ON NTGS3441PT1G Power mosfet -20 v, -3.16 a, single p-channel tsop-6 Datasheet

NTGS3441P
Power MOSFET
−20 V, −3.16 A, Single P−Channel TSOP−6
Features
•
•
•
•
Ultra Low RDS(on) to Improve Conduction Loss
Low Gate Charge to Improve Switching Losses
TSOP−6 Surface Mount Package
This is a Pb−Free Device
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V(BR)DSS
RDS(ON) TYP
Applications
ID MAX
91 mW @ 4.5 V
• High Side Switch in DC−DC Converters
• Battery Management
−20 V
144 mW @ 2.7 V
188 mW @ 2.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
P−Channel
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
ID
−2.5
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
t = 10 s
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
Steady
State
Power Dissipation
(Note 2)
3
−3.16
PD
4
W
0.98
MARKING
DIAGRAM
1.60
TA = 25°C
ID
TA = 85°C
TA = 25°C
−1.8
A
0.51
W
IDM
−13
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−1.5
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
TSOP−6
CASE 318G
STYLE 1
−1.3
PD
Pulsed Drain Current
1 2 5 6
−1.8
t = 10 s
Continuous Drain
Current (Note 2)
−3.16 A
1
S3 MG
G
1
PT = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0751 in sq)
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS3441PT1G
Package
Shipping †
TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NTGS3441P/D
NTGS3441P
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
128
°C/W
Junction−to−Ambient – t = 10 s (Note 3)
RqJA
78
Junction−to−Ambient – Steady State (Note 4)
RqJA
244
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
mV/ °C
16
IDSS
VGS = 0 V,
VDS = −20 V
TJ = 25°C
−1
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = ±12 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
±100
nA
1.6
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
0.6
3.2
RDS(on)
gFS
mV/°C
VGS = 4.5 V, ID = −3.0 A
91
110
VGS = 2.7 V, ID = −1.5 A
144
165
VGS = 2.5 V, ID = −1.5 A
188
VDS = −15 V, ID =−1.5 A
4.0
S
345
pF
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
40
Total Gate Charge
QG(TOT)
3.25
Threshold Gate Charge
QG(TH)
0.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.4
td(ON)
VGS = 0 V, f = 1 MHz, VDS = −15 V
150
6.0
nC
7.0
12
ns
14
25
13
25
4.0
8.0
TJ = 25°C
0.8
1.2
TJ = 125°C
0.7
VGS = 4.5 V, VDS = −10 V; ID = −3.0 A
0.6
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Tr
VGS = 4.5 V, VDD = −10 V,
ID = −1.5 A, RG = 4.7 W
td(OFF)
Tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −3.0 A
Reverse Recovery Time
tRR
25
Charge Time
Ta
10
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −3.0 A
QRR
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2
ns
15
15
5. Switching characteristics are independent of operating junction temperatures
6. Pulse Test: pulse width = 300 ms, duty cycle = 2%
V
nC
NTGS3441P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
20
20
VDS ≥ −10 V
16
−3.5 V
12
TJ = 25°C
−3 V
8
−2.5 V
4
−2 V
−1.9 V
0
1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
VGS = −10 V to −4.5 V
2
3
5
4
7
6
9
8
8
4
1
2
3
4
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.18
0.12
0.06
2
3
4
6
5
8
7
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.30
TJ = 25°C
0.27
VGS = −2.5 V
0.24
0.21
0.18
0.15
0.12
VGS = −4.5 V
0.09
0.06
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5 9.5
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.5
1000
VGS = 0 V
ID = −1.5 A
VGS = −4.5 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 100°C
12
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
ID = −1.5 A
TJ = 25°C
1.4
TJ = 25°C
0
0.24
1
TJ = −55°C
16
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
−4 V
1.3
1.2
1.1
1
0.9
100
TJ = 125°C
10
TJ = 100°C
0.8
0.7
−50
1
−25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTGS3441P
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
400
Ciss
200
Coss
Crss
0
0
4
8
12
16
5
20
QT
4
16
3
VDS
2
QGS
12
QGD
8
4
ID = −3.0 A
TJ = 25°C
0
0.5
1
1.5
2
3
2.5
0
3.5
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
−IS, SOURCE CURRENT (AMPS)
VDD = −10 V
ID = −1.5 A
VGS = −4.5 V
t, TIME (ns)
VGS
1
0
20
−VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
600
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
tr
td(off)
td(on)
10
tf
1
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
8
6
4
2
0
0.4
100
0.6
0.8
1
1.2
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Gate Threshold Voltage Variation
with Temperature
Figure 10. Diode Forward Voltage vs. Current
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4
NTGS3441P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
L
6
S
1
5
4
2
3
B
MILLIMETERS
DIM MIN
MAX
A
2.90
3.10
B
1.30
1.70
C
0.90
1.10
D
0.25
0.50
G
0.85
1.05
H 0.013 0.100
J
0.10
0.26
K
0.20
0.60
L
1.25
1.55
M
0_
10 _
S
2.50
3.00
D
G
M
J
C
0.05 (0.002)
K
H
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
NTGS3441P
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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