Fairchild FFP30S60STU Stealth ii rectifier Datasheet

STEALTH
II Rectifier
FFP30S60S
tm
Features
30A, 600V STEALTHTM II Rectifier
• High Speed Switching, trr < 40ns @ IF = 30A
The FFP30S60S is STEALTHTM II rectifier with soft recovery
charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
• High Reverse Voltage and High Reliability
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assigments
TO-220-2L
1. Cathode
1. Cathode
2. Anode
2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Parameter
Ratings
600
Units
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
30
A
@ TC = 103oC
300
Operating and Storage Temperature Range
A
o
-65 to +150
C
Thermal Characteristics
Symbol
RθJC
Parameter
Ratings
Maximum Thermal Resistance, Junction to Case
Units
o
1.1
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F30S60S
FFP30S60STU
TO-220-2L
-
-
50
©2007 Fairchild Semiconductor Corporation
FFP30S60S Rev. A
1
www.fairchildsemi.com
FFP30S60S
October 2007
TM
Symbol
Min.
Typ.
Max.
Units
VFM1
IF = 30A
IF = 30A
Parameter
TC = 25oC
TC = 125oC
-
2.1
1.6
2.6
-
V
IRM1
VR = 600V
VR = 600V
TC = 25oC
TC = 125oC
-
-
100
500
µA
trr
IF = 1A, di/dt = 100A/µs, VR = 30V
TC = 25oC
-
25
35
ns
-
28
2.4
0.9
34
40
-
ns
A
-
75
6.3
0.9
236
-
nC
20
-
-
mJ
trr
Irr
S factor
Qrr
IF = 30A, di/dt = 200A/µs, VR = 390V
trr
Irr
S factor
Qrr
IF = 30A, di/dt = 200A/µs, VR = 390V
WAVL
Avalanche Energy ( L = 40mH)
o
TC = 25 C
TC = 125oC
nC
ns
A
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
FFP30S60S Rev. A
2
www.fairchildsemi.com
FFP30S60S
Electrical Characteristics TC = 25oC unless otherwise noted
FFP30S60S
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
1000
200
o
o
TC = 125 C
o
75 C
o
25 C
10
0
1
o
TC = 25 C
0.1
1
2
3
4
Forward Voltage, VF [V]
10
5
Figure 3. Typical Junction Capacitance
Reverse Recovery Time, trr [ns]
280
210
140
70
1
10
Reverse Voltage, VR [V]
600
o
o
TC = 75 C
60
o
TC = 25 C
40
20
100
150
200
di/dt [A/µs]
250
300
Figure 6. Forward Current Derating Curve
70
8
Average Forward Current, IF(AV) [A]
10
o
TC = 125 C
6
o
TC = 75 C
4
o
TC = 25 C
2
FFP30S60S Rev. A
500
TC = 125 C
80
100
Figure 5. Typical Reverse Recovery
Current vs. di/dt
0
100
200
300
400
Reverse Voltage, VR [V]
100
Typical Capacitance
at 0V = 271 pF
0
0.1
100
Figure 4. Typical Reverse Recovery Time
vs. di/dt
350
Capacitances , Cj [pF]
o
TC = 75 C
10
0.01
1
Reverse Recovery Current, Irr [A]
TC = 125 C
100
Reverse Current , IR [µA]
Forward Current, IF [A]
100
150
200
di/dt [A/µs]
250
60
50
40
30
20
10
0
25
300
3
50
75
100
125
o
Case temperature, TC [ C]
150
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FFP30S60S
Mechanical Dimensions
TO-220-2L
Dimensions in Millimeters
FFP30S60S Rev. A
4
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FFP30S60S
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Definition
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Advance Information
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Rev. I31
FFP30S60S Rev. A
5
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