = 0 V; VCE = 80 V
−
−
50
nA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 4 V
−
−
50
nA
hFE
DC current gain
VCE = 10 V; note 1; (see Fig.2)
IC = 150 mA
1 000
−
−
IC = 500 mA
2 000
−
−
IC = 500 mA; IB = 0.5 mA
−
−
1.3
V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C
−
−
1.3
V
VCEsat
collector-emitter saturation
voltage
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 0.5 mA
−
−
1.9
V
fT
transition frequency
IC = 500 mA; VCE = 5 V;
f = 100 MHz
−
200
−
MHz
−
400
−
ns
−
1 500
−
ns
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Dec 09
4
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BST50; BST51; BST52
MGD838
5000
handbook, full pagewidth
hFE
4000
3000
2000
1000
0
10−1
102
10
1
VCE = 10 V.
Fig.2 DC current gain; typical values.
VBB
andbook, full pagewidth
VCC
RB
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = −1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
2004 Dec 09
5
oscilloscope
IC (mA)
103
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BST50; BST51; BST52
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Dec 09
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
6
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BST50; BST51; BST52
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 09
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/05/pp8
Date of release: 2004 Dec 09
Document order number: 9397 750 13877
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