ISC BUL45 Silicon npn power transistor Datasheet

Inchange Semiconductor
Product Specification
BUL45
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Fast switching speed
·High voltage
APPLICATIONS
·Designed for use in electronic ballast
and In switchmode power supplies
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
700
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
5
A
ICM
Collector current (peak)
10
A
IB
Base current
2
A
75
W
150
℃
-65~150
℃
MAX
UNIT
1.65
℃/W
Ptot
Tj
Tstg
Total power dissipation
TC=25℃
Max.operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
BUL45
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0;L=25mH
400
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.2 A
0.175
0.25
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4 A
0.25
0.4
V
VBEsat-1
Base-emitter saturation voltage
IC=1A ;IB=0.2 A
0.84
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=0.4 A
0.89
1.25
V
ICEO
Collector cut-off current
VCE =RatedVCEO; IB=0;
100
μA
ICES
Collector cut-off current
VCE =RatedVCES; VEB=0;
TC=125℃
10
100
μA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.3A;VCE=5V
14
hFE-2
DC current gain
IC=2A;VCE=1V
7
14
hFE-3
DC current gain
IC=10mA;VCE=5V
10
22
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
50
fT
Transition frequency
IC=0.5 A ; VCE=10V
12
2
TYP.
MAX
UNIT
V
34
75
pF
MHz
Inchange Semiconductor
Product Specification
BUL45
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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