Renesas HAT2142H Silicon n channel power mos fet power switching Datasheet

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Preliminary
HAT2142H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1194-0800
Rev.8.00
Jul 29, 2009
Features
•
•
•
•
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 35 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
12
1, 2, 3
4
5
34
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 1 of 7
Symbol
VDSS
VGSS
ID
Note 1
ID (pulse)
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
100
±20
10
Unit
V
V
A
40
10
10
10
15
150
–55 to +150
A
A
A
mJ
W
°C
°C
HAT2142H
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
Body-drain diode reverse
recovery time
Note:
4. Pulse test
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 2 of 7
trr
Min
100
±20
—
—
2.0
—
—
9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
35
38
15
2000
175
90
32
8.0
7.5
18
11
60
Max
—
—
±10
1
3.5
44
51
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
—
—
—
9
0.82
50
—
1.07
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 5 A, VGS = 10 V Note 4
ID = 5 A, VGS = 7 V Note 4
ID = 5 A, VDS = 10 V Note 4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 10 A
VGS = 10 V, ID = 5 A
VDD ≅ 30 V
RL = 6 Ω
Rg = 4.7 Ω
IF = 10 A, VGS = 0 Note 4
IF = 10 A, VGS = 0
diF/dt = 100 A/µs
HAT2142H
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
100
10
DC
0
50
100
150
Case Temperature
0.01
0.1 0.3
200
µs
3
10
30 100 300 1000
VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
ID (A)
4.5 V
8
1
Drain to Source Voltage
Pulse Test
10 V
ID (A)
s
=
1
pe 0 m
s
ra
tio
n
µs
Operation in
this area is
limited by RDS (on)
0.1
Tc (°C)
10
4.0 V
8
6
3.8 V
4
2
VGS = 3.5 V
Drain Current
6
Drain Current
m
10
0
O
1
Typical Output Characteristics
4
25°C
0
0
2
4
6
Drain to Source Voltage
10
8
VDS (V)
Pulse Test
300
ID = 5 A
100
2A
1A
0
0
4
8
12
Gate to Source Voltage
16
20
VGS (V)
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 3 of 7
1
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
400
0
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Tc = 75°C
2
–25°C
0
VDS (on) (mV)
10
Tc = 25°C
1 shot Pulse
0
Drain to Source Voltage
PW
1
100
Pulse Test
50
VGS = 7 V
10 V
20
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAT2142H
100
Pulse Test
5A
80
ID = 1 A, 2 A
60
VGS = 7 V
1 A, 2 A, 5 A
40
10 V
20
0
–25
0
25
50
75
100 125 150
Case Temperature
Tc
100
Tc = –25°C
30
10
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
30
100
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
0.3
1
3
10
Reverse Drain Current
30
3000
Ciss
1000
300
Coss
100
Crss
30
10
100
VGS = 0
f = 1 MHz
0
10
16
150
12
VDD = 100 V
50 V
25 V
VDS
100
50
VGS
8
4
VDD = 100 V
50 V
25 V
0
0
8
16
Gate Charge
24
32
Qg (nc)
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 4 of 7
40
50
0
40
500
VGS = 10 V, VDD = 30 V
PW = 5 µs
Switching Time t (ns)
200
VGS (V)
20
ID = 10 A
30
Switching Characteristics
Gate to Source Voltage
250
20
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
VDS (V)
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
1
200
100
td(off)
50
tr
td(on)
20
10
5
0.1 0.2
tf
0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
HAT2142H
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IF (A)
10
8
10 V
5V
6
VGS = 0
4
2
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
10
IAP = 10 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
8
6
4
2
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSDF (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 8.33°C/W, Tc = 25°C
0.1
0.05
0.03
D=
PDM
0.02
1
0.0
uls
e
PW
T
PW
T
p
ot
sh
1
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 5 of 7
VDD
HAT2142H
Preliminary
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Switching Time Waveform
Vin
Vout
Vin
10 V
10%
RL
VDS
= 30 V
10%
90%
td(on)
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 6 of 7
10%
tr
90%
td(off)
tf
HAT2142H
Preliminary
Package Dimensions
JEITA Package Code
SC-100
Previous Code
LFPAKV
RENESAS Code
PTZZ0005DA-A
4.9
5.3 Max
4.0 ± 0.2
MASS[Typ.]
0.080g
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
+0.05
0.20 –0.03
0° – 8°
+0.25
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
Unit: mm
0.6 –0.20
1.3 Max
Package Name
LFPAK
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2142H-EL-E
Quantity
2500 pcs
REJ03G1194-0800 Rev.8.00 Jul 29, 2009
Page 7 of 7
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Taping
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and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
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