IXYS IXTP05N100 High voltage mosfet Datasheet

High Voltage MOSFET
IXTA 05N100 VDSS
IXTP 05N100 I
D25
RDS(on)
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
750
mA
IDM
TC = 25°C, pulse width limited by TJM
3
A
1.0
A
= 1000 V
= 750 mA
= 17 Ω
Maximum Ratings
TO-220AB (IXTP)
IAR
EAR
TC = 25°C
5
mJ
EAS
TC = 25°C
100
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 47 Ω
PD
TC = 25°C
3
V/ns
40
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
4
g
300
°C
GD
D (TAB)
S
TO-263 AA (IXTA)
G
G = Gate,
S = Source,
S
D (TAB)
D = Drain,
TAB = Drain
Features
y International standard packages
y High voltage, Low RDS (on) HDMOSTM
process
y Rugged polysilicon gate
y Fast switching times
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 25 µA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 375 mA
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
1000
V
2.5
TJ = 25°C
TJ = 125°C
15
4.5
V
±100
nA
25
500
µA
µA
17
Ω
cell structure
Applications
y Switch-mode
and resonant-mode
power supplies
Flyback inverters
y
y DC choppers
y High frequency
matching
Advantages
y Space savings
y High power density
DS98736B(10/04)
IXTA 05N100
IXTP 05N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 500 mA, pulse test
0.5
0.85
S
240
pF
Ciss
Coss
22
pF
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4
pF
td(on)
11
ns
19
ns
40
ns
28
ns
10.5
nC
2.5
nC
5.0
nC
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
td(off)
RG
= 47Ω, (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
Qgd
RthJC
RthCK
3.1
(IXTP)
0.50
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
TO-220 AB Dimensions
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
750
mA
Repetitive; pulse width limited by TJM
3
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2
V
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
710
TO-263 AA Outline
ns
1.
2.
3.
4.
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Gate
Drain
Source
Drain
Bottom Side
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXTA 05N100
IXTP 05N100
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
1.4
0.8
VGS = 10V
0.7
0.6
8V
7V
1.0
I D - Amperes
I D - Amperes
VGS = 10V
1.2
7V
6V
0.5
0.4
5.5V
0.3
0.8
6V
0.6
5.5V
0.4
0.2
5V
0.1
0.2
5V
4.5V
0.0
0.0
0
2
4
6
8
10
12
0
14
5
10
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
25
30
3
VGS = 10V
0.7
2.8
7V
6V
0.5
VGS = 10V
2.6
R D S ( o n ) - Normalized
0.6
I D - Amperes
20
Fig. 4. Norm alized RDS(on) vs.
Junction Te m perature
0.8
5.5V
0.4
0.3
5V
0.2
2.4
2.2
2
I D = 750mA
1.8
1.6
1.4
I D = 375mA
1.2
1
0.8
0.1
0.6
4.5V
0.4
0.0
0
5
10
15
V D S - Volts
20
25
-50
30
2.6
2.4
0
25
50
75
100
125
150
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
0.8
VGS = 10V
-25
TJ - Degrees Centigrade
Fig. 5. Norm alize d RDS(on) vs . ID
TJ = 125ºC
0.7
2.2
0.6
2.0
I D - Amperes
R D S ( o n ) - Normalized
15
V D S - Volts
1.8
1.6
1.4
0.5
0.4
0.3
0.2
1.2
TJ = 25ºC
1.0
0.1
0.0
0.8
0.0
0.2
0.4
0.6
0.8
1.0
I D - Amperes
1.2
1.4
1.6
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTA 05N100
IXTP 05N100
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
1.6
1.0
0.9
1.4
0.8
g f s - Siemens
I D - Amperes
0.7
0.6
0.5
0.4
TJ = 125ºC
0.3
25ºC
-40ºC
1.2
TJ = -40ºC
1.0
25ºC
125ºC
0.8
0.6
0.4
0.2
0.2
0.1
0.0
0.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
0.2
0.4
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0.8
1.0
Fig. 10. Gate Charge
10
2.5
VG S - Volts
2.0
I S - Amperes
0.6
I D - Amperes
1.5
1.0
TJ = 125ºC
9
VDS = 500V
8
I D = 1A
7
I G = 1mA
6
5
4
3
0.5
2
TJ = 25ºC
1
0.0
0
0.4
0.5
0.6
0.7
0.8
0.9
0
V S D - Volts
1
2
3
4
5
6
7
8
9
10
11
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
1000
10.0
C iss
100
R( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MHz
C oss
10
1.0
C rss
1
0.1
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
Pulse Width - milliseconds
1000
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