Kexin BCW72 Npn transistor Datasheet

Transistors
SMD Type
NPN Transistors
BCW71~BCW72
(KCW71~KCW72)
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● Low voltage (45 V)
1
● Low noise.
0.55
● Low current (100 mA)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
■ Features
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
1.1
+0.2
-0.1
● PNP complements: BCW69 and BCW70.
1. Base
0-0.1
+0.1
0.68 -0.1
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Collector - Base Voltage
Parameter
VCBO
50
Collector - Emitter Voltage
VCEO
45
Emitter - Base Voltage
Unit
V
VEBO
5
Collector Current - Continuous
IC
100
Peak Collector Current
ICM
200
Peak Base Current
IBM
200
Collector Power Dissipation
PC
250
mW
Rthja
500
K/W
TJ
150
Tstg
-55 to 150
Thermal Resistance From Junction to Ambient (Note.1)
Junction Temperature
Storage Temperature Range
mA
℃
Note.1:Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
SMD Type
NPN Transistors
BCW71~BCW72
(KCW71~KCW72)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Min
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
50
Collector- emitter breakdown voltage
VCEO
Ic= 2 mA, IB= 0
45
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
5
Collector-base cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
Base - emitter voltage
VBE
DC current gain
BCW71
BCW72
DC current gain
BCW71
uA
IC=10 mA, IB=0.5mA
120
IC=50 mA, IB=2.5mA
210
IC=10 mA, IB=0.5mA
750
IC=50 mA, IB=2.5mA
850
VCE= 5V, IC= 2mA
hFE
VCE= 5V, IC= 2mA
Transition frequency
fT
VCE= 5V, IC= 10mA,f=100MHz
Range
110-220
200-450
Marking
K1*
K2*
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nA
nA
NF
BCW72
100
10
Noise figure
BCW71
V
100
VCB= 10V, IE=Ie= 0,f=1MHz
Type
Unit
VCB= 20 V , IE= 0,TJ=100℃
IC = 200 u A; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
■ Classification of hfe(2)
Max
VEB= 5V , IC=0
Cc
Collector capacitance
Typ
VCB= 20 V , IE= 0
550
250
mV
700
90
VCE= 5V, IC= 10uA
BCW72
2
Test Conditions
150
110
220
200
450
2.5
pF
10
100
dB
MHz
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