Hittite HMC311LP3E Ingap hbt gain block mmic amplifier, dc - 6 ghz Datasheet

HMC311LP3 / 311LP3E
v04.1108
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
The HMC311LP3(E) is ideal for:
P1dB Output Power: +15.5 dBm
• Cellular / PCS / 3G
Output IP3: +32 dBm
• Fixed Wireless & WLAN
Gain: 14.5 dB
• CATV & Cable Modem
50 Ohm I/O’s
• Microwave Radio
16 Lead 3x3mm SMT Package: 9mm2
Functional Diagram
General Description
The HMC311LP3(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC
SMT DC to 6 GHz amplifiers. This 3x3mm
QFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifi cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter
Min.
Typ.
13.0
12.5
12.0
14.5
14.3
14.0
Max.
Gain
Gain Variation Over Temperature
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
0.005
0.008
0.012
Return Loss Input / Output
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
13
11
15
dB
dB
dB
DC - 6 GHz
18
dB
15.5
15.0
13.0
dBm
dBm
dBm
Reverse Isolation
13.5
12.0
10.0
dB
dB
dB
0.008
0.012
0.016
dB/ °C
dB/ °C
dB/ °C
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
32
30
28
24
dBm
dBm
dBm
dBm
DC - 6 GHz
4.5
dB
Noise Figure
Supply Current (Icq)
55
74
Note: Data taken with broadband bias tee on device output.
9-8
Units
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC311LP3 / 311LP3E
v04.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Gain & Return Loss
Gain vs. Temperature
9
20
20
15
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
5
-5
14
+25 C
+85 C
-40 C
11
-10
-15
8
-20
5
-25
0
1
2
3
4
5
6
7
8
0
9
1
2
3
Input Return Loss vs. Temperature
6
7
8
0
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
5
Output Return Loss vs. Temperature
0
-10
-15
-20
+25 C
+85 C
-40 C
-5
-10
-15
-20
0
1
2
3
4
5
6
7
8
0
1
2
3
FREQUENCY (GHz)
5
6
7
8
Noise Figure vs. Temperature
10
-5
8
NOISE FIGURE (dB)
0
+25 C
+85 C
-40 C
-10
4
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
REVERSE ISOLATION (dB)
4
FREQUENCY (GHz)
FREQUENCY (GHz)
-15
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
17
10
+25C
+85C
-40C
6
4
2
-20
0
-25
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9-9
HMC311LP3 / 311LP3E
v04.1108
Psat vs. Temperature
20
20
16
16
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
12
8
+25 C
+85 C
-40 C
4
+25 C
+85 C
-40 C
8
0
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
4
5
6
7
8
Power Compression @ 6 GHz
Power Compression @ 1 GHz
20
Pout (dBm), GAIN (dB), PAE (%)
20
15
10
5
0
Pout
Gain
PAE
-5
-10
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
15
10
5
0
Pout
Gain
PAE
-5
-10
-20 -18 -16 -14 -12 -10 -8
8
INPUT POWER (dBm)
+25 C
+85 C
-40 C
14
10
1
2
3
4
5
FREQUENCY (GHz)
-2
0
2
4
6
6
7
8
80
40
35
60
30
25
40
20
15
20
10
5
0
0
4.5
4.75
5
5.25
Vs(V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5.5
Icq (mA)
22
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
26
0
-4
Gain, Power, Output IP3 & Supply Current
vs. Supply Voltage @ 1 GHz
34
18
-6
INPUT POWER (dBm)
Output IP3 vs. Temperature
IP3 (dBm)
3
FREQUENCY (GHz)
30
9 - 10
12
4
0
Pout (dBm), GAIN (dB), PAE (%)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
HMC311LP3 / 311LP3E
v04.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
+7V
RF Input Power (RFIN)(Vs = +5V)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
0.339 W
Thermal Resistance
(junction to ground paddle)
192 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Collector Bias Voltage (Vcc)
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC311LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC311LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
311
XXXX
[2]
311
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 11
HMC311LP3 / 311LP3E
v04.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
Pin Number
Function
Description
1, 2, 4 - 9,
11 - 16
Interface Schematic
N/C
This pin may be connected to RF ground.
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
Recommended Component Values
Frequency (MHz)
Component
9 - 12
50
900
1900
2200
2400
3500
5200
5800
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
3.3 nH
3.3 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC311LP3 / 311LP3E
v04.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Evaluation PCB
J3
Pin Number
Description
1, 2, 3
Vs
4, 5, 6
GND
List of Materials for Evaluation PCB 106789 [1]
Item
Description
J1 - J2
PC Mount SMA Connector
J3
2 mm DC Header
C1, C2
Capacitor, 0402 Pkg.
C3
10,000 pF Capacitor, 0805 Pkg.
R1
22 Ohm Resistor, 0805 Pkg.
L1
Inductor, 0805 Pkg.
U1
HMC311LP3 / HMC311LP3E
PCB [2]
106493 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 13
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