Infineon BCW68F Pnp silicon af transistor Datasheet

BCW67, BCW68
PNP Silicon AF Transistors
• For general AF applications
2
3
• High current gain
1
• Low collector-emitter saturation voltage
• Complementary types: BCW66... (NPN)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
BCW67A
DAs
1=B
2=E
3=C
SOT23
BCW67B
DBs
1=B
2=E
3=C
SOT23
BCW67C
DCs
1=B
2=E
3=C
SOT23
BCW68F
DFs
1=B
2=E
3=C
SOT23
BCW68G
DGs
1=B
2=E
3=C
SOT23
BCW68H
DHs
1=B
2=E
3=C
SOT23
1Pb-containing
Pin Configuration
Package
package may be available upon special request
1
2007-04-20
BCW67, BCW68
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCW67
32
BCW68
45
Collector-base voltage
Unit
VCBO
BCW67
45
BCW68
60
5
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS ≤ 79°C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
1For
800
1
mA
A
mA
-65 ... 150
Value
≤ 215
Unit
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
2007-04-20
BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BCW67
32
-
-
IC = 10 mA, IB = 0 , BCW68
45
-
-
IC = 10 µA, IE = 0 , BCW67
45
-
-
IC = 10 µA, IE = 0 , BCW68
60
-
-
5
-
-
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 32 V, IE = 0
-
-
0.02
VCB = 45 V, IE = 0
-
-
0.02
VCB = 32 V, IE = 0 , TA = 150 °C; BCW67
-
-
20
VCB = 45 V, IE = 0 , TA = 150 °C; BCW68
-
-
20
-
-
20
Emitter-base cutoff current
I EBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
h FE
IC = 100 µA, VCE = 10 V, hFE-grp.A/F
35
-
-
IC = 100 µA, VCE = 10 V, hFE-grp.B/G
50
-
-
IC = 100 µA, VCE = 10 V, hFE-grp.C/H
80
-
-
IC = 10 mA, VCE = 1 V, hFE-grp.A/F
75
-
-
IC = 10 mA, VCE = 1 V, hFE-grp.B/G
120
-
-
IC = 10 mA, VCE = 1 V, hFE-grp.C/H
180
-
-
IC = 100 mA, V CE = 1 V, h FE-grp.A/F
IC = 100 mA, V CE = 1 V, h FE-grp.B/G
100
160
250
160
250
400
IC = 100 mA, V CE = 1 V, h FE-grp.C/H
250
350
630
IC = 500 mA, V CE = 2 V, h FE-grp.A/F
IC = 500 mA, V CE = 2 V, h FE-grp.B/G
35
-
-
60
-
-
IC = 500 mA, V CE = 2 V, h FE-grp.C/H
100
-
-
3
2007-04-20
BCW67, BCW68
DC Electrical Characteristics
Symbol
Parameter
Values
min.
typ.
Unit
max.
Characteristics
Collector-emitter saturation voltage1)
V
VCEsat
IC = 100 mA, IB = 10 mA
-
-
0.3
IC = 500 mA, IB = 50 mA
-
-
0.7
IC = 100 mA, IB = 10 mA
-
-
1.25
IC = 500 mA, IB = 50 mA
-
-
2
fT
-
200
-
MHz
Ccb
-
6
-
pF
Ceb
-
60
-
Base emitter saturation voltage 1)
VBEsat
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
4
2007-04-20
BCW67, BCW68
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 3
BCW 67/68
5
100 ˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
EHP00403
BCW 67/68
10 3
mA
EHP00402
150 ˚C
25 ˚C
-50 ˚C
ΙC
h FE
25 ˚C
10 2
5
10 2 -50 ˚C
5
10 1
5
10 1
10
5
0
5
10 0
10 -1
5 10 0
5 10 1
5 10 2
10 -1
0
mA 10 3
200
400
600 mV 800
ΙC
VCE sat
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
Base-emitter saturation voltage
IC = ƒ(V BEsat), hFE = 10
10 3
BCW 67/68
EHP00401
10 5
nA
mA
150 ˚C
25 ˚C
-50 ˚C
ΙC
10
2
Ι CB0
BCW 67/68
EHP00400
10 4
5
5
10 3
10
max
5
1
5
10 2
5
typ
0
10
1
10
5
5
10 -1
0
1
2
3
V
10 0
4
VBE sat
0
50
100
˚C
150
TA
5
2007-04-20
BCW67, BCW68
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
BCW 67/68
10 3
EHP00398
65
pF
MHz
5
55
CCB/C EB
fT
50
45
40
35
10 2
30
25
5
20
CEB
15
10
CCB
5
10 1
10 0
5 10 1
5
10 2
0
0
mA 10 3
2
4
6
8
10
12
14
V
16
ΙC
20
VCB/VEB
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
550
mW
BCW 67/68
Ptot max
5
Ptot DC
EHP00399
D=
450
Ptot
400
tp
T
tp
T
BCW66K
BCW66
10 2
350
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
300
250
200
10 1
150
5
100
50
0
0
15
30
45
60
75
90 105 120
°C
TS
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
6
2007-04-20
Package SOT23
BCW67, BCW68
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
7
2007-04-20
BCW67, BCW68
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
8
2007-04-20
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